SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Analog Switching Applications • • Unit: mm Compact package suitable for high-density mounting Low ON-resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 100 Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Note: mA JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2H1B temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 3 3 DP 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3K15FS Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Test Condition Min Typ. Max Unit IGSS VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 0.1 mA, VGS = 0 30 ⎯ ⎯ V IDSS VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.8 ⎯ 1.5 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 25 ⎯ ⎯ mS Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 4 V ⎯ 2.2 4.0 ID = 10 mA, VGS = 2.5 V ⎯ 4.0 7.0 Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 7.8 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 3.6 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 8.8 ⎯ pF VDD = 5 V, ID = 10 mA, VGS = 0~5 V ⎯ 50 ⎯ ⎯ 180 ⎯ Switching time Turn-on time ton Turn-off time toff ns Switching Time Test Circuit (a) Test circuit (b) VIN 5V OUT 5V 90% IN 50 Ω 0 10 μs RL VDD 0V (c) VOUT VDD = 5 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM3K15FS ID – VDS ID – VGS 250 1000 Common Source VDS = 3 V 100 2.7 150 Drain current ID Drain current ID Common Source Ta = 25°C 3 (mA) 4 (mA) 200 10 2.5 100 2.3 50 Ta = 100°C 10 −25°C 25°C 1 0.1 VGS = 2.1 V 0 0 0.5 1 1.5 Drain-Source voltage 0.01 0 2 1 VDS (V) 2 3 Gate-Source voltage RDS (ON) –ID VGS (V) RDS (ON) – VGS 10 6 Common Source Common Source ID = 10 mA 5 8 Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) Ta = 25°C 6 VGS = 2.5 V 4 4V 2 4 Ta = 100°C 3 25°C 2 −25°C 1 0 0 40 80 120 160 0 0 200 2 Drain current ID (mA) 4 Common Source ID = 10 mA Vth (V) 1.8 6 5 VGS = 2.5 V 4 3 4V 2 1 0 −25 8 10 VGS (V) Vth – Ta 2 Gate threshold voltage Drain-Source on resistance RDS (ON) (Ω) 7 6 Gate-Source voltage RDS (ON) – Ta 8 4 1.6 Common Source ID = 0.1 mA VDS = 3 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 0 −25 150 Ambient temperature Ta (°C) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2007-11-01 SSM3K15FS ⎪Yfs⎪ – ID IDR – VDS 1000 250 Drain reverse current IDR (mA) Forward transfer admittance |Yfs| (mS) Common Source 500 V DS = 3 V 300 Ta = 25°C 100 50 30 10 5 3 1 1 10 100 200 Common Source VGS = 0 V Ta = 25°C D 150 S 100 50 0 0 1000 IDR G −0.2 Drain current ID (mA) −0.4 −0.6 Drain-Source voltage t – ID 3000 3000 300 100 ton 500 tf 300 ton 100 tr 50 30 tr 1 10 10 0.1 100 1 10 PD – Ta Drain power dissipation PD (mW) 30 (pF) 250 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 50 10 Ciss Coss 5 3 Crss 1 0.5 0.3 1 Drain-Source voltage 100 Drain current ID (mA) C – VDS 100 Capacitance C (V) 1000 Drain current ID (mA) 0.1 0.1 −1.4 toff tf 500 10 0.1 −1.2 Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 5000 Switching time t (ns) Switching time t (ns) toff 30 VDS 10000 Common Source VDD = 5 V VGS = 0~5 V Ta = 25°C 5000 50 −1 t – ID 10000 1000 −0.8 10 200 150 100 50 0 0 100 VDS (V) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2007-11-01 SSM3K15FS RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01