TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3565 unit：ｍｍ Switching Regulator Applications 10±0.3 φ3.2±0.2 1.1 1.1 Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V (Note 1) ID 5 Pulse (t = 1 ms) (Note 1) IDP 15 PD 45 W Single pulse avalanche energy (Note 2) EAS 595 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C 0.69±0.15 Drain power dissipation (Tc = 25°C) A Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W 2.54±0.25 1. 2. 3. 2.6 1 2 3 0.64±0.15 DC Drain current 2.54±0.25 Gate Drain Source JEDEC ― JEITA ― TOSHIBA ― Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 43.6 mH, IAR = 5.0 A, RG = 25 Ω 4.5±0.2 Symbol 12.5 Min. Maximum Ratings (Ta = 25°C) Characteristics 15.0±0.3 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 2.8Max • • • • 2.7±0.2 2 1 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 2002-12-11 TENTATIVE 2SK3565 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Gate-source breakdown voltage IG =±10 µA, VGS = 0 V VDS = 720 V, VGS = 0 V IDSS Drain-source breakdown voltage Min VGS = ±30 V, VDS = 0 V IGSS V (BR) GSS Drain cut-off current Test Condition Typ. Max Unit ±10 µA ±30 V 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 900 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A 2.0 2.5 Ω Forward transfer admittance Yfs VDS = 20 V, ID = 3 A 2.0 4.5 S Input capacitance Ciss 1150 Reverse transfer capacitance Crss 20 Output capacitance Coss 100 30 70 60 170 28 17 11 Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton tf Turn-off time VOUT RL = 66.7 Ω 4.7 Ω Switching time Fall time ID = 3 A 10 V VGS 0V tr VDD ∼ − 200 V Duty < = 1%, tw = 10 µs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 5 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR 5 A (Note 1) IDRP 15 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V −1.7 V Reverse recovery time trr IDR = 5 A, VGS = 0 V, 900 ns Reverse recovery charge Qrr dIDR/dt = 100 A/µs 5.4 µC 2 2002-12-11 2SK3565 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 3 2002-12-11