TLP561J TOSHIBA Photocoupler GaAs IRed & Photo−Triac TLP561J Triac Driver Programmable Controllers AC−Output Module Solid State Relay Unit in mm The TOSHIBA TLP561J consists of a zero voltage crossing turn−on photo−triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. • Peak off−state voltage: 600V(min.) • On−state current: 100mA(max.) • Isolation voltage: 2500Vrms(min.) • UL recognized: UL1577, file no. E67349 • Isolation operating voltage: 2500Vac or 300Vdc for isolation Groupe C*1 • Trigger LED current Classi− Fication* Trigger LED Current (mA) Marking Of Classification VT=6V, Ta=25°C Min. Max. (IFT7) ― 7 T7 Standard ― 10 T7, blank TOSHIBA 11−7A9 Weight: 0.39g Pin Configuration (top view) *Ex. (IFT7); TLP561J(IFT7) (Note ): Application type name for certification test, please use standard product type name, i.e. TLP561J(IFT7): TLP561J *1: According to VDE0110, table 4. 1 2002-09-25 TLP561J Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VDRM 600 V Forward current LED Forward current derating (Ta ≥ 53°C) Off−state output terminal voltage Detector On−state RMS current Ta = 25°C 100 IT(RMS) Ta = 70°C mA 50 ΔIT / °C −1.1 mA / °C ITP 2 A ITSM 1.2 A Tj 115 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C Lead soldering temperature (10s) Tsol 260 °C Isolation voltage (AC, 1min., R.H. ≤ 60%) BVS 2500 Vrms On−state current derating (Ta ≥ 25°C) Peak on−state current (100μs pulse, 120pps) Peak nonrepetitive surge current (Pw = 10ms, DC = 10%) Junction temperature Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit VAC ― ― 240 Vac Forward current IF 15 20 25 mA Peak on−state current ITP ― ― ― A Operating temperature Topr −25 ― 85 °C Supply voltage 2 2002-09-25 TLP561J Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0, f = 1MHz ― 30 ― pF Peak off−state current IDRM VDRM = 600V ― 10 1000 nA Peak on−state voltage VTM ITM = 100mA ― 1.7 3.0 V ― 0.6 ― mA 200 500 ― V / μs ― 0.2 ― V / μs Min. Typ. Max. Unit Holding current IH ― Critical rate of rise of off−state voltage dv / dt Vin = 240Vrms, Ta = 85°C Critical rate of rise of commutating voltage dv / dt(c) Vin = 60Vrms, IT = 15mA (Fig.1) (Fig.1) Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Trigger LED current IFT VT = 6V, RL = 100Ω ― 5 10 mA Inhibit voltage VIH IF = Rated IFT ― ― 50 V Leakage in inhibited state IIH IF = Rated IFT VT = Rated VDRM ― 200 600 μA Capacitance (input to output) CS VS = 0, f = 1MHz ― 0.8 ― pF Isolation resistance RS VS = 500V ― Ω AC, 1 minute Isolation voltage BVS 5×10 10 10 14 2500 ― ― AC, 1 second, in oil ― 5000 ― DC, 1 minute, in oil ― 5000 ― Vrms Vdc Fig.1: dv / dt test circuit 3 2002-09-25 TLP561J 4 2002-09-25 TLP561J 5 2002-09-25 TLP561J RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2002-09-25