VISHAY 6N137

6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
High Speed Optocoupler, 10 Mbd
Features
• Choice of CMR performance of 10 kV/µs, 5 kV/µs,
and 100 V/µs
• High speed: 10 Mbd typical
• + 5 V CMOS compatibility
• Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range
• Pure tin leads
• Meets IEC60068-2-42 (SO2) and
IEC60068-2-43 (H2S) requirements
• Low input current capability: 5 mA
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CUL - File No. E52744, equivalent to CSA bulletin
5A
• DIN EN 60747-5-2 (VDE0884)
• Reinforced insulation rating
per IEC60950 2.10.5.1
• VDE available with Option 1
Dual channel
Single channel
NC
A
1
2
7
C
3
6
NC
4
5
8
VCC
VE
VO
GND
A1 1
8
C1
C2
2
7
3
6
A2
4
5
VCC
VO1
VO2
GND
SFH6755T, SFH6756T, SFH6757T
SFH6745T, SFH6746T, SFH6747T
18921-3
sistor output, providing less leakage compared to an
open collector Schottky clamped transistor output.
For the single channel type, an enable function on pin
7 allows the detector to be strobed. The internal shield
provides a guaranteed common mode transient
immunity of 5 kV/µs for the SFH6741 and SFH6751
and 10 kV/µs for the SFH6742 and SFH6752. The
use of a 0.1 µF bypass capacitor connected between
pin 5 and 8 is recommended.
Order Information
Part
Remarks
6N137
100 V/µs, Single channel, DIP-8
6N137-X006
100 V/µs, Single channel, DIP-8 400 mil
(option 6)
6N137-X007
100 V/µs, Single channel, SMD-8 (option 7)
SFH6741
5 kV/µs, Single channel, DIP-8
SFH6741-X006
5 kV/µs, Single channel, DIP-8 400 mil (option
6)
SFH6741-X007
5 kV/µs, Single channel, SMD-8 (option 7)
SFH6742
10 kV/µs, Single channel, DIP-8
SFH6742-X006
10 kV/µs, Single channel, DIP-8 400 mil
(option 6)
SFH6742-X007
10 kV/µs, Single channel, SMD-8 (option 7)
SFH6750
100 V/µs, Dual channel, DIP-8
SFH6750-X006
100 V/µs, Dual channel, DIP-8 400 mil (option
6)
Description
SFH6750-X007
100 V/µs, Dual channel, SMD-8 (option 7)
The 6N137, SFH674x and SFH675x are single channel 10 Mbd optocouplers utilizing a high efficient input
LED coupled with an integrated optical photodiode IC
detector. The detector has an open drain NMOS-tran-
SFH6751
5 kV/µs, Dual channel, DIP-8
Applications
Microprocessor System Interface
PLC, ATE input/output isolation
Computer peripheral interface
Digital Fieldbus Isolation: CC-Link, DeviceNet,
Profibus, SDS
High speed A/D and D/A conversion
AC Plasma Display Panel Level Shifting
Multiplexed Data Transmission
Digital control power supply
Ground loop elimination
Document Number 82584
Rev. 1.8, 13-Aug-04
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Part
Remarks
SFH6751-X006
5 kV/µs, Dual channel, DIP-8 400 mil (option
6)
SFH6751-X007
5 kV/µs, Dual channel, SMD-8 (option 7)
SFH6752
SFH6752-X006
SFH6752-X007
Truth Table (Positive Logic)
LED
ENABLE
ON
H
OUTPUT
L
10 kV/µs, Dual channel, DIP-8
OFF
H
H
10 kV/µs, Dual channel, DIP-8 400 mil (option
6)
ON
L
H
OFF
L
H
10 kV/µs, Dual channel, SMD-8 (option 7)
ON
NC
L
OFF
NC
H
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Unit
Average forward current1)
Parameter
IF
20
mA
2)
Average forward current
IF
15
mA
Reverse input voltage
VR
5
V
1)
VE
VCC + 0.5 V
V
Enable input voltage
Test condition
IE
5
mA
IFSM
200
mA
Symbol
Value
Unit
VCC
7
V
Output current
IO
50
mA
Output voltage
VO
7
V
Pdiss
85
mW
Pdiss
60
mW
Enable input
current1)
t = 100 µs
Surge current
1)
Package: Single DIP-8
2)
Package: Dual DIP-8
Output
Parameter
Supply voltage
Test condition
1 minute max.
Output power dissipation
1)
Output power dissipation per channel2)
1)
Package: Single DIP-8
2)
Package: Dual DIP-8
Coupler
Symbol
Value
Unit
Storage temperature
Parameter
Test condition
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 40 to + 100
°C
for 10 sec.
260
°C
Solder reflow temperature
for 1 minute
260
°C
Isolation test voltage
t = 1.0 sec.
5300
VRMS
Lead solder temperature1)
2)
1)
Package: DIP-8 through hole
2)
Package: DIP-8 SMD
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VISO
Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Recommended Operating Conditions
Parameter
Test condition
Operating temperature
Supply voltage
Symbol
Min
Max
Unit
Tamb
- 40
Typ.
100
°C
Vcc
4.5
5.5
V
Input current low level
IFL
0
250
µA
Input current high level
IFH
5
15
mA
Logic high enable voltage
VEH
2.0
VCC
V
Logic low enable voltage
VEL
0.0
0.8
V
Output pull up resistor
RL
330
4K
Ω
5
-
Fanout
RL = 1 kΩ
N
Electrical Characteristics
Tamb = 25 °C and Vcc = 5.5 V, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Symbol
Min
Typ.
Max
Input forward voltage
Parameter
IF = 10 mA
Test condition
VF
1.1
1.4
1.7
Unit
Reverse current
VR = 4.5 V
IR
1
µA
Input capacitance
f = 1 MHz, VF = 0 V
CI
55
pF
Test condition
Symbol
V
Output
Parameter
Typ.
Max
Unit
ICCH
4.1
7.0
mA
VE = VCC, IF = 0 mA
ICCH
3.3
6.0
mA
IF = 0 mA
ICCH
8.2
14.0
mA
VE = 0.5 V, IF = 10 mA
ICCL
4.0
7.0
mA
VE = VCC, IF = 10 mA
ICCL
3.3
6.0
mA
VE = 2.0 V, VO = 5.5 V, IF = 250 µA
IOH
0.002
1
µA
VE = 2.0 V, IF = 5 mA,
IOL (sinking) = 13 mA
VOL
0.2
0.6
V
Input threshold
current
VE = 2.0 V, VO = 5.5 V,
IOL (sinking) = 13 mA
ITH
2.4
5.0
mA
High level enable
current
VE = 2.0 V
IEH
- 0.6
- 1.6
mA
Low level enable
current
VE = 0.5 V
IEL
- 0.8
- 1.6
mA
High level supply
current (single
channel)
VE = 0.5 V, IF = 0 mA
High level supply
current (dual
channel)
Low level supply
current
High level output
current
Low level output
voltage
High level enable
voltage
VEH
Low level enable
voltage
VEL
Document Number 82584
Rev. 1.8, 13-Aug-04
Min
2.0
V
0.8
V
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Switching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified.
All Typicals at Ta = 25 °C, VCC = 5 V.
Parameter
Test condition
Propagation delay time to high
output level
RL = 350 Ω, CL = 15 pF
Propagation delay time to low
output level
RL = 350 Ω, CL = 15 pF
Symbol
Min
Typ.
Max
Unit
tPLH
20
48
75*
ns
100
ns
25
50
75*
ns
100
ns
tPLH
tPHL
tPHL
Pulse width distortion
RL = 350 Ω, CL = 15 pF
| tPHL - tPLH |
2.9
35
ns
Propagation delay skew
RL = 350 Ω, CL = 15 pF
tPSK
8
40
ns
Output rise time (10 - 90 %)
RL = 350 Ω, CL = 15 pF
tr
23
ns
Output fall time (90 - 10 %)
RL = 350 Ω, CL = 15 pF
tf
7
ns
Propagation delay time of
enable from VEH to VEL
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tELH
12
ns
Propagation delay time of
enable from VEL to VEH
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tEHL
11
ns
*
75ns applies to the 6N137 only, a JEDEC registered specification
VCC
5V
Single Channel
Pulse Gen.
Zo = 50 Ω
t f = t r = 5 ns
1
IF
2
Input IF
Monitoring
Node
RM
3
4
VCC 8
VE
7
VOUT
6
GND
5
RL
0.1 µF
Bypass
IF = 7.5 mA
IF = 3.75 mA
0 mA
Input IF
Output VO
Monitoring
Node
VOL
1.5 V
VOH
Output VO
C L = 15 pF
tPLH
The Probe and Jig Capacitances are included in CL
tPHL
18964-1
Figure 1. Single Channel Test Circuit for tPLH, tPHL, tr and tf
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Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Pulse Gen.
Zo = 50 Ω
t f = t r = 5 ns
+5V
Dual Channel
IF
Input
Monitoring
Node
RM
1
VCC 8
2
7
3
6
4
5
GND
RL
0.1 µF
Bypass
Output VO
Monitoring
Node
CL= 15 pF
18963-1
Figure 2. Dual Channel Test Circuit for tPLH, tPHL, tr and tf
Input VE
Monitoring Node
Pulse Gen.
Zo = 50 Ω
t f = t r = 5 ns
1
7.5 mA
IF
VCC
5V
Single Channel
2
3
4
VCC 8
VE
7
VOUT
6
GND
RL
0.1 µF
Bypass
Output VO
Monitoring
Node
Input VE
C L = 15 pF
Output VO
3V
1.5 V
tEHL
tELH
1.5 V
5
The Probe and Jig Capacitances are included in CL
18975-1
Figure 3. Single Channel Test Circuit for tEHL and tELH
Document Number 82584
Rev. 1.8, 13-Aug-04
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Common Mode Transient Immunity
Parameter
Test condition
|VCM| = 10 V, VCC = 5 V, IF = 0 mA,
Common mode
transient immunity
(high)
Symbol
Min
| CMH |
100
Typ.
Max
Unit
| CMH |
5000
10000
V/µs
| CMH |
10000
15000
V/µs
| CML |
100
| CML |
5000
10000
V/µs
| CML |
10000
15000
V/µs
V/µs
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 1)
|VCM| = 50 V, VCC = 5 V, IF = 0 mA,
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 2)
|VCM| = 1 kV, VCC = 5 V, IF = 0 mA,
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 3)
|VCM| = 10 V, VCC = 5 V, IF = 7.5 mA,
V/µs
VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 1)
|VCM| = 50 V, VCC = 5 V, IF = 7.5 mA,
VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C
2)
|VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA,
VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25
1)
For 6N137 and SFH6750
2)
For SFH6741 and SFH6751
3)
For SFH6742 and SFH6752
VCC
IF
°C 3)
5V
Single Channel
1
B
A
VFF
2
3
4
VCC 8
VE
7
VOUT
6
GND
5
VCM
+
Pulse Generator
ZO = 50 Ω
RL
0.1 µF
Bypass
Output VO
Monitoring
Node
VCM (PEAK)
VCM 0 V
Switch AT A: IF = 0 mA
VO 5 V
VO(min.)
Switch AT A: IF = 7.5 mA
VO(max.)
VO 0.5 V
CMH
CML
18976-1
Figure 4. Single Channel Test Circuit for Common Mode Transient Immunity
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Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
IF
Dual Channel
B
+5V
VCC 8
1
A
VFF
2
7
3
6
4
GND
RL
Output VO
Monitoring
Node
0.1 µF
Bypass
5
VCM
+
Pulse Generator
ZO = 50 Ω
18977
Figure 5. Dual Channel Test Circuit for Common Mode Transient Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter
Test condition
Symbol
Min
Climatic Classification (according to
IEC 68 part 1)
Typ.
Max
Unit
55/110/21
Comparative Tracking Index
CTI
175
VIOTM
8000
VIORM
630
399
V
V
PSI
500
mW
ISI
300
mA
TSI
175
°C
Creepage
standard DIP-8
7
mm
Clearance
standard DIP-8
7
mm
Creepage
400mil DIP-8
8
mm
Clearance
400mil DIP-8
8
mm
Insulation thickness, reinforced rated
per IEC60950 2.10.5.1
0.2
mm
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.60
IF = 50 mA
1.6
1.55
V F – Forward Voltage ( V )
V F – Forward Voltage ( V )
1.7
IF = 20 mA
1.5
1.4
1.3
1.2
IF = 10 mA
IF = 1 mA
1.1
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.0
–40 –20
17610
1.10
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 6. Forward Voltage vs. Ambient Temperature
Document Number 82584
Rev. 1.8, 13-Aug-04
0
17611
5
10 15 20 25 30 35 40 45 50
IF – Forward Current ( mA )
Figure 7. Forward Voltage vs. Forward Current
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
7
4
3
2
1
0
–40
17613-1
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( C )
VCC = 7 V
IF = 10 mA
VCC = 5 V
IF = 10 mA
2.0
1.5
1.0
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( C )
High Level Supply Current ( mA )
CCh–
I
RL = 1 k
2.1
–40
–20
0
20
40
60
80 100
Tamb – Ambient Temperature ( C )
2.5
2.4
RL = 350
2.3
2.2
RL = 4 k
2.1
RL = 1 k
2.0
–40
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( C )
17617
Figure 12. Input Threshold OFF Current vs. Ambient Temperature
0.30
3.5
VCC = 7 V
IF = 0.25 mA
3.4
3.3
VCC = 5 V
IF = 0.25 mA
3.2
3.1
3.0
2.9
–20
0
20
40
60
80 100
Tamb – Ambient Temperature ( C )
Figure 10. High Level Supply Current vs. Ambient Temperature
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8
2.2
th
0.5
Figure 9. Low Level Supply Current vs. Ambient Temperature
17615
RL = 4 k
2.3
– Input Threshold OFF Current ( A )
3.0
2.8
–40
2.4
Figure 11. Input Threshold ON Current vs. Ambient Temperature
Vol – Low Level Output Voltage ( V )
– Low Level Supply Current ( mA )
CCl
I
3.5
17614
RL = 350
2.5
2.6
4.0
0.0
–40
2.6
17616
Figure 8. Reverse Current vs. Ambient Temperature
2.5
2.7
I
I R – Reverse Current ( nA )
5
I th – Input Threshold ON Current ( A )
2.8
6
0.25
VCC = 5.5 V
IF = 5 mA
IL = 16 mA
IL = 13 mA
0.20
0.15
IL = 10 mA
0.10
IL = 6 mA
0.05
0.00
–40
17618
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( C )
Figure 13. Low Level Output Voltage vs. Ambient Temperature
Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
120
t P – Propagation Delay time ( ns )
I ol – Low Level Output Current ( mA )
60
IF = 5 mA
IF = 10 mA
50
40
30
20
10
0
–40 –20
0
20
40
60
80
40
tPHL, 350 Ω
tPHL, 1 kΩ
20
tPHL, 4 kΩ
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 17. Propagation Delay vs. Ambient Temperature
120
t P – Propagation Delay time ( ns )
45
40
35
30
25
20
15
10
5
0
–40
tPLH, 4 kΩ
100
80
tPLH, 350 Ω
tPLH, 1 kΩ
60
40
tPHL, 350 Ω
20
tPHL, 1 kΩ
tPHL, 4 kΩ
0
–20
0
20
40
60
80
5
100
Tamb – Ambient Temperature ( C )
17620
17623
7
9
11
13
IF – Forward Current ( mA )
15
Figure 18. Propagation Delay vs. Forward Current
Figure 15. High Level Output Current vs. Ambient Temperature
5.5
50
PWD – Pulse Width Distortion ( ns )
5.0
Vo – Output Voltage ( V )
tPLH, 350 Ω
60
0
–40 –20
50
4.5
4.0
3.5
3.0
2.5
2.0
RL = 350 W
1.5
RL = 1 kW
1.0
RL = 4 kW
0.5
0.0
0
17621
tPLH, 1 kΩ
17622
Figure 14. Low Level Output Current vs. Ambient Temperature
I oh – High Level Output Current ( nA )
80
100
Tamb – Ambient Temperature ( _C )
17619
tPLH, 4 kΩ
100
1
2
3
4
Figure 16. Output Voltage vs. Forward Input Current
Document Number 82584
Rev. 1.8, 13-Aug-04
17624
RL = 4 kΩ
30
20
RL = 1 kΩ
10
0
–40
5
IF – Forward Input Current ( mA )
40
RL = 350 Ω
–20
0
20
40
60
80 100
Tamb – Ambient Temperature ( °C )
Figure 19. Pulse Width Distortion vs. Ambient Temperature
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
60
50
t e – Enable Propagation Delay ( ns )
PWD – Pulse Width Distortion ( ns )
60
RL = 4 kΩ
40
30
RL = 1 kΩ
20
10
RL = 350 Ω
0
5
7
9
11
13
IF – Forward Current ( mA )
17625
15
17628
Figure 20. Pulse Width Distortion vs. Forward Current
50
teLH = 4 kΩ
40
30
20
teLH = 1 kΩ
teLH = 350 Ω
teHL = 350 Ω
10
teHL = 1 kΩ
0
–40
teHL = 4 kΩ
–20
0
20
40
60
80 100
Tamb – Ambient Temperature ( °C )
Figure 23. Enable Propagation Delay vs. Ambient Temperature
300
t r,f – Rise and Fall Time ( ns )
tr, RL = 4 kΩ
17626
250
200
150
tf, RL = 350 Ω
tf, RL = 1 kΩ
tf, RL = 4 kΩ
100
tr, RL = 1 kΩ
50
tr, RL = 350 Ω
0
–40 –20
0
20
40
60
80 100
Tamb – Ambient Temperature ( °C )
Figure 21. Rise and Fall Time vs. Ambient Temperature
300
t r,f – Rise and Fall Time ( ns )
tr, RL = 4 kΩ
250
200
150
tf, RL = 350 Ω
tf, RL = 1 kΩ
tf, RL = 4 kΩ
100
tr, RL = 1 kΩ
50
tr, RL = 350 Ω
0
5
7
9
11
13
15
IF – Forward Current ( mA )
17627
Figure 22. Rise and Fall Time vs. Forward Current
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Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
3
2
1
5
6
7
8
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.300 (7.62)
typ.
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
i178006
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
Document Number 82584
Rev. 1.8, 13-Aug-04
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
12
Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Document Number 82584
Rev. 1.8, 13-Aug-04
www.vishay.com
13
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