SSM6N37CTD TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37CTD ○ Power Management Switch Applications Unit: mm Top View Ron = 5.60 Ω (max) (@VGS = 1.5 V) Ron = 4.05 Ω (max) (@VGS = 1.8 V) Ron = 3.02 Ω (max) (@VGS = 2.5 V) Ron = 2.20 Ω (max) (@VGS = 4.5 V) 1.0±0.05 0.15±0.03 6 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1 Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V DC ID 250 Pulse IDP 500 PD (Note 1) 140 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C 5 4 2 3 0.05±0.03 Low ON-resistance 0.6±0.02 • 0.9±0.05 1.5V drive 0.2+±0.03 0.4±0.03 • 0.075±0.03 0.35 0.35 ±0.02 ±0.02 Drain current Drain power dissipation 0.38 +0.02 -0.03 0.7±0.03 mA CST6D 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 2-1S1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight : 1.0 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2 ) Marking Pin Condition (top view) 6 5 Equivalent Circuit (top view) 6 4 SU 5 Q1 1 Polarity mark 2 4 Q2 3 Polarity mark (on the top) 1 2 3 *Electrodes: on the bottom 1 2009-08-11 SSM6N37CTD Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = -10 V 12 ⎯ ⎯ Drain cutoff current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA 0.35 ⎯ 1.0 V 0.14 0.28 ⎯ S ID = 100 mA, VGS = 4.5 V (Note 2) ⎯ 1.65 2.20 ID = 50 mA, VGS = 2.5 V (Note 2) ⎯ 2.16 3.02 ID = 20 mA, VGS = 1.8 V (Note 2) ⎯ 2.66 4.05 ID = 10 mA, VGS = 1.5 V (Note 2) ⎯ 3.07 5.60 ⎯ 12 ⎯ ⎯ 5.5 ⎯ ⎯ 4.1 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth VDS = 3 V, ID = 1 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 100 mA Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching time (Note 2) VDS = 10 V, VGS = 0 V, f = 1 MHz Turn-on time ton VDD = 10 V, ID = 100 mA ⎯ 18 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 50 Ω ⎯ 36 ⎯ ID = -250 mA, VGS = 0 V ⎯ -0.9 -1.2 Drain-source forward voltage VDSF (Note 2) V Ω pF ns V Note 2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) (a) Test Circuit 2.5 V OUT 10 μs RG IN 0 (b) VIN VDD = 10 V RG = 50 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 2.5 V 0V (c) VOUT VDD 90% 10% VDD 90% 10% VDS (ON) tr ton tf toff Precaution Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the SSM6N37CTD). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2009-08-11 SSM6N37CTD (Q1, Q2 Common) ID – VDS ID – VGS 500 1000 (mA) 400 4.5 V 2.5 V 100 ID Ta = 100 °C 300 1.8 V Drain current Drain current ID (mA) 10 V 1.5 V 200 VGS = 1.2 V 100 0 Common Source Ta = 25 °C 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 10 1 − 25 °C 25 °C 0.1 Common Source VDS = 3 V 0.01 0 1.0 1.0 (V) Gate-source voltage RDS (ON) – VGS (V) Common Source Common Source 5 4 25 °C 3 Ta = 100 °C 2 − 25 °C 1 0 4 2 6 Gate-source voltage 8 VGS Ta = 25°C 5 Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) VGS 6 ID =100mA 4 1.5 V 1.8 V 3 2.5V 2 VGS = 4.5Ｖ 1 0 10 0 (V) 100 200 RDS (ON) – Ta ID 3 100m A / 4.5 V 1 0 50 Ambient temperature (mA) VDS = 3 V Vth (V) Gate threshold voltage 50m A / 2.5 V 2 500 Common Source ID = 10m A / VGS = 1.5 V 20m A / 1.8 V 4 400 Vth – Ta 1.0 Common Source 0 −50 300 Drain current 5 Drain-source ON-resistance RDS (ON) (Ω) 3.0 RDS (ON) – ID 6 0 2.0 100 Ta ID = 1 mA 0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2009-08-11 SSM6N37CTD IDR – VDS |Yfs| – ID 1000 1000 (mA) Common Source VDS = 3 V Ta = 25°C IDR 300 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (mS) (Q1, Q2 Common) 100 30 10 100 10 1 Drain current ID 100 25 °C 10 D 1 −25 °C S –0.5 –1.0 Drain-source voltage (mA) C – VDS VDS (ns) Switching time Capacitance C t (pF) 50 Ciss 10 Coss 5 Common Source 3 Crss Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 1 10 Drain-source voltage VDS tf 100 ton 10 tr 1 100 (V) (V) Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 50Ω toff 30 –1.5 t – ID 1000 100 IDR G 0.1 0 1000 Common Source VGS = 0 V Ta =100 °C 1 10 Drain current 100 ID 1000 (mA) PD* – Ta Drain power dissipation PD* (mW) 250 Mounted on FR4 board 2 (10mm × 10mm × 1mm, Cu Pad : 100 mm ) 200 150 100 50 0 -40 -20 *:Total Rating 0 20 40 60 80 Ambient temperature 100 Ta 120 140 160 (°C) 4 2009-08-11 SSM6N37CTD RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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