Reflective Photosensors (Photo Reflectors) CNB2001 Reflective Photosensor Unit : mm Overview 3.4 1.8 CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor in a single resin package. 1 Visible light cutoff resin is used ,,,,,, High current-transfer ratio Unit 6 V IF 50 mA PD*1 75 mW IC 30 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage VCEO 35 V VECO 6 V Collector power dissipation PC *2 75 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –40 to +100 ˚C Collector current Temperature 0.85 1.5 2 3 4 Pin connection Color of rank 1: Anode 2: Cathode 3: Emitter 4: Collector Absolute Maximum Ratings (Ta = 25˚C) VR 4 4-0.5 , ,,, Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Chip center 2 4-0.7 Symbol Ratings C0.5 4.3±0.3 2.7 0.35 Features Reflow-compatible reflective photosensor Parameter 3 0.15 0.05+0.1 –0.05 1 (Note) Tolerance unless otherwise specified is ±0.2 *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min Forward voltage (DC) Input characteristics Reverse current (DC) VF IF = 20mA IR VR = 3V Output characteristics Collector cutoff current ICEO VCE = 10V IC*1 VCC = 2V, IF = 4mA, RL = 100Ω, d = 1mm Collector current Leakage current ID Transfer Collector to emitter saturation voltage VCE(sat) characteristics tr*2 Response time tf*2 *1 Output Current (IC) measurement method (see figure below.) 1.2 1.4 V 10 µA µA mA VCC = 2V, IF = 4mA, RL = 100Ω 5.0 µA IF = 4mA, IC = 0.5mA 1.2 V 0.52 VCC = 2V, IC = 10mA, 120 RL = 100Ω 115 µs Response time measurement circuit (see figure below.) Color indication of classifications Glass plate Evaporated Al d = 1mm Sig.IN 50Ω Sig. VCC OUT ,,,, ,, IC VCC ,, RL Unit 1.0 tr : Rise time tf : Fall time Sig.IN IF max 15.0 , ,,, ,,, ,,, ,,, ,,, ,,,, Glass plate Evaporated Al d = 1mm *2 typ RL Sig.OUT tr tf 90% 10% Class IC (µA) Color Q 0.52 to 1.94 Orange R 1.45 to 5.4 White S 4.0 to 15.0 Light blue Input and output are handled electrically. This product is not designed to withstand radiation. 1 CNB2001 Reflective Photosensors (Photo Reflectors) IF , IC — Ta IF — VF IC — IF 10 3 60 Ta = 25˚C IF IC 20 10 IC (mA) 30 20 20 40 60 80 0 100 0 0.4 0.8 1.2 1.6 2.0 IC — Ta Ta = 25˚C d = 1mm 0.8 0.4 20 40 60 80 2mA 1 1mA 10 –1 Ambient temperature Ta (˚C ) ICEO — Ta 1 Rise time , fall time 10 –1 60 80 Ambient temperature Ta (˚C ) 100 40 60 80 100 IC — d VCC = 2V Ta = 25˚C IF = 4mA VCC = 2V Ta = 25˚C : tr : tf 10 4 RL = 1kΩ 10 3 500Ω 100Ω 10 2 10 10 –2 20 100 10 1 0 Ambient temperature Ta (˚C ) 10 –1 1 Collector current IC (mA) 10 IC (%) tr , tf (µs) 10 2 40 40 tr , tf — IC VCE = 10V 20 80 0 – 40 – 20 10 2 10 10 5 0 120 Collector to emitter voltage VCE (V) 10 3 10 –2 – 40 – 20 VCC = 2V IF = 4mA RL = 100Ω 4mA 10 –2 10 –1 100 IC (%) IF = 10mA 10 10 3 160 Relative output current 1mA IC (mA) 10mA Collector current VF (V) Forward voltage 1.2 10 2 10 Forward current IF (mA) IF = 50mA 0 1 IC — VCE 10 2 0 – 40 – 20 10 –1 2.4 Forward voltage VF (V) VF — Ta ICEO (µA) 1 80 60 , , 0 1.6 Dark current 10 10 Ambient temperature Ta (˚C ) 2 10 2 Relative output current 0 – 25 40 Collector current 40 30 VCC = 5V Ta = 25˚C d = 1mm RL = 100Ω 50 IF (mA) 50 Forward current Forward current, collector current IF , IC (mA) 60 d 40 20 0 0 2 4 6 Distance d (mm) 8 10