New Product MBR(F,B)2090CT & MBR(F,B)20100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES TMBS® • • • • • • ITO-220AB TO-220AB 2 MBR2090CT MBR20100CT 3 MBRF2090CT MBRF20100CT 1 PIN 1 PIN 2 PIN 3 CASE PIN 1 1 2 Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) PIN 2 PIN 3 TO-263AB K • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. 2 1 MBRB2090CT MBRB20100CT K PIN 1 MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum HEATSINK PIN 2 PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR2090CT MBR20100CT UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V IF(AV) 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 130 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 0.5 A Maximum average forward rectified current at TC = 133 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min Document Number: 89033 Revision: 24-Jun-09 total device per diode dV/dt 10 000 V/µs TJ, TSTG - 65 to + 150 °C VAC 1500 V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product MBR(F,B)2090CT & MBR(F,B)20100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 10 A IF = 10 A IF = 20 A Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode at working peak reverse voltage (2) SYMBOL VALUE UNIT TC = 25 °C TC = 125 °C TC = 125 °C VF 0.80 0.65 0.75 V TJ = 25 °C TJ = 100 °C IR 100 6.0 µA mA Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT RθJA RθJC 60 2.0 3.5 60 2.0 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR20100CT-E3/4W 1.88 4W 50/tube Tube ITO-220AB MBRF20100CT-E3/4W 1.75 4W 50/tube Tube TO-263AB MBRB20100CT-E3/4W 1.38 4W 50/tube Tube TO-263AB MBRB20100CT-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 160 20 MBRF 16 MBR & MBRB Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 12 8 4 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 140 120 100 80 60 40 0 50 0 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89033 Revision: 24-Jun-09 New Product MBR(F,B)2090CT & MBR(F,B)20100CT Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Junction to Case 10 1 MBR(B) 0.1 0.01 1.0 0.1 1 100 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 10 TJ = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case 1 0.1 0.01 MBRF 0.001 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1 MHz Vsig = 50 mVp-p 1000 100 10 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 89033 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 New Product MBR(F,B)2090CT & MBR(F,B)20100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB TO-220AB 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.076 Ref. (1.93) Ref. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.600 (15.24) 0.580 (14.73) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.671 (17.04) 0.651 (16.54) PIN 1 2 0.035 (0.90) 0.028 (0.70) 7° Ref. 0.057 (1.45) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 7° Ref. 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 3 0.560 (14.22) 0.530 (13.46) 0.110 (2.79) 0.100 (2.54) 0.205 (5.20) 0.195 (4.95) 7° Ref. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.603 (15.32) 0.573 (14.55) 0.057 (1.45) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.076 Ref. (1.93) Ref. 45° Ref. 0.145 (3.68) 0.135 (3.43) PIN 2 0.190 (4.83) 0.170 (4.32) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89033 Revision: 24-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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