RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm · High-density mount is possible because of devices housed in very thin TESM packages. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. · Wide range of resistor values are available to use in various circuit designs. · Complementary to RN1112FT, RN1113FT Equivalent Circuit and Bias Resistor Values C B R1 E Maximum Ratings (Ta = 25°C) Characteristics ― JEITA ― TOSHIBA ― Weight: Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range JEDEC 1 g (typ.) 2002-01-24 RN2112FT,RN2113FT Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 ¾ ¾ -100 nA Emitter cut-off current IEBO VEB = -5 V, IC = 0 ¾ ¾ -100 nA DC current gain hFE VCE = -5 V, IC = -1 mA 120 ¾ 400 Collector-emitter saturation voltage VCE (sat) Transition frequency fT Collector output capacitance Input resistor Type Name Cob RN2112FT IC = -5 mA, IB = -0.25 mA ¾ -0.1 -0.3 V VCE = -10 V, IC = -5 mA ¾ 200 ¾ MHz VCB = -10 V, IE = 0, f = 1 MHz ¾ 3 6 pF 15.4 22 28.6 32.9 47 61.1 ¾ R1 RN2113FT kW Marking Type name RN1112FT YN Type name RN1113FT YP 2 2002-01-24 RN2112FT,RN2113FT RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 2002-01-24