New Product U3B, U3C, U3D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-214AB (SMC) TYPICAL APPLICATIONS For us in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 100 V, 150 V, 200 V IFSM 100 A trr 20 ns VF at IF = 3.0 A 0.74 V TJ max. 150 °C MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM TM = 134 °C TM = 125 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range U3B U3C U3D U3B U3C U3D 100 150 200 IF(AV) (1) 2.0 IF(AV) (2) 3.0 UNIT V A IFSM 100 A TJ, TSTG - 55 to + 150 °C Notes (1) Free air, mounted on recommended copper pad area (2) Units mounted on P.C.B. with 0.47" x 0.47" (12 mm x 12 mm) copper pad areas Document Number: 89066 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product U3B, U3C, U3D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Instantaneous forward voltage IF = 3.0 A Reverse current Rated VR TA = 25 °C VF (1) TA = 100 °C TA = 25 °C IR (2) TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse recovery time SYMBOL TA = 25 °C IF = 3.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM Storage charge IF = 3.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM Typical junction capacitance 4.0 V, 1 MHz trr TA = 25 °C TYP. MAX. 0.85 0.90 0.74 0.83 - 10 250 500 - 20 25 30 TA = 100 °C 35 50 TA = 25 °C 9 15 22 35 25 - Qrr TA = 100 °C CJ UNIT V μA ns nC pF Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance U3B U3C RθJA (1) 92 RθJM (1) 10 U3D UNIT °C/W Note Free air, mounted on recommended copper pad area. Thermal resistance RθJA - junction to ambient, RθJM - junction to mount (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE U3D-E3/57T 0.239 57T 850 7" diameter plastic tape and reel U3D-E3/9AT 0.239 9AT 3500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.0 D = 0.5 2.0 1.0 D = 0.8 D = 0.3 2.5 Average Power Loss (W) Average Forward Rectified Current (A) 3.0 D = 0.2 2.0 D = 1.0 D = 0.1 1.5 T 1.0 0.5 D = tp/T tp 0 0 80 90 100 110 120 130 140 150 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89066 Revision: 13-Oct-09 New Product U3B, U3C, U3D Vishay General Semiconductor 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C TA = 25 °C 0.1 10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1 0.1 1.3 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 10 000 Instantaneous Reverse Leakage Current (μA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capactiance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 1000 TA = 100 °C 100 10 TA = 25 °C 1 0.1 10 20 30 40 50 60 70 80 90 Junction to Ambient 10 1 0.1 0.001 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Document Number: 89066 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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