BOURNS TISP3135H3

TISP3070H3SL THRU TISP3115H3SL,
TISP3125H3SL THRU TISP3210H3SL,
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3xxxH3SL Overvoltage Protector Series
TISP3xxxH3SL Overview
This TISP® device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP3xxxH3SL protects R-G and T-G. In addition, the device is rated for simultaneous R-G and T-G impulse conditions. The TISP3xxxH3SL is
available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These protectors have
been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T
K.20, K.21 and K.45. The TISP3350H3SL meets the FCC Part 68 “B” ringer voltage requirement and survives both Type A and B impulse tests.
These devices are housed in a through-hole 3-pin single-in-line (SL) plastic package.
Summary Electrical Characteristics
VDRM
V(BO)
VT @ IT
V
V
V
TISP3070H3
58
70
3
TISP3080H3
65
80
3
TISP3095H3
75
95
3
TISP3115H3
90
115
3
TISP3125H3
100
125
3
TISP3135H3
110
135
3
TISP3145H3
120
145
3
TISP3180H3
145
180
3
TISP3210H3
160
210
3
TISP3250H3
190
250
3
TISP3290H3
220
290
3
TISP3350H3
275
350
3
† Bourns part has an improved protection voltage
Part #
IDRM
µA
5
5
5
5
5
5
5
5
5
5
5
5
I(BO)
mA
600
600
600
600
600
600
600
600
600
600
600
600
IT
A
5
5
5
5
5
5
5
5
5
5
5
5
IH
mA
150
150
150
150
150
150
150
150
150
150
150
150
Co @ -2 V
pF
140
140
140
74
74
74
74
74
74
62
62
62
Functionally
Replaces
P1402AC†
P1602AC†
ITSM
A
1 cycle 60 Hz
60
di/dt
A/µs
2/10 Wavefront
400
P2202AC†
P2702AC†
P3002AC
P3602AC†
P4202AC
P4802AC†
P6002AC
Summary Current Ratings
ITSP
A
Parameter
Waveshape
Value
96
2/10
500
1.2/50, 8/20
300
10/160
250
5/320
200
10/560
130
10/1000
100
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
TISP3xxxH3SL Overvoltage Protector Series
ITU-T K.20/21 Rating . . . . . . . . 8 kV 10/700, 200 A 5/310
SL Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Device
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
VDRM
V(BO)
V
58
65
75
90
100
110
120
145
160
190
220
275
V
70
80
95
115
125
135
145
180
210
250
290
350
Standard
2/10 µs
8/20 µs
10/160 µs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
10/700 µs
10/560 µs
10/1000 µs
1
G
2
R
3
MDXXAGA
Device Symbol
T
R
SD3XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
Waveshape
T
ITSP
A
500
300
250
3-Pin Through-Hole Packaging
- Compatible with TO-220AB pin-out
- Low Height ................................................................... 8.3mm
Low Differential Capacitance ...................................... < 67 pF
200
.............................................. UL Recognized Component
160
100
Description
The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.
The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping
until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes
the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as
the diverted current subsides.
How To Order
Device
Package
Carrier
Order As
TISP3xxxH3
SL (Single-in-Line)
Tube
TISP3xxxH3SL
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
This TISP3xxxH3SL range consists of twelve voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in
a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in
SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A 10/1000 TISP3xxxF3SL series is
available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover
control and are virtually transparent to the system in normal operation.
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
97
TISP3xxxH3SL Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, (see Note 1)
Symbol
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
VDRM
ITSP
Value
± 58
± 65
± 75
±90
±100
±110
±120
±145
±160
±190
±220
±275
500
300
250
220
200
200
200
200
160
100
Unit
V
A
ITSM
55
60
1
A
diT/dt
TJ
Tstg
400
-40 to +150
-65 to +150
A/µs
°C
°C
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP3xxxH3SL must be in thermal equilibrium.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T
terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G
terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the
TISP3xxxH3SL returns to its initial conditions.
4. See Figure 10 for impulse current ratings at other temperatures. Above 85 °C, derate linearly to zero at 150 °C lead
temperature.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for
simultaneous operation. In this condition, the G terminal current will be 2xITSM(t), the sum of the R and T terminal currents. Derate
current values at -0.61 %/°C for ambient temperatures above 25 °C.
98
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
TISP3xxxH3SL Overvoltage Protector Series
Electrical Characteristics for the R and G or T and G Terminals, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak offstate current
VD = VDRM
V(BO)
Breakover voltage
dv/dt = ±750 V/ms,
V(BO)
Impulse breakover
voltage
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Test Conditions
RSOURCE = 300 Ω
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = - /+30 mA/ms
Off-state capacitance
VD = ±50 V
f = 100 kHz, Vd = 1 V rms, VD = 0,
f = 100 kHz, Vd = 1 V rms, VD = -2 V
f = 100 kHz, Vd = 1 V rms, VD = -50 V
f = 100 kHz, Vd = 1 V rms, VD = -100 V
(see Note 6)
NOTE
±0.15
±0.15
Linear voltage ramp, Maximum ramp value < 0.85VDRM
f = 100 kHz, Vd = 1 V rms, VD = -1 V
Coff
Min
TA = 25 °C
TA = 85 °C
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
TA = 85 °C
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3125 thru ‘3210
‘3250 thru ‘3350
Typ
Max
±5
±10
±70
±80
±95
±115
±125
±135
±145
±180
±210
±250
±290
±350
±78
±88
±103
±124
±134
±144
±154
±189
±220
±261
±302
±362
±0.6
±3
±0.6
±5
Unit
µA
V
V
A
V
A
kV/µs
±10
170
90
84
150
79
67
140
74
62
73
35
28
33
26
µA
pF
6: To avoid possible voltage clipping, the ‘3125 is tested with VD = -98 V.
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
99
TISP3xxxH3SL Overvoltage Protector Series
Electrical Characteristics for the R and T Terminals, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak offstate current
Test Conditions
Min
Typ
VD = 2VDRM
V(BO)
Breakover voltage
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
V(BO)
Impulse breakover
voltage
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
Max
Unit
±5
µA
±140
±160
±190
±230
±250
±270
±290
±360
±420
±500
±580
±700
±156
±176
±206
±248
±268
±288
±308
±378
±440
±252
±604
±724
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
V
V
Thermal Characteristics
Parameter
RθJA
NOTE
100
Junction to free air thermal resistance
Test Conditions
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7)
Min
Typ
Max
Unit
50
°C/W
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
TISP3xxxH3SL Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
IDRM
ID
VD
VDRM
-v
ID
IDRM
VD
VDRM
+v
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
VD = ±50 V and ID = ±10 µA
used for reliability release
PM4XAAC
Figure 1. Voltage- current Characteristic for Terminal Pairs
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
101
TISP3xxxH3SL Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TCHAG
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4HAF
1.10
VD = ±50 V
Normalized Breakover Voltage
|ID| - Off-State Current - µA
10
1
0·1
0·01
1.05
1.00
0.95
0·001
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
-25
150
Figure 2.
200
150
100
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
TC7AJ
Normalized Holding Current
IT - On-State Current - A
1
0.7
'3125
THRU
'3210
'3250
THRU
'3350
TC4HAD
1.5
20
15
2
1.5
NORMALIZED HOLDING CURENT
vs
JUNCTION TEMPERATURE
2.0
TA = 25 °C
tW = 100 µs
50
40
30
7
5
4
3
150
Figure 3.
70
10
0
25
50
75
100 125
TJ - Junction Temperature - °C
'3070
THRU
'3115
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1
1.5
2
3
4 5
VT - On-State Voltage - V
7
10
Figure 4.
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
Figure 5.
.
102
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
TISP3xxxH3SL Overvoltage Protector Series
Typical Characteristics
Capacitance Normalized to VD = 0
0.7
0.6
0.5
'3070 THRU '3115
0.4
0.3
'3125 THRU '3210
'3250 THRU '3350
0.2
0.5
1
2
3
5
10
20 30
VD - Off-state Voltage - V
Figure 6.
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
50
100 150
TC7XAN
'3290
'3350
'3250
'3180
'3210
'3125
'3135
'3145
70
'3115
TJ = 25 °C
Vd = 1 Vrms
0.8
75
'3095
0.9
TC7HAK
'3070
'3080
1
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
C - Differential Off-State Capacitance - pF
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
65
60
55
DC = Coff(-2 V) - Coff(-50 V)
50
45
40
35
30
50
60 70 80 90100
150
200 250 300
VDRM - Repetitive Peak Off-State Voltage - V
Figure 7.
103
TISP3xxxH3SL Overvoltage Protector Series
Typical Characteristics
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4HACA
20
VGEN = 600 V rms, 50/60 Hz
15
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB, TA = 25 °C
10
9
8
7
6
5
SIMULTANEOUS OPERATION
OF R AND T TERMINALS. G
TERMINAL CURRENT = 2xITSM(t)
4
3
2
1.5
1
0·1
1
10
100
t - Current Duration - s
1000
Figure 8.
1.00
VDRM DERATING FACTOR
vs
MINIMUM AMBIIENT TEMPERATURE
TC7HAM
700
600
0.99
TC4HAA
BELLCORE 2/10
500
400
Impulse Current - A
0.98
Derating Factor
IMPULSE RATING
vs
AMBIENT TEMPERATURE
0.97
'3070 THRU '3115
0.96
0.95
IEC 1.2/50, 8/20
300
FCC 10/160
250
ITU-T 10/700
200
FCC 10/560
150
'3125 THRU '3210
0.94
120
BELLCORE 10/1000
'3250 THRU '3350
0.93
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 9.
100
90
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80
TA - Ambient Temperature - °C
Figure 10.
.
104
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
TISP3xxxH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table below shows some common values.
Standard
Peak Voltage
Setting
V
Voltage
Waveform
µs
2/10
10/1000
10/160
10/560
9/720 †
9/720 †
0.5/700
Peak Current
Value
A
Current
Waveform
µs
TISP3xxxH3
25 °C Rating
A
Series
Resistance
Ω
2500
500
2/10
500
0
1000
100
10/1000
100
1500
200
10/160
250
0
800
100
10/560
160
0
FCC Part 68
(March 1998)
1500
37.5
5/320 †
200
0
1000
25
5/320 †
200
0
I3124
1500
37.5
0.2/310
200
0
37.5
1500
5/310
200
0
10/700
ITU-T K.20/K.21
100
4000
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
GR-1089-CORE
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictitious impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from
the minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over
a temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40 °C to 85 °C.
AC Power Testing
The protector can withstand the G return currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times
must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are
overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to
one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The
current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further
time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V, and -50 V. Where possible,
values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in
Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows
the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the
ring trip circuit. Figure 9 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not
be less than the maximum normal system voltages. The TISP3290H3, with a VDRM of 220 V, can be used for the protection of ring generators
producing 105 V rms of ring on a battery voltage of -58 V. The peak ring voltage will be 58 + 1.414*105 = 206.5 V. However, this is the open
circuit voltage and the connection of the line and its equipment will reduce the peak voltage.
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
105
TISP3xxxH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
Normal System Voltage Levels (continued)
For the extreme case of an unconnected line, the temperature at which clipping begins can be calculated using the data from Figure 9. To
possibly clip, the VDRM value has to be 206.5 V. This is a reduction of the 220 V 25 °C VDRM value by a factor of 206.5/220 = 0.94. Figure 9
shows that a 0.94 reduction will occur at an ambient temperature of -32 °C. In this example, the TISP3290H3 will allow normal equipment
operation, even on an open-circuit line, provided that the minimum expected ambient temperature does not fall below -32 °C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for
packages smaller than 27 mm (1.06 ”) on a side and the other for packages up to 48 mm (1.89 ”). The thermal measurements used the smaller
76.2 mm x 114.3 mm (3.0 ” x 4.5 ”) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance)
and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so
can dissipate higher power levels than indicated by the JESD51 values.
106
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
TISP3xxxH3SL Overvoltage Protector Series
MECHANICAL DATA
SL003 3-pin Plastic Single-in-line Package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
DIMENSIONS ARE:
SL003
METRIC
(INCHES)
3.20 - 3.40
(0.126 - 0.134)
9.25 - 9.75
(0.364 - 0.384)
Index
Notch
6.10 - 6.60
(0.240- 0.260)
8.31
(0.327)
MAX.
12.9
(0.492)
MAX.
4.267
(0.168)
MIN.
2
1
1.854
(0.073)
MAX.
3
2.54
Typical
(0.100)
(See Note A)
2 Places
0.203 - 0.356
(0.008- 0.014)
0.559 - 0.711
(0.022 - 0.028)
3 Places
MDXXCE
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
B. Body molding flash of up to 0.15 (0.006) may occur in the package lead plane.
JANUARY 1999 - REVISED OCTOBER 2000
Specifications are subject to change without notice.
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