SSM6N36FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36FE ○ High-Speed Switching Applications Unit: mm • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) 1.6±0.05 : Ron = 1.14 Ω (max) (@VGS = 1.8 V) 1.2±0.05 Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V ID 500 DC Drain current Pulse Drain power dissipation IDP mA 1000 PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C 6 2 5 3 4 0.55±0.05 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1 ES6 JEDEC 0.12±0.05 : Ron = 0.63 Ω (max) (@VGS = 5.0 V) 0.2±0.05 1.6±0.05 : Ron = 0.66 Ω (max) (@VGS = 4.5 V) 1.0±0.05 0.5 0.5 : Ron = 0.85 Ω (max) (@VGS = 2.5 V) 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 ― JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2N1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 3.0 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) Marking 6 Equivalent Circuit (top view) 5 4 6 NX 1 2 5 4 Q1 Q2 3 1 2 1 3 2008-02-26 SSM6N36FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Drain-source breakdown voltage Test Condition Min Typ. Max V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = - 10 V 12 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS =20 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 200 mA (Note2) 420 840 ⎯ mS ID = 200 mA, VGS = 5.0 V (Note2) ⎯ 0.46 0.63 ID = 200 mA, VGS = 4.5 V (Note2) ⎯ 0.51 0.66 ID = 200 mA, VGS = 2.5 V (Note2) ⎯ 0.66 0.85 ID = 100 mA, VGS = 1.8 V (Note2) ⎯ 0.81 1.14 ID = 50 mA, VGS = 1.5 V (Note2) ⎯ 0.95 1.52 ⎯ 46 ⎯ ⎯ 10.8 ⎯ ⎯ 7.3 ⎯ ⎯ 1.23 ⎯ ⎯ 0.60 ⎯ ⎯ 0.63 ⎯ Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain Charge Qgd Switching time VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10V, ID = 0.5 A VGS = 4.0 V Turn-on time ton VDD = 10 V, ID = 200 mA ⎯ 30 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 50 Ω ⎯ 75 ⎯ ID = -0.5 A, VGS = 0 V ⎯ -0.88 -1.2 Drain-source forward voltage VDSF (Note2) Ω pF nC ns V Note2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) (a) Test Circuit 2.5 V OUT 10 μs RG IN 0 (b) VIN VDD = 10 V RG = 50 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 2.5 V 0V (c) VOUT VDD 90% 10% VDD 90% 10% VDS (ON) tr ton tf toff Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM6N36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2008-02-26 SSM6N36FE ID – VDS ID – VGS 10 V 1000 2.5 V 1.8 V (mA) 4.5 V 800 100 ID Ta = 100 °C 600 1.5 V Drain current Drain current ID (mA) 1000 400 VGS = 1.2 V 200 0 Common Source Ta = 25 °C 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 10 1 − 25 °C 25 °C 0.1 Common Source VDS = 3 V 0.01 0 1.0 1.0 (V) Gate-source voltage RDS (ON) – VGS Common Source Common Source Ta = 25°C Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) ID =200 mA 25 °C 1 Ta = 100 °C − 25 °C 0 4 2 6 Gate-source voltage (V) 8 VGS 2 1.8 V 1.5 V 1 VGS = 4.5V 2.5V 0 10 0 (V) 600 400 200 Drain current RDS (ON) – Ta ID 1.0 100 m A / 1.8 V Gate threshold voltage 200 m A / 2.5 V 200 m A / 4.5 V 200 m A / 5.0 V 0.5 0 −50 0 50 Ambient temperature 1000 (mA) 100 Ta Common Source Vth (V) ID = 50 m A / VGS = 1.5 V Common Source 800 Vth – Ta 1.5 Drain-source ON-resistance RDS (ON) (Ω) VGS 3 2 1.0 3.0 RDS (ON) – ID 3 0 2.0 VDS = 3 V ID = 1 mA 0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2008-02-26 |Yfs| – ID 10000 IDR – VDS 1000 Common Source (mA) VDS = 3 V 3000 IDR Ta = 25°C 1000 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (mS) SSM6N36FE 300 100 30 10 100 10 1 Drain current ID 100 25 °C 10 D 1 −25 °C S –0.5 (mA) –1.0 Drain-source voltage C – VDS VDS (ns) tf 10 Coss Crss 5 3 Switching time Capacitance C t (pF) Ciss 30 (V) Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω toff 50 –1.5 t – ID 1000 100 IDR G 0.1 0 1000 Common Source VGS = 0 V Ta =100 °C Common Source 100 ton Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 tr 1 10 Drain-source voltage VDS 10 100 (mW) P D* ID = 0.5 A Ta = 25°C Drain power dissipation Gate-source voltage VGS (V) Common Source 6 VDD = 16 V 4 2 0 0 1 Total Gate Charge 2 Qg 100 ID 1000 (mA) PD* – Ta 10 VDD = 10 V 10 Drain current Dynamic Input Characteristic 8 1 (V) 250 200 150 100 150 0 -40 3 Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm , Cu Pad: 0.135 mm2 × 6) -20 *: Total Rating (nC) 4 0 20 40 60 80 Ambient temperature 100 120 Ta 140 160 (°C) 2008-02-26 SSM6N36FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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