TLP161G TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP161G Triac Drive Programmable Controllers AC−Output Module Solid State Relay Unit in mm The TOSHIBA mini flat coupler TLP161G is a small outline coupler, suitable for surface mount assembly. The TLP161G consists of a photo triac, optically coupled to a gallium arsenide infrared emitting diode. • Zero−voltage crossing turn−on • Peak off−state voltage: 400V(min.) • Trigger LED current: 10mA(max.) • On−state current: 70mA(max.) • Isolation voltage: 2500Vrms(min.) • UL recognized: UL1577, file no. E67349 TOSHIBA 11−4C3 Weight: 0.09 g Trigger LED Current Classi− fication* Trigger LED Current (mA) VT=3V, Ta=25°C Min. Max. Marking Of Classification (IFT5) ― 5 T5 (IFT7) ― 7 T5, T7 Standard ― 10 T5, T7, blank *Ex. (IFT5); TLP161G(IFT5) (Note) Application type name for certification test, please use standard product type name, i.e. TLP161G(IFT5): TLP161G Pin Configurations 1 3 6 ZC 4 1. ANODE 3. CATHODE 4. TERMINAL 1 6. TERMINAL 2 1 2007-10-01 TLP161G Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VDRM 400 V Forward current LED Forward current derating (Ta ≥ 53°C) Off−state output terminal voltage Detector On−state RMS current Ta=25°C 70 IT(RMS) Ta=70°C On−state current derating (Ta ≥ 25°C) mA 40 ΔIT / °C −0.67 mA / °C ITP 2 A ITSM 1.2 A Tj 115 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C Lead soldering temperature (10s) Tsol 260 °C BVS 2500 Vrms Peak on−state current (100μs pulse, 120pps) Peak nonrepetitive surge current (PW=10ms, DC=10%) Junction temperature Isolation voltage (AC, 1min., R.H.≤ 60%) (Note) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 120 Vac Forward current IF 15 20 25 mA Peak on−state current ITP ― ― 1 A Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP161G Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.0 1.15 1.3 V Reverse current IR VR=5V ― ― 10 μA Capacitance CT V=0, f=1MHz ― 30 ― pF Peak off−state current IDRM VDRM=400V ― 10 1000 nA Peak on−state voltage VTM ITM=70 mA ― 1.7 2.8 V ― 0.6 ― mA Holding current IH ― Critical rate of rise of off−state voltage dv / dt Vin=120Vrms, Ta=85°C (Fig.1) 200 500 ― V / μs Critical rate of rise of commutating voltage dv / dt(c) Vin=30Vrms, IT=15mA (Fig.1) ― 0.2 ― V / μs Min. Typ. Max. Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Trigger LED current IFT VT=3V ― 5 10 mA Inhibit voltage VIH IF=rated IFT ― ― 40 V Leakage in inhibited state IIH IF=rated IFT VT=rated VDRM ― 100 300 μA Capacitance (input to output) CS VS=0, f=1MHz ― 0.8 ― pF 10 ― Ω 2500 ― ― AC, 1 second, in oil ― 5000 ― DC, 1 minute, in oil ― 5000 ― Isolation resistance RS 12 VS=500V, R.H.≤ 60% 1×10 AC, 1 minute Isolation voltage Fig.1 BVS Vrms Vdc dv / dt test circuit Rin VCC 14 + − 120Ω Vin 1 3 5V,VCC 6 4 RL 0V ~ dv / dt (c) 2k Ω 3 dv / dt 2007-10-01 TLP161G IT(RMS) – Ta 120 50 100 R.M.S. on-state current IT(RMS) (mA) Allowable forward current IF (mA) IF – Ta 60 40 30 20 10 80 60 40 20 0 −20 0 20 40 80 60 100 0 −20 120 Ambient temperature Ta (°C) 0 20 80 100 120 IF – VF 100 Pulse width ≤ 100 μs Ta = 25°C 50 (mA) Ta = 25°C 1000 IF 500 300 Forward current Allowable pulse forward current IFP (mA) 60 Ambient temperature Ta (°C) IFP – DR 3000 40 100 50 30 30 10 5 3 1 0.5 0.3 10 3 10−3 3 10−2 10−1 3 3 0.1 0.6 100 0.8 1.0 1.2 Forward voltage Duty cycle ratio DR ΔVF / ΔTa – IF 1.4 VF 1.6 1.8 (V) IFP – VFP −3.2 IFP (mA) −2.8 −2.4 −2.0 Pulse forward current Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) 1000 −1.6 −1.2 −0.8 −0.4 0.1 0.3 1 3 Forward current IF 10 500 300 100 50 30 10 Pulse width ≤ 10 μs 5 Repetitive frequency 3 = 100 Hz Ta = 25°C 30 50 1 0.6 (mA) 1.0 1.4 1.8 2.2 Pulse forward voltage VFP 4 2.6 3.0 (V) 2007-10-01 TLP161G Normalized IH – Ta Normalized IFT – Ta 3 3 2 1.2 1 1.2 1 Holding current IH (arbitrary unit) Trigger led current IFT (arbitrary unit) VT = 3V 2 0.5 0.3 0.1 −40 −20 0 20 40 60 80 0.5 0.3 0.1 −40 100 Ambient temperature Ta (°C) −20 VDRM = Rated Off-state output terminal voltage VDRM (arbitrary unit) Peak off-state current IDRM (arbitrary unit) 60 80 100 Normalized VDRM – Ta 1 100 20 0 40 60 1.0 0.8 0.6 0.4 0.2 −40 100 80 1.2 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Normalized IIH – Ta Normalized VIH – Ta 3 3 2 2 1.2 1 1.2 1 Inhibit current IIH (arbitrary unit) Inhibit voltage VIH (arbitrary unit) 40 1.4 102 10 20 Ambient temperature Ta (°C) Normalized IDRM – Ta 103 0 0.5 0.3 0.5 0.3 IF = Rated IFT IF = Rated IFT VT = Rated VDRM 0.1 −40 −20 0 20 40 60 80 0.1 −40 100 Ambient temperature Ta (°C) −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 5 2007-10-01 TLP161G RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01