TOSHIBA TPC8216-H

TPC8216-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8216-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
•
Small footprint due to a small and thin package
•
High-speed switching
•
Small gate charge: QSW = 3.4 nC (typ.)
•
Low drain-source ON-resistance: RDS (ON) = 13.6 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 19 S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
•
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
30
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
6.4
Pulse
(Note 1)
IDP
25.6
PD (1)
1.5
PD (2)
1.1
PD (1)
0.75
PD 2)
0.45
Single-pulse avalanche energy
(Note 4)
EAS
53
mJ
Avalanche current
IAR
6.4
A
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
EAR
0.13
mJ
Channel temperature
Tch
150
℃
Storage temperature range
Tstg
−55 to 150
℃
Drain current
Single-device
Drain power
operation (Note 3a)
dissipation
Single-device value
(t = 10 s)
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power
operation (Note 3a)
dissipation
Single-device value
(t = 10 s)
(Note 2b) at dual operation
(Note 3b)
A
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1E
Weight: 0.085 g (typ.)
W
Circuit Configuration
W
8
7
6
5
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating” Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8216-H
Thermal Characteristics
Characteristic
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Symbol
Max
Rth (ch-a) (1)
83.3
Rth (ch-a) (2)
114
Rth (ch-a) (1)
167
Rth (ch-a) (2)
278
Unit
°C/W
Marking
TPC8216
H
Part No. (or abbreviation code)
Lot No.
Note: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Note
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.4 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on the lower left of the marking indicates Pin 1.
* Weekly code: (three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(the last digit of the year)
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TPC8216-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯
±100
nA
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
Vth
VDS = 10 V, ID = 0.1 mA
1.3
⎯
2.3
RDS (ON)
VGS = 4.5 V, ID = 3.2 A
⎯
16.5
23.0
RDS (ON)
VGS = 10 V , ID = 3.2 A
⎯
13.6
20.0
Forward transfer admittance
|Yfs|
VDS = 10 V , ID = 3.2 A
9.5
19
⎯
Input capacitance
Ciss
⎯
900
1170
Reverse transfer capacitance
Crss
⎯
65
104
Output capacitance
Coss
⎯
200
⎯
⎯
2.5
3.6
⎯
2.3
⎯
⎯
7.0
⎯
Gate threshold voltage
Drain-source ON-resistance
Gate resistance
Rg
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 5 MHz
tr
VGS
Turn-on time
ton
Turn-off time
Total gate charge
(gate-source plus gate-drain)
(Note 7)
Qgs1
Gate-drain (“Miller”) charge
Qgd
Gate switch charge
QSW
4.7 Ω
mΩ
S
pF
Ω
9.2
⎯
⎯
28
⎯
VDD ≈ 24 V, VGS = 10 V, ID = 6.4 A
⎯
14
⎯
VDD ≈ 24 V, VGS = 5 V, ID = 6.4 A
⎯
7.6
⎯
⎯
2.4
⎯
⎯
2.5
⎯
⎯
3.4
⎯
VDD ≈ 15 V
Duty ≤ 1%, tw = 10 μs
toff
Gate-source charge 1
V
ns
⎯
tf
Qg
出力
0V
Switching time
Fall time
ID = 3.2 A
10 V
RL = 4.7Ω
Drain-source breakdown voltage
VDD ≈ 24 V, VGS = 10 V, ID = 6.4 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
25.6
A
⎯
⎯
−1.2
V
VDSF
IDR = 6.4 A, VGS = 0 V
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TPC8216-H
4 3.6
3.4
6
20
3.2
3.4
Common source
Ta =25°C
Pulse test
15
3.2
ID
3
6
Drain current
Drain current
ID
(A)
8
3.6
10
Common source
Ta = 25°C
Pulse test
3.1
10
ID – VDS
6 5 4 3.8
ID – VDS
(A)
10
2.9
4
2.8
2
10
3
5
2.7
2.8
VGS = 2.6 V
0
0
0.2
0.4
0.6
0.8
Drain-source voltage
VDS
VGS = 2.6 V
0
0
1
0.4
(V)
4
Ta = −55°C
2
1
2
3
Gate-source voltage
4
VGS
0.2
5
ID = 6.4 A
0.1
3.2
1.6
0
0
2
(V)
4
Drain-source ON-resistance
RDS (ON) (mΩ)
Forward transfer admittance
Ta = −55°C
25
100
1
1
Drain current
10
ID
8
VGS
10
(V)
RDS (ON) – ID
100
Common source
VDS = 10 V
Pulse test
|Yfs|
(S)
⎪Yfs⎪ – ID
0.1
0.1
6
Gate-source voltage
100
10
(V)
Common source
Ta = 25℃
Pulse test
(V)
VDS
Drain-source voltage
ID
Drain current
6
100
2
VDS – VGS
Common source
VDS = 10 V
Pulse test
0
0
VDS
0.3
(A)
8
1.6
Drain-source voltage
ID – VGS
10
1.2
0.8
Common source
Ta = 25°C
Pulse test
VGS = 4.5 V
1
0.1
100
(A)
10
10
1
Drain current
4
10
ID
100
(A)
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TPC8216-H
RDS (ON) – Ta
IDR – VDS
30
100
Common source
Ta = 25°C
Pulse test
25
ID = 1.6,3.2,6.4 A
Drain reverse current
IDR (A)
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
Pulse test
20
VGS = 4.5 V
15
10
ID = 1.6,3.2,6.4 A
VGS = 10 V
4.5
3
1
10
VGS = 0 V
10
1
5
0
−80
−40
0
40
80
Ambient temperature
120
Ta
0.1
0
160
−0.2
(°C)
−0.4
−0.6
−0.8
Drain-source voltage
Capacitance – VDS
−1.0
VDS
(V)
80
120
−1.2
Vth – Ta
10000
3
Gate threshold voltage
Vth (V)
Ciss
Crss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
100
10
Drain-source voltage
VDS
1
Common source
0.5 V
DS = 10 V
ID = 0.1 mA
Pulse test
0
−80
−40
0
(V)
Ambient temperature
1.2
(2)
0.8
(V)
40
(3)
(4)
0.4
0
0
50
100
Ambient temperature
150
Ta
20
Common source
ID = 6.4 A
Ta = 25°C
Pulse test
VDS
(1)
(°C)
50
Device mounted on a Glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
t=10s
Drain-source voltage
Drain power dissipation
PD (W)
1.6
Ta
160
Dynamic input/output
characteristics
PD – Ta
2
40
30
12
VGS
VDS = 24 V
6
20
12
10
VDD = 24 V
5
4
6
0
2
4
6
8
Total Gate charge
(°C)
8
12
0
200
16
10
Qg
12
14
(V)
100
1.5
VGS
Capacitance
Coss
2
Gate-source voltage
1000
C
(pF)
2.5
0
16
(nC)
2009-02-23
TPC8216-H
rth – tw
Transient thermal impedance
rth (°C/W)
1000
Single - pulse
(4)
(3)
(2)
(1)
100
10
Device mounted on a glass-epoxy board (a) (note 2a)
(1)Single-device opration (Note 3a)
(2)Single-device value at dual opration (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device opration (Note 3a)
(4)Single-device value at dual opration (Note 3b)
t = 10s
1
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
100
Single-device value at dual opration
(note 3b)
t =1ms *
10
10ms *
Drain current
ID
(A)
ID max (Pulse) *
1
0.1
* Single pulse Ta=25℃
0.01
0.1
Curves must be derated
linearly with increase in
temperature.
1
Drain-source voltage
VDSS max
10
VDS
100
(V)
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TPC8216-H
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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