SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Unit: mm Unit: mm Ron = 110 mΩ (max) (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V) Ron = 56 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VDS 20 V VGSS ± 12 V ID IDP 3.5 7.0 A PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain-Source voltage Gate-Source voltage DC Pulse Drain current Drain power dissipation Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Symbol Test Condition Min Typ. Max V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = −12 V 12 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V S Gate threshold voltage Forward transfer admittance Drain-Source ON-resistance ⏐Yfs⏐ RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time Turn-on time ton Turn-off time toff Drain-Source forward voltage VDSF VDS = 3 V, ID = 2.0 A (Note 2) 6 10 ⎯ ID = 2.0 A, VGS = 4.0 V (Note 2) ⎯ 44 56 ID = 1.0 A, VGS = 2.5 V (Note 2) ⎯ 53 74 ID = 0.5 A, VGS = 1.8 V (Note 2) VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, IDS= 3.5 A VGS = 4 V VDD = 10 V, ID = 2 A, VGS = 0~2.5 V, RG = 4.7 Ω ID = −3.5 A, VGS = 0 V (Note 2) ⎯ 70 110 ⎯ 320 ⎯ ⎯ 62 ⎯ ⎯ 51 ⎯ ⎯ 4.8 ⎯ ⎯ 3.3 ⎯ ⎯ 1.5 ⎯ ⎯ 18 ⎯ ⎯ 14 ⎯ ⎯ −0.85 −1.2 mΩ pF nC ns V Note 2: Pulse test 1 2007-11-01 SSM3K301T Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 μs VDD = 10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking VDD (c) VOUT VDD 10% VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 3 3 KK4 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM3K301T ID - VDS 6 10 1.8 4.0 2.5 1 Drain Current ID (A) Drain Current ID (A) 5 1.5 4 3 2 VGS = 1.2 V 1 25 °C 0.01 -25 °C Common Source VDS = 3 V 0.0001 0 0.2 0.4 0.6 0.8 Drain-Source Voltage VDS (V) 1 0 RDS(ON) - VGS 200 Drain-Source ON-Resistance RDS(ON) (mΩ) 160 140 120 100 1A 80 60 ID = 0.5 A 40 1 Gate-Source Voltage VGS (V) 2A 20 0 120 2 RDS(ON) - Ta 140 Common Source Ta = 25 °C 180 Drain-Source ON-Resistance RDS(ON) (mΩ) Ta = 85 °C 0.1 0.001 Common Source Ta = 25 °C 0 Common Source 100 1.8 V , 0.5 A 80 2.5 V , 1 A 60 VGS = 4 V , ID = 2 A 40 20 0 0 1 2 3 4 5 6 7 8 Gate-Source Voltage VGS (V) 9 10 -60 -40 -20 0 Vth - Ta 1 Common Source ID = 1 mA VDS = 3 V Gate Threshold Voltage Vth (V) 120 100 80 1.8 V 60 2.5 V VGS = 4 V 40 Common Source Ta = 25 °C 20 0 0 1 2 3 4 20 40 60 80 100 120 140 160 Ambient Temperature Ta (℃) RDS(ON) - ID 140 Drain-Source ON-Resistance RDS(ON) (mΩ) ID - VGS 10 5 0.8 0.6 0.4 0.2 0 6 -60 -40 -20 Drain Current ID (A) 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta (°C) 3 2007-11-01 SSM3K301T |Yfs| - ID -25 °C 25 °C |Yfs| (S) IDR - VDS 10 Drain Reverse Current IDR (A) 10.0 Ta = 85 °C 1.0 Common Source VDS = 3 V Ta = 25 °C 0.1 Common Source VGS = 0 V Ta = 25 °C 1 D G IDR 0.1 S Ta = 85 °C 0.01 1 10 0 C - VDS 1000 -0.2 -0.4 -0.6 -0.8 Drain-Source Voltage VDS (V) Switching Time t (ns) Coss Crss Common Source VGS = 0 V f = 1 MHz Ta = 25 °C 100 tf 10 ton tr 10 0.1 1 10 1 0.01 100 0.1 1 Drain Current ID (A) Drain-Source Voltage VDS (V) Dynamic Input PD -Characteristic Ta ID = 3.5A bTa = 25°C 8008 VGS (V) Common Source 1000 a: Mounted on an FR4 board (25.4 mm x 25.4 mm x 1.6 mm) Cu Pad: 25.4 mm x 25.4 mm) b: Mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm) Cu Pad: 25.4 mm x 25.4 mm 6006 a 4004 VDD=10V VDD=16V 200 2 00 00 460 10 Rth - tw Transient Thermal Impedance Rth (°C/W) 100010 Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C toff 100 -1 t - ID 1000 Ciss Gate–Source voltage -25 °C 0.1 Drain Current ID (A) Capacitance C (pF) 25 °C 0.001 0.01 Drain Power Dissipation PD (mW) Forward Transfer Admittance 100.0 1008 20 40 80 120 140 Ambient Temperature Ta (°C) Total Gate Charge Qg (nC) c 4 Single pulse a: Mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm) Cu Pad: 25.4 mm x 25.4 mm) b: Mounted on an FR4 board (25.4 mm x 25.4 mm x 1.6 mm) Cu Pad: 25.4 mm x 25.4 mm) c: Mounted on an FR4 board (25.4 mm x 25.4 mm x 1.6 mm) Cu Pad: 0.45 mm x 0.8 mm x 3 10 1 0.001 12 160 b a 100 0.01 0.1 1 10 Pulse Width tw (S) 100 1000 2007-11-01 SSM3K301T rth – tw PD – Ta Drain power dissipation PD (mW) Transient thermal impedance Rth (°C/W) 1000 b 100 a Single Pulse 10 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 0.8 mm2×3) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 800 a 600 400 b 200 0 -40 1000 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , 2 Cu Pad : 0.8 mm ×3) -20 0 20 40 60 80 Ambient temperature (s) 5 100 120 140 160 Ta (°C) 2007-11-01 SSM3K301T RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01