VISHAY SFH6343T

VISHAY
SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Transistor Output
Features
• Surface Mountable
• Industry Standard SOIC-8 Footprint
• Compatible with Infrared Vapor Phase Reflow and
Wave Soldering Processes
• Isolation Test Voltage, 3000 VRMS
• Very High Common Mode Transient Immunity:
15000 V/ µs at V CM = 1500 V Guaranteed
(SFH6343)
• High Speed: 1.0 Mb/s
• TTL Compatible
• Guaranteed AC and DC Performance Temperature: 0 °C to 70 °C
• Open Collector Output
• Pin Compatible with Agilent(HP) Optocouplers
- SFH6315T-HCPL0500
- SFH6316T-HCPL0501
- SFH6343T-HCPL0453
Agency Approvals
• UL - File No. E52744 System Code Y
• CSA 93751
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Line Receivers
Logic Ground Isolation
Analog Signal Ground Isolation
Replace Pulse Transformers
SFH6315/6
8 VCC
NC 1
A 2
7 BVB
C 3
6 C
NC 4
5 E
SFH6343
NC 1
8 VCC
A 2
7 NC
C 3
6 C
NC 4
5 E
i179069
photo detector and a high speed transistor. The photo
detector is junction isolated from the transistor to
reduce miller capacitance effects. The open collector
output function allows circuit designers to adjust the
load conditions when interfacing with different logic
systems such as TTL, CMOS, etc.
Because the SFH6343T has a Faraday shield on the
detector chip, it can also reject and minimize high
input to output common mode transient voltages.
There is no base connection, further reducing the
potential electrical noise entering the package.
The SFH6315T/ SFH6316T/ SFH6343T are packaged in industry standard SOIC-8 packages and are
suitable for surface mounting.
Order Information
Part
Remarks
SFH6315T
CTR > 5.0 %, SOIC-8
SFH6316T
CTR > 15 %, SOIC-8
SFH6343T
CTR > 19 %, SOIC-8
For additional order information see Option Section
Description
Note that product is available only on tape and reel.
The SFH6315T/ SFH6316T/ SFH6343T, high speed
optocouplers, each consists of a GaAlAs infrared
emitting diode, optically coupled with an integrated
Document Number 83677
Rev. 1.3, 20-Nov-03
www.vishay.com
1
SFH6315T/ SFH6316T/ SFH6343T
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
3.0
Unit
V
DC forward current
IF
25
mA
Surge forward current
tp ≤ 1.0 µs, 300 pulses/s
IFSM
1.0
A
Power dissipation
Tamb ≤ 70 °C
Pdiss
45
mW
Output
Symbol
Value
Unit
Supply voltage
Parameter
Test condition
VS
- 0.5 to 30
V
Output voltage
VO
- 0.5 to 25
V
Output current
Power dissipation
Tamb ≤ 70 °C
IO
8.0
mA
Pdiss
100
mW
Symbol
Value
Unit
VISO
3000
VRMS
Coupler
Parameter
Test condition
Isolation test voltage between
emitter and detector (refer to
climate DIN 40046, part 2,
Nov.74)
Pollution degree (DIN VDE
0110)
2
Creepage
≥ 4.0
mm
Clearance
≥ 4.0
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
175
VIO = 500 V, Tamb = 25 °C, RISOL
(Note 2)
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C,
RISOL (Note 2)
RIO
≥ 1011
Ω
Storage temperature range
Tstg
-55 to +150
°C
Ambient temperature range
Tamb
-55 to +100
°C
Tj
100
°C
260
°C
Isolation resistance
Junction temperature
Soldering temperature
www.vishay.com
2
t = 10 s max., Dip soldering:
distance to seating plane
≥1.5 mm
Document Number 83677
Rev. 1.3, 20-Nov-03
SFH6315T/ SFH6316T/ SFH6343T
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Over recommend temperature (Tamb = 0 °C to 70 °C) unless otherwise specified. See note 6. All typical values at Tamb = 25 °.
Parameter
Test condition
IF = 16 mA
Input forward voltage
Input reverse current
VR = 3.0 V
Input capacitance
f = 1.0 MHz, VF = 0 V
Temperature coefficient of
forward voltage
IF = 16 mA
Symbol
Typ.
Max
Unit
VF
Min
1.6
1.8
V
VF
1.6
1.9
V
10
µA
IR
0.5
CIN
75
pF
∆VF/∆Tamb
-1.7
mV/°C
Output
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
µA
Logic low supply
current
IF = 16 mA, VO = Open, VCC = 15 V
ICCL
200
Logic high supply
current
IF = 0 mA, VO = Open, VCC = 15 V
ICCH
0.001
1.0
µA
Logic low output
voltage
IF = 16 mA, VCC = 4.5 V, IO = 1.1 mA
Logic high output
current
ICCH
0.001
2.0
µA
SFH6315T
VOL
0.15
0.4
V
IF = 16 mA, VCC= 4.5 V, IO = 0.8 mA,
SFH6315T
VOL
0.15
0.5
V
IF = 16 mA, VCC = 4.5 V, IO = 3.0 mA
SFH6316T
VOL
0.15
0.4
V
IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA,
SFH6343T
VOL
0.15
0.5
V
IF = 0 mA, VO = VCC = 5.5 V
IOH
0.003
0.5
µA
IF = 0 mA, VO = VCC = 15 V
IOH
0.01
1.0
µA
50
µA
IOH
Coupler
Parameter
Test condition
Capacitance (input-output).See note 6.
f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
0.4
CI-O
pF
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
SFH6315T
CTR
7
16
50
%
VO = 0.5 V, IF = 16 mA, VCC = 4.5 V
SFH6315T
CTR
5
17
VO = 0.4 V, IF = 16 mA, VCC = 4.5 V
SFH6316T
CTR
19
35
VO = 0.5 V, IF = 16 mA, VCC = 4.5 V
SFH6343T
CTR
15
36
Current transfer ratio VO = 0.4 V, IF = 16 mA, VCC = 4.5 V
See notes 1 and 6
Document Number 83677
Rev. 1.3, 20-Nov-03
%
50
%
%
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3
SFH6315T/ SFH6316T/ SFH6343T
VISHAY
Vishay Semiconductors
10% Duty Cycle
1/f<100 µs
Pulse
Generator
ZO = 50 Ω
tr = 5 ns
IF
1
8
2
7
+5 V
IF = Monitor
4
6
5
0
5V
VO
RL
3
IF
VO
0.1 µF
C L=15pF
Rm
1.5 V
1.5 V
VOL
tPLH
tPHL
isfh6315t_01
Figure 1. Test circuit for switching times
Switching Characteristics
Over recommended temperature (Tamb = 0°C), VCC = 5.0 V, IF = 16 mA unless otherwise specified. All typical values, Tamb = 25 °C
Parameter
Propagation delay time to logic low at output
Part
Symbol
RL = 4.1 KΩ
Test condition
SFH6315T
tPHL
Min
Typ.
Max
Unit
0.5
1.5
µs
SFH6315T
tPHL
0.5
2.0
µs
RL = 1.9 KΩ
SFH6316T
tPHL
0.25
0.8
µs
See fig. 1and notes 4 and 5
Propagation delay time to logic high at output
SFH6343T
tPHL
0.25
1.0
µs
RL = 4.1 KΩ
SFH6315T
tPLH
0.5
1.5
µs
SFH6315T
tPLH
0.5
2.0
µs
RL=1.9 KΩ
SFH6316T
tPLH
0.5
0.8
µs
RL = 1.9 KΩ
SFH6343T
tPLH
0.5
1.0
µs
See fig. 1and notes 4 and 5
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4
Document Number 83677
Rev. 1.3, 20-Nov-03
SFH6315T/ SFH6316T/ SFH6343T
VISHAY
Vishay Semiconductors
Common Mode Transient Immunity
Parameter
Test condition
Common mode transient
immunity at logic high level
output
Part
Symbol
RL = 4.1 KΩ, IF = 0 mA,
VCM = 10 VP-P
SFH6315T
|CMH|
Min
Typ.
1.0
Max
KV/µs
Unit
RL = 1.9 KΩ, IF = 0 mA,
VCM = 1500 VP-P
SFH6316T
|CMH|
1.0
KV/µs
SFH6343T
|CMH|
30
KV/µs
RL = 4.1 KΩ, IF = 16 mA,
VCM = 10 VP-P
SFH6315T
|CML|
1.0
KV/µs
RL = 1.9 K Ω, IF = 16 mA,
VCM = 10 VP-P
SFH6316T
|CML|
1.0
KV/µs
RL = 1.9 K Ω, IF = 16 mA,
VCM = 1500 VP-P
SFH6343T
|CML|
30
KV/µs
See fig. 2 and notes 3,4 and 5
Common mode transient
immunity at logic low level
output
15
See fig. 2 and notes 3,4 and 5
15
1. Current transfer ratio in percent equals the ratio of output collector current (IO) to the forward LED input current (IF) times 100
2. Device considered a two-terminal device: pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together.
3. Common mode transient immunity in a Logic High level is the maximum tolerable (positive) dVCM/dt on the leading edge of the common
mode pulse (VCM) to assure that the output will remain in a Logic High state (i.e., VO > 2.0 V). Common mode transient immunity in a Logic
Low level the maximum tolerable (negative) dVCM/dt on the trailing edge of the common mode pulse signal (VCM to assure that the output
will remain in Logic Low state, i.e., VO > 0.8 V).
4. The 1.9 kΩ load represents 1 TTL unit load of 1.6 mA and the 5.6 kΩ pull-up resistor.
5. The 4.1 kΩ load represents 1 LSTTL unit load of 0.36 mA and the 6.1 kΩ pull-up resistor.
6. A 0.1 µf bypass capacitor connected between pins 5 and 8 is recommended.
+5 V
8
1
VCM
IF
A
2
7
3
6
4
5
90%
RL
10%
tr
tf
VO
0.1 µF
B
VCC
+
isfh6315t_02
90%
0 V 10%
VCM
–
Pulse Generator
VO
Switch at A: IF = 0 mA
VO
Switch at B: IF = 16 mA
5V
VOL
Figure 2. Test circuit for transient immunity and typical waveforms
Document Number 83677
Rev. 1.3, 20-Nov-03
www.vishay.com
5
SFH6315T/ SFH6316T/ SFH6343T
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
8
15
25 °C
75 °C
10
0 °C
5
0
1.3
1.4
1.5
1.6
@ VO = 0.4 V, VCC = 5.0 IF = 20mA
7
Output Current, Io (mA)
IF - LED Current in mA
20
IF = 16mA
6
IF = 10mA
5
4
IF = 2mA
3
2
IF = 1mA
1
1.7
VF - LED forward Voltage
0
-60
isfh6315t_03
-40
-20
0
20
40
60
Temperature, Ta (°C)
80
100
isfh6315t_07
Figure 3. LED Forward Current vs.Forward Voltage
Figure 6. Output Current vs. Temperature
900
20
10
0
0
20
40
60
80
100
tp - Propagation Delay Time - ns
IF LED Current in ma
30
SFH6316T and SFH6343T
@ VCC = 5.0 V
TpLH @ 3 V
IF = 16 mA, RL = 1.9 kΩ
800
700
600
TpLH @ 1.5 V
500
400
300
TpHL @ 1.5 V
200
TpHL @ 3 V
100
Ambient Temperature in °C
0
-60
-40
-20
isfh6315t_04
0
20
40
60
Temperature, Ta (°C)
80
100
isfh6315t_08
Figure 4. Permissible Forward LED Current vs. Temperature
Figure 7. Propagation Delay vs. Temperature-SFH6316T and
SFH6343T
1400
100
Detector
80
60
40
Emitter
20
0
0
20
40
60
80
Ambient Temperature in °C
100
isfh6315t_05
Figure 5. Permissible Power Dissipation vs. Temperature
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6
tp - Propagation Delay Time - ns
Total Power in mW
120
1200
SFH6315T @ VCC = 5.0 V,
IF = 16 mA, RL = 4.1 kΩ
1000
800
TpLH
600
400
TpHL
200
0
-60
-40
-20
0
20
40
60
Temperature, Ta (°C)
80
100
isfh6315t_09
Figure 8. Propagation Delay vs. Temperature-SFH6315T
Document Number 83677
Rev. 1.3, 20-Nov-03
SFH6315T/ SFH6316T/ SFH6343T
VISHAY
Vishay Semiconductors
0.6
10
VCC = VO = 15 V
1
VCC = VO = 5 V
0.1
0.01
∆i
ˇ F/∆iO / Small Signal Current
Transfer Ratio
IOH - Collector Current, IC (nA)
100
(VCC = 5.0 V, RL = 100 Ω)
0.5
0.4
0.3
0.2
0.1
0.001
0
-60
-40
-20
0
20
40
60
Temperature, TA (°C)
80
100
0
5
10
15
20
25
IF / mA
isfh6315t_10
isfh6315t_11
Figure 9. Logic High Output Current vs.Temperature
Figure 10. Small Signal Current Transfer Ratio vs. Quiescent Input
Current
Package Dimensions in Inches (mm)
R .010(.25)
.120± .005
(3.05± .13)
.240
(6.10)
.154± .005
CL
(3.91± .13)
.050 (1.27)
.036 (.91)
.266 (6.76)
.356 (9.04)
.016 (.41)
Pin One ID
.192± .005
(4.88± .13)
.004 (.10)
.008 (.20)
ISO Method A
.014 (.36)
.015± .002
(.38± .05)
.008 (.20)
.050 (1.27)
typ.
.021 (.53)
.020± .004
(.51± .10)
2 plcs.
40°
5° max.
R.010
(.25) max.
.045 (1.14)
7°
.058± .005
(1.49± .13)
.125± .005
(3.18± .13)
Lead
Coplanarity
±.0015 (.04) max.
i178003
Document Number 83677
Rev. 1.3, 20-Nov-03
www.vishay.com
7
SFH6315T/ SFH6316T/ SFH6343T
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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8
Document Number 83677
Rev. 1.3, 20-Nov-03