TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCP8005-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • High-speed switching • Small gate charge: QSW = 5.0 nC (typ.) 0.05 M A 5 8 0.475 1 4 2.8±0.1 Small footprint due to a small and thin package 0.33±0.05 2.4±0.1 • Unit: mm B 0.05 M B 0.65 • Low drain-source ON-resistance: RDS (ON) = 9.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.) 2.9±0.1 A 0.8±0.05 • Low leakage current: IDSS = 10 μA (max) (VDS = 30V) • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) 0.025 S S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 Absolute Maximum Ratings (Ta = 25°C) Characteristic 1.12 +0.13 -0.12 0.28 +0.1 -0.11 Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 11 Pulsed (Note 1) IDP 44 PD 1.68 W Weight: 0.017 g (typ.) PD 0.84 W Circuit Configuration EAS 78.7 mJ IAR 11 A EAR 0.137 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) A 1. Source 5. Drain 2. Source 6. Drain 3. Source 7. Drain 4. Gate 8. Drain JEDEC ― JEITA ― TOSHIBA Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) 2-3V1K 8 7 6 5 1 2 3 4 Marking (Note 5) 8 7 6 5 may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 8005H ※ This transistor is an electrostatic-sensitive device. Handle with care. 1 2 3 4 Lot No. 1 2007-12-25 TPCP8005-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Max Unit Rth (ch-a) 74.4 °C/W Rth (ch-a) 148.8 °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 11A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-12-25 TPCP8005-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ± 20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.5 ⎯ 2.5 VGS = 4.5 V, ID = 5.5 A ⎯ 12.1 15.7 VGS = 10 V, ID = 5.5 A ⎯ 9.8 12.9 VDS = 10 V, ID = 5.5 A 15 30 ⎯ ⎯ 1433 2150 ⎯ 83 125 ⎯ 303 ⎯ ⎯ 1.0 1.5 ⎯ 3.0 ⎯ ⎯ 10 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance Rg VDS = 10 V, VGS = 0 V, f = 5 MHz tr VGS Turn-on time ton Fall time toff Total gate charge (gate-source plus gate-drain) Qg 4.0 ⎯ VDD ∼ − 15 V < Duty = 1%, tw = 10 μs ⎯ 22 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 11 A ⎯ 20 ⎯ Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW VDD ∼ − 24 V, VGS = 5 V, ID = 11 A VDD ∼ − 24 V, VGS = 10 V, ID = 11 A V mΩ S pF Ω ns ⎯ tf Turn-off time 0V 4.7 Ω Switching time ID = 5.5 A VOUT 10 V RL = 2.7 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V ⎯ 11 ⎯ ⎯ 4.8 ⎯ ⎯ 3.0 ⎯ ⎯ 5.0 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 44 A ⎯ ⎯ −1.2 V VDSF IDR = 11 A, VGS = 0 V 3 2007-12-25 TPCP8005-H 8 6 5 4 10 3.3 4 8 65 4.5 10 Common source Ta = 25°C Pulse test 3.2 ID 3 Drain current ID (A) 5 Drain current ID – VDS 4.5 (A) 10 3.1 2 1 4 ID – VDS 3.4 3.5 8 Common source Ta = 25°C Pulse test 6 3.3 4 3.2 2 VGS = 2.9V VGS = 3.0V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 0 1 (V) 0.4 0.8 Drain-source voltage ID – VGS VDS (A) Drain-source voltage ID Drain current 8 100 Ta = −55°C 25 0 0 1 2 3 Gate-source voltage 4 VGS 0.15 ID = 11 A 0.1 5.5 0.05 2.8 0 0 5 (V) 6 8 VGS 10 (V) RDS (ON) – ID Drain-source ON-resistance RDS (ON) (mΩ) (S) 4 100 Common source VDS = 10 V Pulse test 100 Ta = −55°C 10 25 100 1 0.1 0.1 2 Gate-source voltage ⎪Yfs⎪ – ID |Yfs| (V) Common source Ta = 25℃ Pulse test (V) Common source VDS = 10 V Pulse test 4 Forward transfer admittance VDS 2 0.2 12 1000 1.6 VDS – VGS 20 16 1.2 1 Drain current 10 ID 4.5 10 VGS = 10 V Common source Ta = 25 ℃ Pulse test 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2007-12-25 TPCP8005-H RDS (ON) – Ta IDR – VDS 100 (A) Common source Pulse test ID = 11A 10 IDR 20 Drain reverse current 2.8A,5.5A 15 VGS = 4.5 V ID = 2.8A,5.5A,11A 10 VGS = 10 V 5 −80 −40 0 40 Ambient temperature 80 120 Ta 4.5 3 10 1 1 0 160 −0.2 (°C) −0.4 Capacitance – VDS Vth (V) Gate threshold voltage (V) Coss 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 80 120 1.5 1 Common source VDS = 10 V 0.5 I = 1 mA D Pulse test 0 −80 100 VDS 2 −40 (V) (V) (2)Device mounted on a glass-epoxy VDS board(b) (Note 2b) t = 10s Drain-source voltage 1.2 (2) 0.8 0.4 40 80 Ambient temperature (°C) 50 board(a) (Note 2a) (1) Ta 160 Dynamic input/output characteristics (1)Device mounted on a glass-epoxy 1.6 40 Ambient temperature PD – Ta 2 0 120 Ta 16 30 12 V 20 5 8 24 V 10 4 5 10 15 Total gate charge (°C) 12 VDD = 6 V VDS 0 0 160 20 Common source ID = 11 A 40 Ta = 25°C Pulse test (V) 1 2.5 VGS Capacitance C (pF) 1000 (W) VDS −1 Vth – Ta Ciss Drain-source voltage PD −0.8 3 10 0.1 Drain power dissipation −0.6 Drain-source voltage 10000 0 0 VGS = 0 V Common source Ta = 25°C Pulse test 20 Qg 25 30 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) 25 0 (nC) 2007-12-25 TPCP8005-H rth – tw 1000 Transient thermal impedance (°C/W) rth (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 100 (1) 10 1 0.1 0.01 0.0001 Single - pulse 0.001 0.01 0.1 1 Pulse width tw 10 100 1000 (s) Safe operating area 100 ID max (Pulse) * Drain current ID (A) 1000 t =1ms * 10 1 t =10ms * * Single – pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 1 Drain-source voltage 10 VDS 100 (V) 6 2007-12-25 TPCP8005-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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