TOSHIBA SSM3K04FE

SSM3K04FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FE
High Speed Switching Applications
Unit: mm
·
With built-in gate-source resistor: RGS = 1 MΩ (typ.)
·
2.5 V gate drive
·
Low gate threshold voltage: Vth = 0.7~1.3 V
·
Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
10
V
DC drain current
ID
100
mA
Drain power dissipation
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2HA1B
Weight: 2.3 mg (typ.)
Marking
Equivalent Circuit
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SSM3K04FE
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = 10 V, VDS = 0
¾
¾
15
mA
V (BR) DSS
ID = 100 mA, VGS = 0
20
¾
¾
V
IDSS
VDS = 20 V, VGS = 0
¾
¾
1
mA
Vth
VDS = 3 V, ID = 0.1 mA
0.7
¾
1.3
V
Forward transfer admittance
ïYfsï
VDS = 3 V, ID = 10 mA
25
50
¾
mS
Drain-source ON resistance
RDS (ON)
ID = 10 mA, VGS = 2.5 V
¾
4
12
W
Gate threshold voltage
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
¾
11.0
¾
pF
Reverse transfer capacitance
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
¾
3.3
¾
pF
Output capacitance
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
¾
9.3
¾
pF
Switching time
Turn-on time
ton
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V
¾
0.16
¾
Turn-off time
toff
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V
¾
0.19
¾
VGS = 0~10 V
0.7
1.0
1.3
Gate-source resistor
RGS
ms
MW
Switching Time Test Circuit
(a)
Test circuit
2
(b)
VIN
VGS
(c)
VOUT
VDS
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SSM3K04FE
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SSM3K04FE
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SSM3K04FE
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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