TCSS1100/ TCSS2100 Vishay Telefunken Transmissive Optical Sensor Description This device has a compact construction where the emitting-light sources and the detectors are located face to face on the same optical axes. The operating wavelength is 950 nm. The detector consists of a photologic-IC with Schmitt trigger and open collector output. B) A) Applications D Detection of opaque material, documents etc. D Paper position sensor in copy machines D Position sensor for shaft encoder 15132 Features D Output: 95 10821 ‘LOW’ when infrared beam is not interrupted D Inverter-open collector D TTL compatible D Built-in voltage regulator D Plastic polycarbonate case, protected against ambient light D No adjustment necessary D Two package variations + VO _ + 7.6 0.3” Top view Handling Precautions Connect a capacitor C of more than 100 nF between VS1 and ground in order to stabilize power supply voltage! Order Instruction Ordering Code TCSS1100A) TCSS2100B) Document Number 83761 Rev. A4, 08–Jun–99 Resolution (mm) / Aperture (mm) 0.6 / 1.0 0.6 / 1.0 Remarks No mounting flags With two mounting flags www.vishay.com 1 (7) TCSS1100/ TCSS2100 Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 3 100 100 Unit V mA A mW °C Symbol VS1 VS2 IO PV Tj Value 6.5 18 20 250 100 Unit V V mA mW °C Symbol Ptot Tamb Tstg Tsd Value 250 –25 to +85 –40 to +100 260 Unit mW °C °C °C Output (Detector) Parameter Supply voltages Test Conditions Output current Power dissipation Junction temperature Tamb ≤ 25°C Coupler Parameter Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions Tamb ≤ 25°C 2 mm from case, t ≤ 5 s Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions Symbol VS1 VS2 Min. 4.75 4.0 Typ. Max. 5.25 16 Unit V V Test Conditions VS1 = 16 V VS1 = VS2 = 16 V, IF = 0 VS1 = 5 V VS1 = 5 V IOL = 16 mA, IF ≥ ITF, VS1 = 5 V IF 3x IFT, VS1 = VS2 = 5 V, RL = 1 kW Symbol IS1 IOH IFT IFoff/IFon VOL fsw Min. Typ. 3 Max. 5 1 10 Unit mA mA mA % V kHz Output (Detector) Parameter Supply voltage range Coupler Parameter Supply current Output current Input threshold current Hysteresis Output voltage Switching frequency www.vishay.com 2 (7) 5 80 0.15 200 0.4 Document Number 83761 Rev. A4, 08–Jun–99 TCSS1100/ TCSS2100 Vishay Telefunken Switching Characteristics Parameter Rise time Turn-on time Fall time Turn-off time Test Conditions VS1 = VS2 = 5 V, IF = 3 x IFT, RL = 1 kW (see figure 1) 0 IF IS1 RG = 50 W tp = 0.01 T tp = 50 ms Typ. 50.0 1.0 20.0 3.0 Unit ns ms ns ms VS2 = 5 V (16 V) VS1 = 5 V 3 x IF Symbol tr ton tf toff RL 270 Ω (1 kΩ) IO VO Channel II 50 W Channel I y x 20 pF Oscilloscope RL 1 MW CL 95 10791 Figure 1. Test circuit for: tr, ton, tf, toff 95 10820 95 10819 50% IF o Channel I ton HIGH VO toff IFoff IFon 90% LOW VO o Channel II 10% tf tr Figure 2. Pulse diagram Document Number 83761 Rev. A4, 08–Jun–99 0.8 1.0 IFrel Figure 3. Hysteresis www.vishay.com 3 (7) TCSS1100/ TCSS2100 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 1.2 Coupled device I Srel – Relative Supply Current P tot – Total Power Dissipation ( mW ) 400 300 200 Photodetector 100 IR-diode 0 0 25 50 75 1.1 1.0 0.9 0.8 –30–20–10 0 10 20 30 40 50 60 70 80 90 100 100 Tamb – Ambient Temperature ( °C ) 96 11945 VS1=VS2=5V RL=1kW Figure 7. Relative Supply Current vs. Ambient Temperature Figure 4. Total Power Dissipation vs. Ambient Temperature IOH – High Level Output Current ( nA ) I F – Forward Current ( mA ) 1000.0 100.0 10.0 1.0 1000 VS1=5V VS2=20V IF=0 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 95 11079 VF – Forward Voltage ( V ) 96 11862 I FTrel – Relative Threshold Forward Current Figure 5. Forward Current vs. Forward Voltage 10 1 –25 0.1 0 Tamb – Ambient Temperature ( °C ) 96 11946 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) Figure 8. High Level Output Current vs. Ambient Temperature 2.0 1.5 1.0 0.5 0 –25 95 11080 VS1=VS2=5V RL=1kW 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) Figure 6. Relative Threshold Forward Current vs. Ambient Temperature www.vishay.com 4 (7) Document Number 83761 Rev. A4, 08–Jun–99 TCSS1100/ TCSS2100 Vishay Telefunken Dimensions of TCSS1100 in mm 96 12096 Document Number 83761 Rev. A4, 08–Jun–99 www.vishay.com 5 (7) TCSS1100/ TCSS2100 Vishay Telefunken Dimensions of TCSS2100 in mm 96 12097 www.vishay.com 6 (7) Document Number 83761 Rev. A4, 08–Jun–99 TCSS1100/ TCSS2100 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83761 Rev. A4, 08–Jun–99 www.vishay.com 7 (7)