TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit: mm Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 0.05 M A 5 8 0.475 1 4 B 0.65 2.9±0.1 0.8±0.05 (Q1, Q2 Common) 0.025 S Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±8 V Drain current DC (Note 1) ID −3.8 Pulse (Note 1) IDP −15.2 PD (1) 1.48 PD (2) 1.23 Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) A W PD (1) 0.58 PD (2) 0.36 EAS 18.8 mJ Avalanche current IAR −3.8 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.04 mJ Single-pulse avalanche energy (Note 4) 0.05 M B A Absolute Maximum Ratings (Ta = 25°C) Characteristic 2.8±0.1 Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.3 to −1.0 V (VDS = −10 V, ID = −1 mA) 2.4±0.1 • • • • 0.33±0.05 S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 1.12 +0.13 -0.12 1. Source1 2. Gate1 3. Source2 4. Gate2 5. Drain2 6. Drain2 7. Drain1 8. Drain1 JEDEC ⎯ JEITA ⎯ TOSHIBA 0.28 +0.1 -0.11 2-3V1G Weight: 0.017 g (typ.) Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Circuit Configuration 8 7 6 Marking (Note 6) 8 5 7 6 5 8303 1 2 3 4 1 2 3 4 Lot No. 1 2010-01-14 TPCP8303 Thermal Characteristics Characteristic Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 84.5 Rth (ch-a) (2) 101.6 Rth (ch-a) (1) 215.5 Rth (ch-a) (2) 347.2 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is applied to both devices evenly.). Note 4: VDD = −16 V, Tch = 25°C (initial), L = 1 mH, RG = 1 Ω, IAR = −3.8 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: ● on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2010-01-14 TPCP8303 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Symbol IGSS Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Test Condition VGS = ±8 V, VDS = 0 V Min Typ. Max Unit ⎯ ⎯ ±1 μA μA IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 8 V −12 ⎯ ⎯ Vth VDS = −10 V, ID = −1 mA −0.3 ⎯ −1.0 RDS (ON) VGS = −1.5 V, ID = −0.3 A ⎯ 85 144 RDS (ON) VGS = −1.8 V, ID = −1.0 A ⎯ 66 90 RDS (ON) VGS = −2.5 V, ID = −1.9 A ⎯ 52 60 RDS (ON) VGS = −4.5 V, ID = −1.9 A ⎯ 41 46 Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.9 A 6 12 ⎯ Input capacitance Ciss ⎯ 640 ⎯ ⎯ 100 ⎯ ⎯ 140 ⎯ ⎯ 12 ⎯ ⎯ 20 ⎯ ⎯ 43 ⎯ ⎯ 138 ⎯ ⎯ 10 ⎯ ⎯ 1.6 ⎯ ⎯ 2.1 ⎯ Crss Output capacitance Coss Rise time Turn-on time tr VDS = −10 V, VGS = 0 V, f = 1 MHz VGS −5V ton 4.7 Ω Switching time Fall time ID = −1.9 A 0V RL = 5.3 Ω Reverse transfer capacitance tf V V mΩ S pF OUT ns VDD ≈ −10 V Turn-off time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge1 Qgs1 Gate-drain (“Miller”) charge Qgd Duty ≤ 1%, tw = 10 μs VDD ≈ −16 V, VGS = −5 V, ID = −3.8 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −15.2 A ⎯ ⎯ 1.2 V VDSF IDR = −3.8 A, VGS = 0 V 3 2010-01-14 TPCP8303 ID – VDS −8 ID – VDS −3 −10 −2.2 −20 −2 −1.8 −16 −2.5 −6 ID −4 −6 −1.6 −4 Common source Ta = 25°C Pulse test −10 −3 −2.5 −4 −2.2 −6 (A) Common source Ta = 25°C Pulse test Drain current Drain current ID (A) −10 −1.4 −2 −2 −12 −1.8 −8 −1.6 −4 −1.4 VGS = −1.2 V VGS = −1.2V 0 −0.2 0 −0.4 −0.6 Drain−source voltage −0.8 VDS 0 −1.0 −0.4 0 (V) −0.8 Drain-source voltage ID – VGS −10 VDS (V) (A) Drain−source voltage ID Drain current VDS −2.0 (V) VDS – VGS −6 −4 100 25 −2 −1.6 −0.5 Common source VDS = −10 V Pulse test −8 −1.2 Ta = −55°C Common source Ta = 25°C Pulse test −0.4 −0.3 −0.2 −0.1 ID = −1.9 A −1 −0.3 0 −0.4 0 −0.8 −1.2 Gate−source voltage −1.6 VGS 0 −2.0 −2 0 (V) |Yfs| – ID Drain−source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) Ta = −55°C 100 25 1 0.1 −0.1 −1 Drain current VGS −8 (V) RDS (ON) – ID 1000 10 −6 Gate−source voltage 100 Common source VDS = −10 V Pulse test −4 −10 ID Common source Ta = 25°C Pulse test 100 −2.5 −4.5 10 −0.1 −100 (A) −1 Drain current 4 −1.8 VGS = −1.5 V −10 ID −100 (A) 2010-01-14 TPCP8303 RDS (ON) – Ta IDR – VDS −100 120 (A) IDR ID = −0.3 A −1.9, −3.8 −1 VGS = −1.5 V 60 −1.8 −2.5 40 ID = −0.38, −1.9, −3.8, −7.6 A −4.5 20 0 −80 −40 0 40 80 Ambient temperature 120 Ta −10 −1 VGS = 0 V −1 Common source Ta = 25°C Pulse test −0.1 160 −0.2 0 −0.4 −0.6 Drain−source voltage (°C) Capacitance – VDS Vth (V) Gate threshold voltage Capacitance Ciss Coss Crss 10 −0.1 −1 −10 Drain−source voltage VDS −0.2 (2) 1 0.5 −40 40 80 120 Ambient temperature 40 Ta 160 (°C) Dynamic input/output characteristics −20 160 Ta (°C) VDS −16 VGS −4 −6 VDD = −16 V −4 −8 Common source ID = −3.8 A −2 Ta = 25°C Pulse test −4 0 4 8 Total gate charge 5 −8 −8 −12 0 200 −10 VGS VDS (V) (3) 0 0 Ambient temperature (4) 0 120 Common source VDS = −10 V ID = −1mA Pulse test (V) Drain−source voltage (1) 80 −0.4 0 −80 −100 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t=5s (W) PD Drain power dissipation 1.5 (V) −0.6 PD – Ta 2 VDS −1.2 Vth – Ta 1000 100 −1.0 −0.8 Common source Ta = 25°C VGS = 0 V f = 1 MHz C (pF) 10000 −0.8 (V) 80 −1.8 −1.5 −2.5 −4.5 12 Qg 16 20 Gate−source voltage 100 Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 0 (nC) 2010-01-14 TPCP8303 rth − tw Transient thermal impedance rth (°C/W) 1000 (4) (3) Single pulse (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area ID max (Pulse) * t = 1 ms * −10 Drain current ID (A) −100 10 ms * −1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1 Drain−source voltage VDSS max −10 VDS −100 (V) 6 2010-01-14 TPCP8303 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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