2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance Low leakage current : |Yfs| = 33 S (typ.) : IDSS = 100 µA (max) (VDS = 100 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 100 V Drain−gate voltage (RGS = 20 kΩ) VDGR 100 V Gate−source voltage VGSS ±20 V (Note 1) ID 50 Pulse (Note 1) IDP 200 Drain power dissipation (Tc = 25°C) PD 150 W Channel temperature Tch 150 °C JEDEC ― Storage temperature range Tstg −55~150 °C JEITA ― Drain current DC A TOSHIBA Thermal Characteristics Characteristics 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE 2-16C1B Weight: 4.6 g (typ.) Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 0.833 °C / W Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK1381 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V — — ±50 nA Drain cut−off current IDSS VDS = 100 V, VGS = 0 V — — 100 µA ID = 10 mA, VGS = 0 V 100 — — V V Drain−source breakdown voltage Gate threshold voltage V (BR) DSS Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 VGS = 4 V, ID = 25 A — 31 46 VGS = 10 V, ID = 25 A — 25 32 VDS = 10 V, ID = 25 A 20 33 — — 3700 — — 580 — Drain−source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss — 1500 — tr — 16 — ton — 46 — Rise time Turn−on time VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time mΩ S pF ns Fall time tf — 60 — toff — 185 — Total gate charge (Gate−source plus gate−drain) Qg — 88 — Gate−source charge Qgs — 62 — Gate−drain (“miller”) charge Qgd — 26 — Turn−off time VDD ≈ 80 V, VGS = 10 V, ID = 50 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 50 A Pulse drain reverse current (Note 1) IDRP — — — 200 A Forward voltage (diode) VDSF IDR = 50 A, VGS = 0 V — — −1.6 V Reverse recovery time trr — 280 — ns Reverse recovered charge Qrr IDR = 50 A, VGS = 0 V dIDR / dt = 50 A / µs — 0.56 — µC Marking K1381 ※ Type ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-02 2SK1381 3 2002-09-02 2SK1381 4 2002-09-02 2SK1381 5 2002-09-02 2SK1381 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2002-09-02