MT4S07 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S07 VHF~UHF Band Low Noise Amplifier Applications · Low Noise Figure: NF = 1.5dB · High Gain: |S21e|2 = 9.5dB Unit: mm (VCE = 3 V, IC = 5 mA, f = 2 GHz) (VCE = 3 V, IC = 15 mA, f = 2 GHz) Maximum Ratings (Ta = 25°C) 項 目 記 号 定 格 単位 Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collector current IC 25 mA Base current IB 10 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Tstg -55~125 °C Storage temperature range Marking JEDEC ― JEITA ― TOSHIBA 2-3J1C Weight: 0.012 g (typ.) 2 1 Type name A D 3 4 1 2002-01-23 MT4S07 Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Symbol Min Typ. Max Unit VCE = 3 V, IC = 10 mA 10 12 ¾ GHz VCE = 1 V, IC = 5 mA, f = 2 GHz ¾ 8 ¾ |S21e| (2) VCE = 3 V, IC = 15 mA, f = 2 GHz 7.5 10.5 ¾ NF(1) VCE = 1 V, IC = 5 mA, f = 2 GHz ¾ 1.6 3 NF(2) VCE = 3 V, IC = 5 mA, f = 2 GHz ¾ 1.5 3 Min Typ. Max Unit fT 2 Insertion gain Noise figure |S21e| (1) 2 Test Condition dB dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = 5 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ¾ ¾ 1 mA DC current gain hFE VCE = 1 V, IC = 5 mA 70 ¾ 140 ¾ Reverse transfer capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz ¾ 0.4 0.85 pF (Note) Note: Cre is measured by 3 terminal method with capacitance bridge. Caution This device electrostatic sensitivity. Please handle with caution 2 2002-01-23 MT4S07 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 2002-01-23