Composite Transistors XP1E554 Silicon NPN epitaxial planer transistor 2.1±0.1 0.65 2 Parameter (Ta=25˚C) Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V VEBO 5 V IC 100 mA Peak collector current ICP 300 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature ■ Electrical Characteristics Parameter 4 0.12 – 0.02 +0.05 1 : Base (Tr1) 2 : Emitter (Tr1) Collector (Tr2) Symbol Rating Emitter to base voltage of element Collector current 5 0 to 0.1 2SC3757 × 2 elements ■ Absolute Maximum Ratings 0.425 0.2 ■ Basic Part Number of Element ● 1 3 0.9± 0.1 ● Two elements incorporated into one package. (Tr1 emitter is connected to Tr2 collecter.) Reduction of the mounting area and assembly cost by one half. Low VCE(sat). 1.25±0.1 0.7±0.1 ● 2.0±0.1 ■ Features 0.65 0.425 ● 0.2±0.05 Unit: mm For high speed switching 0.2±0.1 3 : Base (Tr2) 4 : Emitter (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 5S Internal Connection 1 Tr1 6 2 3 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 15V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 4V, IC = 0 0.1 µA Forward current transfer ratio hFE VCE = 1V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 60 200 Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Turn-on time ton 17 Turn-off time toff 17 ns Storage time tstg 10 ns 0.17 0.25 1.0 450 2 V V MHz 6 pF ns 1 Composite Transistors XP1E554 ton, toff Test Circuit Total power dissipation PT (mW) 90% VCC=10V 50Ω Vbb=2V 0 Vin 10% Vout 10% 10% Vin 10% Vout Vin=10V VCC=3V Vbb= –3V Vin 90Ω 500Ω 3.3kΩ 50Ω 1kΩ 910Ω 0.1µF 500Ω 220Ω 50Ω Vout A Vout 3.3kΩ 200 0.1µF 0.1µF Vin=10V PT — Ta tstg Test Circuit 90% Vout ton tstg toff 180 160 140 120 100 80 60 40 20 (Wave form at A) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0.2 0.4 0.6 0.8 1.0 30 10 3 1 Ta=75˚C 1.2 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.1 0 IC/IB=10 1 3 10 400 300 Ta=75˚C 25˚C –25˚C 1 3 10 Collector current IC 3 Ta=–25˚C 25˚C 75˚C 1 0.3 0.1 0.03 1 100 10 3 30 (mA) 100 400 300 200 100 –3 –10 –30 –100 –300 –1000 Emitter current IE 100 300 1000 Cob — VCB 500 0 –1 30 Collector current IC (mA) 6 VCB=10V Ta=25˚C Transition frequency fT (MHz) 500 0.3 10 fT — IE VCE=1V Forward current transfer ratio hFE 30 600 100 30 0.01 0.3 hFE — IC 600 200 IC/IB=10 Collector current IC (mA) Collector to emitter voltage VCE (V) 0 0.1 Base to emitter saturation voltage VBE(sat) (V) IB=3.0mA 100 (mA) Collector output capacitance Cob (pF) Collector current IC (mA) 100 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 2 VBE(sat) — IC 100 120 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V)