SSM5G09TU Silicon P Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm • Combined Pch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS −12 V Gate-Source voltage VGSS ±8 V ID −1.5 Drain current DC Pulse Drain power dissipation Channel temperature IDP (Note 2) −6.0 PD (Note 1) 0.5 t = 10s 0.8 Tch 150 A W °C Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY UFV DIODE Characteristics Symbol Rating Unit VRM 15 V Reverse voltage VR 12 V Average forward current IO 0.5 A IFSM 2 (50 Hz) A Tj 125 °C Maximum (peak) reverse voltage Peak one cycle surge forward current (non-repetitive) Junction temperature JEDEC ⎯ JEITA ⎯ TOSHIBA 2-2R1A Weight: 7 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Characteristics Symbol Rating Unit Storage temperature Tstg −55~125 °C Operating temperature Topr (Note 3) −40~85 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2) Note 2: The pulse width limited by max channel temperature. Note 3: Operating temperature limited by max channel temperature and max junction temperature. 1 2007-11-01 SSM5G09TU Marking Equivalent Circuit 5 4 5 3 1 4 KEP 1 2 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static discharge. Operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2 2007-11-01 SSM5G09TU MOSFET Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Test Condition Min Typ. Max Unit μA IGSS VGS = ±8 V, VDS = 0 ⎯ ⎯ ±1 V (BR) DSS ID = −1 mA, VGS = 0 −12 ⎯ ⎯ V (BR) DSX ID = −1 mA, VGS = +8 V −4 ⎯ ⎯ IDSS VDS = −12 V, VGS = 0 V ⎯ ⎯ −1 μA −0.5 ⎯ −1.1 V (Note 4) 1.75 3.5 ⎯ S (Note 4) ⎯ 100 130 ID = −0.75 A, VGS = −2.5 V (Note 4) ⎯ 130 200 Gate threshold voltage Vth VDS = −3 V, ID = −0.1 mA Forward transfer admittance |Yfs| VDS = −3 V, ID = −0.75 A Drain-Source on-resistance RDS (ON) ID = −0.75 A, VGS = −4 V mΩ Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 550 ⎯ pF Reverse transfer capacitance Crss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 155 ⎯ pF Output capacitance Coss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 170 ⎯ pF Switching time Turn-on time ton VDD = −10 V, ID = −0.75 A ⎯ 34 ⎯ Turn-off time toff VGS = 0~−2.5 V, RG = 4.7 Ω ⎯ 28 ⎯ ns Note 4: Pulse measurement Switching Time Test Circuit (a) Test circuit 0 OUT 10 μs RG IN −2.5 V (b) VIN VDD = −10 V RG = 4.7 Ω Duty < = 1% VIN: tr, tf < 5 ns Common source Ta = 25°C 0V 10% 90% −2.5 V VDS (ON) 90% (c) VOUT VDD 10% VDD tr ton tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 3 2007-11-01 SSM5G09TU Schottky Diode Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF (1) IF = 0.3 A ⎯ 0.33 0.39 V VF (2) IF = 0.5 A ⎯ 0.37 0.43 V Reverse current IR VR = 12 V ⎯ ⎯ 100 μA Total capacitance CT VR = 0 V, f = 1 MHz ⎯ 80 ⎯ pF Forward voltage Precaution The schottky barrier diode of this product are having large-reverse-current-leakage characteristic compare to the other switching diodes. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Be sure to take forward and reverse loss into consideration when you design. 4 2007-11-01 SSM5G09TU MOS Electrical Characteristics Graph I D - V D S (MO S FET) I D - V G S (MO S FET) -4 -4.0V Common Source VDS =-3V - 1000 Drain current I D (mA) -2.0V -3 Drain current I D (mA) - 10000 Common Source Ta=25℃ -2.5V -3.5 -2.5 VGS =-1.8V -2 -1.5 - 100 Ta=85℃ 25℃ - 10 -25℃ -1 -1 - 0.1 -0.5 0 0 -0.5 -1 -1.5 - 0.01 -2 0 -0.5 -1 R D S(O N) - I D (MO S FET ) -2 -2.5 R D S(O N) - V G S (MO S FET ) 0.5 300 Common Source I D=-0.6A Common Source Ta=25℃ -2.5V 100 VGS =-4.0V R DS(ON) (Ω) Drain-Source on-resistance 0.4 200 R DS(ON) (mΩ) Drain-Source on-resistance -1.5 Gate-Source voltage V GS (V) Drain-Source voltage V DS (V) 0.3 0.2 25℃ Ta=85℃ 0.1 -25℃ 0 0 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 0 -2 Drain current I D (A) -6 -8 V th - Ta (MO S FET) R D S(O N) - Ta (MO S FET) -2 300 Common Source I D=-0.6A -1.8 Common Source I D=-0.1mA -1.6 VDS =-3V -1.4 Gate threshold voltage Vth(V) 200 -2.5V R DS(ON) (Ω) Drain-Source on-resistance -4 Gate-Source Voltage V GS (V) 100 -4.0V -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0 -25 0 25 50 75 -25 100 Ambient temperture Ta (℃) 0 25 50 75 100 Ambient temperture Ta (℃) 5 2007-11-01 SSM5G09TU |Yfs| - I D (MO S FET ) C - V D S (MO S FET ) 100 1000 C iss 10 C oss Capacitance C (pF) Forward transfer admittance |Yfs| (mS) Commonm Source VDS =-3V Ta=25℃ 1 C rss 100 Common Source VGS =0V f=1MHz Ta=25℃ 0.1 0.01 - 0.001 - 0.1 - 0.01 10 - 0.1 - 10 -1 -1 - 100 t - I D (MO S FET) I D R - V D S (MO S FET) 1000 -2 Common Source VGS =0 Ta=25℃ -1.5 100 D IDR G Common Source VDD=-10V toff Switching time t (ns) Drain reverse current I DR (mA) - 10 Drain-Source voltage V DS (V) Drain Current I D (A) -1 S -0.5 VGS =0～2.5V Ta=25℃ tf ton 10 tr 1 0 0 0.2 0.4 0.6 0.8 0.1 - 0.01 1 Drain-Source voltage V DS (V) - 0.1 -1 - 10 Drain curren I D (mA) Dyn a mic In p u t Ch a ra cteristic (MO S FET) -10 Common Source VDD=-10V Gate-Source voltage V GS (V) -8 I D=1.2A Ta=25℃ -6 -4 -2 0 0 1 2 3 4 5 6 7 8 9 10 Tatal gate charge Q g (nC) 6 2007-11-01 SSM5G09TU S a fe o p era tin g a rea (MO S FET) - 10 1ms I D max (Pulsed) * 100ms Drain current I D (A) -1 10ms I D max (Continuous) DC operation Ta=25℃ - 0.1 Mounted on FR4 board (25.4 mm ・ 25.4 mm ・ 1.6 t Cu pad: 645 mm2 ) *:Single nonrepetive Pulse Ta ・ 25°C Curves must be derated linealy with increase in temperture. - 0.01 - 0.001 - 0.1 - 10 -1 - 100 Drain-Source current V DS (V) P D - Ta (MO S FET) 600 Mounted on FR4 board (25.4 mm ・ 25.4 mm ・ 1.6 t, Cu Pad: 645 mm2） Drain power dissipation P D (mW) 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (℃) 7 2007-11-01 SSM5G09TU SBD Electrical Characteristics Graph IF – VF (SBD) IR – VR (SBD) 1000 10 (mA) 75 100 85 1 IR IF (mA) 85 Reverse current 75 Ta = 25°C 10 0.1 50 0.01 Ta = 25°C 0 0.2 0.3 0.4 Forward voltage 0.5 VF 0.6 0.001 0 0.7 Pulse measurement 3 6 Reverse voltage (V) 12 9 VR (V) CT – VR (SBD) 3000 f = 1 MHz Ta = 25°C 1000 (pF) 0.1 CT 1 0 Capacitance Forward current 50 100 10 1 0.01 0.1 1 Reverse voltage 8 10 VR 100 (V) 2007-11-01 SSM5G09TU Transient thermal impedance Graph Transient thermal impedance rth (°C/W ) rth – tw (MOSFET) 1000 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 10 1 0.001 0.01 0.1 1 Transient thermal impedance rth (°C/W) Pulse width 10 tw 100 1000 (s) rth – tw (SBD) 1000 100 10 1 0.001 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 0.01 1 0.1 Pulse width 9 10 tw 100 1000 (s) 2007-11-01 SSM5G09TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-11-01