2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm l Output Power : Po ≥ 90 W (Min.) l Drain Efficiency : ηD = 50% (Typ.) l Frequency : f = 770 MHz l Push−Pull Structure Package MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V ID 11 A Reverse Drain Current IDR 11 A Drain Power Dissipation PD 250 W Channel Temperature Tch 150 °C Storage Temperature Range Tstg −55~150 °C Drain Current JEDEC EIAJ TOSHIBA Weight: 17.5 g — — 2−22C2A 000707EAA1 · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 2001-01-31 1/4 2SK1739A ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL Output Power Po Drain Efficiency ηD Drain-Source Breakdown Voltage Drain Cut-off Current V (BR) DSS MIN. TYP. MAX. UNIT VDD = 40 V, Iidle = 0.2 A × 2 Pi = 10 W, f = 770 MHz * 90 110 — W — 50 — % ID = 5 mA, VGS = 0 80 — — V VDS = 60 V, VGS = 0 — — 1.0 mA Vth ID = 0.5 mA, VDS = 10 V 0.5 — 3.0 V Drain-Source ON Resistance RDS (on) ID = 2 A, VGS = 10 V ** — 0.5 1.5 Ω Drain-Source ON Voltage VDS (on) ID = 2 A, VGS = 10 V ** — 1.0 3.0 V 0.9 1.3 — S Gate Threshold Voltage IDSS TEST CONDITION Forward Transfer Admittance |Yfs| ID = 1.5 A, VDS = 20 V ** Input Capacitance Ciss VDS = 40 V, VGS = 0, f = 1 MHz — 80 — pF Output Capacitance Coss VDS = 40 V, VGS = 0, f = 1 MHz — 40 — pF Reverse Transfer Capacitance Crss VDS = 40 V, VGS = 0, f = 1 MHz — 1 — pF *: Push−Pull Operation **: Pulse Test This transistor is the electrostatic sensitive device. Please handle with caution. 2001-01-31 2/4 2SK1739A RF OUTPUT POWER TEST FIXTURE 2001-01-31 3/4 2SK1739A CAUTION These are only typical curves and devices are not necessarily guaranteed at these curves. 2001-01-31 4/4