BPW20RF Vishay Semiconductors Silicon PN Photodiode Description BPW20RF is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. Equipped with a clear, flat glass window, the spectral responsitivity reaches from blue to near infrared. 94 8482 Features Applications • • • • • • • • • • • • • • Sensor for light measuring techniques in cameras, photometers, color analyzers, exposure meters (e.g. solariums) and other medical and industrial measuring and control applications. Hermetically sealed TO-5 case Flat glass window Cathode connected to case Wide viewing angle ϕ = ± 50 ° Large radiant sensitive area (A = 7.5 mm2) Suitable for visible and near infrared radiation High sensitivity UV enhanced Low dark current High shunt resistance Excellent linearity For photodiode and photovoltaic cell operation Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Power Dissipation Tamb ≤ 50 °C Junction Temperature Symbol Value VR 10 Unit V PV 300 mW Tj 125 °C Operating Temperature Range Tamb - 55 to + 125 °C Storage Temperature Range Tstg - 55 to + 125 °C Tsd 260 °C RthJA 250 K/W Soldering Temperature Thermal Resistance Junction/ Ambient Document Number 81570 Rev. 1.3, 08-Mar-05 t≤5s www.vishay.com 1 BPW20RF Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min VF Typ. Max Unit 1.0 1.3 V Forward Voltage IF = 50 mA Breakdown Voltage IR = 20 µA, E = 0 Reverse Dark Current VR = 5 V, E = 0 Iro 2 Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 1.2 VR = 5 V, f = 1 MHz, E = 0 CD 400 pF Dark Resistance VR = 10 mV RD 38 GΩ V(BR) 10 V 30 nA nF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Open Circuit Voltage Symbol Min Typ. EA = 1 klx Vo 330 500 Max Unit mV -2 mV/K Temp. Coefficient of Vo EA = 1 klx TKVo Short Circuit Current EA = 1 klx Ik Temp. Coefficient of Ik EA = 1 klx TKIk Reverse Light Current EA = 1 klx, VR = 5 V Ira 60 µA Ee = 1 mW/cm , λ = 950 nm, VR = 5 V Ira 42 µA Angle of Half Sensitivity ϕ ± 50 deg Wavelength of Peak Sensitivity λp 920 nm λ0.5 550 to 1040 nm 2 Range of Spectral Bandwidth 20 20 60 µA 0.1 %/K Rise Time VR = 0 V, RL = 1 kΩ, λ = 820 nm tr 3.4 µs Fall Time VR = 0 V, RL = 1 kΩ, λ = 820 nm tf 3.7 µs I ro - Reverse Dark Current ( nA ) 10 4 10 3 10 2 VR = 5 V 10 1 10 0 20 94 8468 40 60 80 100 Figure 1. Reverse Dark Current vs. Ambient Temperature 2 1.3 1.2 VR = 5 V λ = 950 nm 1.1 1.0 0.9 0.8 0 120 Tamb - Ambient Temperature ( ° C ) www.vishay.com I ra rel - Relative Reverse Light Current Typical Characteristics (Tamb = 25 °C unless otherwise specified) 94 8469 20 40 60 80 100 120 Tamb - Ambient Temperature ( ° C ) Figure 2. Relative Reverse Light Current vs. Ambient Temperature Document Number 81570 Rev. 1.3, 08-Mar-05 BPW20RF Vishay Semiconductors 3 1400 10 2 C D - Diode Capacitance ( pF ) I k - Short Circuit Current ( µA ) 10 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 800 600 400 200 0 0.1 10 VR = 5 V λ = 950 nm 0.1 0.01 0.1 1 0.8 0.6 0.4 0.2 0 350 550 750 1150 Figure 7. Relative Spectral Sensitivity vs. Wavelength 0° 100 Ira - Reverse Light Current ( µA ) 950 λ - Wavelength ( nm ) 94 8474 Figure 4. Reverse Light Current vs. Irradiance 10 ° 20 ° 30° Srel - Relative Sensitivity 1 mW/cm 2 0.5 mW/cm2 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm 2 λ = 950 nm 1 0.1 1 94 8472 100 1.0 10 E e - Irradiance ( mW/ cm 2 ) 94 8471 10 Figure 6. Diode Capacitance vs. Reverse Voltage S ( λ )rel - Relative Spectral Sensitivity Ira - Reverse Light Current ( µA ) 100 1 V R - Reverse Voltage ( V ) 94 8473 Figure 3. Short Circuit Current vs. Illuminance 1 E=0 f = 1 MHz 1000 5 E A - Illuminance ( lx ) 18959 1200 50° 0.8 60° 70° 80° 10 0.6 100 Figure 5. Reverse Light Current vs. Reverse Voltage Rev. 1.3, 08-Mar-05 0.9 0.7 V R - Reverse Voltage ( V ) Document Number 81570 40° 1.0 0.4 0.2 0 0.2 0.4 0.6 94 8475 Figure 8. Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com 3 BPW20RF Vishay Semiconductors Package Dimensions in mm 96 12181 www.vishay.com 4 Document Number 81570 Rev. 1.3, 08-Mar-05 BPW20RF Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81570 Rev. 1.3, 08-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1