TOSHIBA RN2964FE

RN2961FE~RN2966FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2961FE,RN2962FE,RN2963FE
RN2964FE,RN2965FE,RN2966FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Unit: mm
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
•
Complementary to RN1961FE~RN1966FE
Equivalent Circuit and Bias Resistor Values
C
R2
B
R1
E
Type No.
R1 (kΩ)
R2 (kΩ)
RN2961FE
4.7
4.7
RN2962FE
10
10
RN2963FE
22
22
RN2964FE
47
47
RN2965FE
2.2
47
RN2966FE
4.7
47
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 0.003 g (typ.)
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Equivalent Circuit
(top view)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
RN2961FE~2966FE
RN2961FE~2964FE
RN2965FE, 2966FE
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
−50
V
VCEO
−50
V
VEBO
IC
RN2961FE~2966FE
PC (Note)
−10
−5
6
5
4
Q2
Q1
V
−100
mA
100
mW
Tj
150
°C
Tstg
−55~150
°C
1
2
3
Note: Total rating
1
2004-07-01
RN2961FE~RN2966FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
Test Condition
Min
Typ.
Max
ICBO
VCB = −50 V, IE = 0
⎯
⎯
−100
ICEO
VCE = −50 V, IB = 0
⎯
⎯
−500
RN2961FE
−0.82
⎯
−1.52
RN2962FE
−0.38
⎯
−0.71
−0.17
⎯
−0.33
−0.082
⎯
−0.15
−0.078
⎯
−0.145
−0.074
⎯
−0.138
RN2961FE
30
⎯
⎯
RN2962FE
50
⎯
⎯
70
⎯
⎯
80
⎯
⎯
RN2965FE
80
⎯
⎯
RN2966FE
80
⎯
⎯
⎯
−0.1
−0.3
RN2961FE
−1.1
⎯
−2.0
RN2962FE
−1.2
⎯
−2.4
−1.3
⎯
−3.0
−1.5
⎯
−5.0
RN2965FE
−0.6
⎯
−1.1
RN2966FE
−0.7
⎯
−1.3
−1.0
⎯
−1.5
−0.5
⎯
−0.8
RN2961FE~2966FE
RN2963FE
RN2964FE
VEB = −10 V, IC = 0
IEBO
RN2965FE
VEB = −5 V, IC = 0
RN2966FE
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
RN2963FE
RN2964FE
RN2961FE~2966FE
RN2963FE
RN2964FE
RN2961FE~2964FE
RN2965FE, 2966FE
hFE
VCE (sat)
VI (ON)
VCE = −5 V,
IC = −10 mA
IC = −5 mA,
IB = −0.25 mA
VCE = −0.2 V,
IC = −5 mA
V
⎯
200
⎯
MHz
VCB = −10 V, IE = 0,
f = 1 MHz
⎯
3
6
pF
3.29
4.7
6.11
Collector output
capacitance
RN2961FE~2966FE
Cob
RN2961FE
RN2962FE
7
10
13
RN2963FE
15.4
22
28.6
32.9
47
61.1
R1
⎯
RN2965FE
1.54
2.2
2.86
RN2966FE
3.29
4.7
6.11
RN2961FE~2964FE
0.9
1.0
1.1
RN2965FE
V
VCE = −10 V,
IC = −5 mA
fT
Resistor ratio
mA
VCE = −5 V,
IC = −0.1 mA
RN2961FE~2966FE
RN2964FE
nA
VI (OFF)
Transition frequency
Input resistor
Unit
R1/R2
RN2966FE
⎯
kΩ
0.0421 0.0468 0.0515
0.09
2
V
0.1
0.11
2004-07-01
RN2961FE~RN2966FE
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
3
2004-07-01
RN2961FE~RN2966FE
RN2962FE
RN2961FE
RN2963FE
(µA)
(µA)
RN2964FE
RN2966FE
RN2965FE
4
2004-07-01
RN2961FE~RN2966FE
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
5
2004-07-01
RN2961FE~RN2966FE
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
6
2004-07-01
RN2961FE~RN2966FE
Type Name
Marking
Type name
RN2961FE
YYA
Type name
RN2962FE
YYB
Type name
RN2963FE
YYC
Type name
RN2964FE
YYD
Type name
RN2965FE
YYE
Type name
RN2966FE
YYF
7
2004-07-01
RN2961FE~RN2966FE
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
8
2004-07-01