TOSHIBA MT4S07

MT4S07
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S07
VHF~UHF Band Low Noise Amplifier Applications
·
Low Noise Figure: NF = 1.5dB
·
High Gain: |S21e|2 = 9.5dB
Unit: mm
(VCE = 3 V, IC = 5 mA, f = 2 GHz)
(VCE = 3 V, IC = 15 mA, f = 2 GHz)
Maximum Ratings (Ta = 25°C)
項
目
記 号
定
格
単位
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
25
mA
Base current
IB
10
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Tstg
-55~125
°C
Storage temperature range
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
2
1
Type name
A D
3
4
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MT4S07
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Symbol
Min
Typ.
Max
Unit
VCE = 3 V, IC = 10 mA
10
12
¾
GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
¾
8
¾
|S21e| (2)
VCE = 3 V, IC = 15 mA, f = 2 GHz
7.5
10.5
¾
NF(1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
¾
1.6
3
NF(2)
VCE = 3 V, IC = 5 mA, f = 2 GHz
¾
1.5
3
Min
Typ.
Max
Unit
fT
2
Insertion gain
Noise figure
|S21e| (1)
2
Test Condition
dB
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
¾
¾
0.1
mA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
¾
¾
1
mA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
¾
140
¾
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
¾
0.4
0.85
pF
(Note)
Note: Cre is measured by 3 terminal method with capacitance bridge.
Caution
This device electrostatic sensitivity. Please handle with caution
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MT4S07
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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