TOSHIBA SSM6J08FU_07

SSM6J08FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM6J08FU
Power Management Switch
DC-DC Converter
Unit: mm
•
Small Package
•
Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V)
: Ron = 0.26 Ω (max) (@VGS = −2.5 V)
•
Low Gate Threshold Voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−20
V
Gate-Source voltage
VGSS
±12
V
ID
−1.3
IDP (Note 2)
−2.6
PD (Note 1)
300
mW
DC
Drain current
Pulse
Drain power dissipation
A
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
JEDEC
―
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2J1D
reliability significantly even if the operating conditions (i.e.
Weight: 6.8 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note:
Note 1: Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Fig: 1.
Note 2: The pulse width limited by max channel temperature.
Marking
6
Equivalent Circuit
5
4
6
5
Fig 1: 25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.32 mm2 × 6
4
0.8 mm
0.4 mm
KDD
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
SSM6J08FU
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Gate leakage current
IGSS
Drain-Source breakdown voltage
Drain Cut-off current
Forward transfer admittance
Drain-Source ON resistance
VGS = ±12 V, VDS = 0
Min
Typ.
Max
Unit
⎯
⎯
±1
μA
V (BR) DSS
ID = −1 mA, VGS = 0
−20
⎯
⎯
V (BR) DSX
ID = −1 mA, VGS = 12 V
−8
⎯
⎯
IDSS
Gate threshold voltage
Test Condition
VDS = −20 V, VGS = 0
⎯
⎯
−1
μA
−0.5
⎯
−1.1
V
(Note 3)
1.3
2.7
⎯
S
ID = −0.65 A, VGS = −4 V
(Note 3)
⎯
140
180
ID = −0.65 A, VGS = −2.5 V
(Note 3)
⎯
200
260
ID = −0.65 A, VGS = −2.0 V
(Note 3)
⎯
260
460
Vth
VDS = −3 V, ID = −0.1 mA
⏐Yfs⏐
VDS = −3 V, ID = −0.65 A
RDS (ON)
V
mΩ
Input capacitance
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
370
⎯
pF
Reverse transfer capacitance
Crss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
73
⎯
pF
Output capacitance
Coss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
116
⎯
pF
Switching time
Turn-on time
ton
VDD = −10 V, ID = −0.65 A,
⎯
33
⎯
ns
Turn-off time
toff
VGS = 0~−2.5 V, RG = 4.7 Ω
⎯
47
⎯
ns
Note 3: Pulse test
Switching Time Test Circuit
(a) Test circuit
ID
0
(b) VIN
0V
OUT
IN
−2.5 V
90%
−2.5 V
RG
10 μs
10%
VDD
(c) VOUT
VDD = −10 V
RG = 4.7 Ω
< 1%
D.U. =
VIN: tr, tf < 5 ns
COMMON SOURCE
Ta = 25°C
VDS (ON)
VDD
90%
10%
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA
for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off)
requires lower voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
2
2007-11-01
SSM6J08FU
ID – VDS
ID – VGS
−3.0
−10000
Common Source
−2.5
−4.0
(A)
−2.5
Drain current ID
Common Source
Ta = 25°C
−2.0
−1000
Drain current ID (mA)
−10
−2.0
−1.8
−1.5
−1.0
−1.6
−0.5
−0.5
−1.0
−1.5
Drain-Source voltage
100°C
−100
Ta = 25°C
−10
−25°C
−1
−0.1
VGS = −1.4 V
0
0
VDS = −3 V
−0.01
0
−2.0
VDS (V)
−0.5
−1.0
−1.5
Gate-Source voltage
RDS (ON) – ID
−2.0
VGS (V)
RDS (ON) – VGS
1.0
1.0
Common Source
Common Source
Ta = 25°C
0.8
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
−2.5
0.6
VGS = −2 V
0.4
−2.5
0.2
ID = −0.65 A
0.8
Ta = 25°C
0.6
0.4
0.2
−4
0
0
−0.5
−1.0
−1.5
−2.0
−2.5
0
0
−3.0
Drain current ID (A)
−2
−4
−6
Gate-Source voltage
−8
−10
−12
VGS (V)
|Yfs| – ID
10
RDS (ON) – Ta
0.5
Common Source
Forward transfer admittance
|Yfs| (S)
Drain-Source on resistance
RDS (ON) (Ω)
ID = −0.65 A
0.4
VGS = −2 V
0.3
−2.5
0.2
−4
1
0.1
Common Source
0.1
VDS = −3 V
Ta = 25°C
0
−25
0
25
50
75
100
125
0.01
−0.01
150
Ambient temperature Ta (°C)
−0.1
−1
−10
Drain current ID (A)
3
2007-11-01
SSM6J08FU
Vth – Ta
C – VDS
−1.0
600
Common Source
VDS = −3 V
−0.8
VGS = 0
500
f = 1 MHz
(pF)
ID = −0.1 mA
−0.6
Capacitance C
Gate threshold voltage
Vth (V)
Common Source
−0.4
−0.2
Ta = 25°C
400
Ciss
300
200
Coss
100
Crss
0
−25
0
25
50
75
100
125
0
0
150
−4
Ambient temperature Ta (°C)
−8
−12
Drain-Source voltage
t – ID
−16
−20
VDS (V)
IDR – VDS
−2.0
1000
Drain reverse current IDR (A)
Switching time t (ns)
Common Source
100
toff
tf
ton
tr
10
Common Source
VDD = −10 V
VGS = 0
D
Ta = 25°C
−1.5
IDR
G
S
−1.0
−0.5
VGS = 0~−2.5 V
Ta = 25°C
0
0
RG = 4.7 Ω
1
−0.01
−0.1
−1
0.5
Drain-Source voltage
−10
1
VDS
(V)
Drain current ID (A)
Safe operating area
−10
Dynamic Input Characteristic
Mounted on FR4 board
(25.4 mm × 25.4 mm ×1.6 t
2
Cu pad: 0.32 mm × 6) Fig: 1
−10
ID = −1.3 A
Ta = 25°C
(A)
−8
ID max (pulsed)
−10 V
VDD = −16 V
Drain current ID
Gate-Source voltage
VGS (V)
Common Source
−6
−4
−2
0
0
2
4
6
ID max (continuous)
−1
DC operation
Ta = 25°C
−0.1
*: Single nonrepetitive
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.01
−0.1
8
Total gate charge Qg (nC)
10 ms*
100 ms*
−1
Drain-Source voltage
4
VDSS max
−10
−100
VDS (V)
2007-11-01
SSM6J08FU
rth – tw
Transient thermal impedance rth (°C /W)
1000
100
Single pulse
10
Mounted on FR4 board (25.4 mm
× 25.4 mm × 1.6 t,
2
Cu pad: 0.32 mm × 6)
Fig: 1
1
0.001
0.01
0.1
1
Pulse width
10
100
1000
tw (s)
PD – Ta
350
Drain power dissipation PD (mW)
Mounted on FR4 board
300
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu pad: 0.32 mm × 6)
250
Fig: 1
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
5
2007-11-01
SSM6J08FU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01