VISHAY ILD213T

ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Optocoupler, Phototransistor Output, Dual Channel, SOIC-8
package
Features
•
•
•
•
Two Channel Coupler
SOIC-8A Surface Mountable Package
Standard Lead Spacing of .05 "
Available only on Tape and Reel Option (Conforms to EIA Standard 481-2)
• Isolation Test Voltage, 3000 VRMS
• Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code Y
Description
The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are
optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical isolation between input and output. The
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a
standard SOIC-8A small outline package for surface
mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package
conforms to standards for surface mounted devices.
Document Number 83647
Rev. 1.4, 26-Oct-04
A1
8C
C2
7E
A3
6C
C4
5E
e3
i179018
Pb
Pb-free
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher
safety margin compared to the industry standard of
30 V.
Order Information
Part
ILD205T
Remarks
CTR 40 - 80 %, SOIC-8
ILD206T
CTR 63 - 125 %, SOIC-8
ILD207T
CTR 100 - 200 %, SOIC-8
ILD211T
CTR > 20 %, SOIC-8
ILD213T
CTR > 100 %, SOIC-8
ILD217T
CTR > 100 %, SOIC-8
For additional information on the available options refer to
Option Information.
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1
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
VR
6.0
V
1.0
A
30
mA
50
mW
0.66
mW/°C
Peak reverse voltage
Peak pulsed current
1.0 µs, 300 pps
Continuous forward current per
channel
Power dissipation
Pdiss
Derate linearly from 25 °C
Unit
Output
Symbol
Value
Unit
Collector-emitter breakdown voltage
Parameter
Test condition
BVCEO
70
V
Emitter-collector breakdown voltage
BVECO
7.0
V
Power dissipation per channel
Pdiss
125
mW
1.67
mW/°C
Symbol
Value
Unit
Ptot
300
mW
4.0
mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Soldering time from 260 °C
Tsld
10
sec.
Derate linearly from 25 °C
Coupler
Parameter
Test condition
Total package dissipation
ambient (2 LEDs + 2 detectors,
2 channels)
Derate linearly from 25 °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 10 mA
VF
1.2
1.55
V
Reverse current
VR = 6.0 V
IR
0.1
100
µA
Capacitance
VR = 0
CO
25
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2
Test condition
Symbol
Min
Unit
pF
Document Number 83647
Rev. 1.4, 26-Oct-04
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Output
Symbol
Min
Collector-emitter breakdown
voltage
Parameter
IC = 10 µA
Test condition
BVCEO
70
Typ.
Max
Unit
V
Emitter-collector breakdown
voltage
IE = 10 µA
BVECO
7.0
V
Collector-emitter leakage
current
VCE = 10 V, IF = 0
ICEO
5.0
Collector-emitter capacitance
VCE = 0
CCE
10
50
nA
pF
Coupler
Parameter
Collector-emitter saturation
voltage
Test condition
IF = 10 mA, IC = 2.5 mA
Capacitance (input-output)
Isolation test voltage
Symbol
Min
Typ.
VCE(sat)
t = 1.0 sec.
VISO
Unit
0.4
V
0.5
CIO
Resistance, input to output
Max
pF
3000
VRMS
RIO
100
GΩ
Current Transfer Ratio
Parameter
DC Current Transfer Ratio
Test condition
VCE = 5.0 V, IF = 10 mA
VCE = 5.0 V, IF = 1.0 mA
Document Number 83647
Rev. 1.4, 26-Oct-04
Part
Symbol
Min
Max
Unit
ILD205T
CTRDC
40
Typ.
80
%
ILD206T
CTRDC
63
125
%
ILD207T
CTRDC
100
200
%
ILD211T
CTRDC
20
ILD213T
CTRDC
100
ILD205T
CTRDC
13
30
%
ILD206T
CTRDC
22
45
%
ILD207T
CTRDC
34
70
%
ILD217T
CTRDC
100
120
%
%
%
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ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Switching Characteristics
Symbol
Min
Turn-on time
Parameter
IC = 2.0 mA, RL = 100 Ω,
VCC = 5.0 V
Test condition
ton
5.0
Typ.
Max
Unit
µs
Turn-off time
IC = 2.0 mA, RL = 100 Ω,
VCC = 5.0 V
toff
4.0
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
If - LED Current (ma)
NCTRce - Normalized CTRce
1.2
CTR normalized @
IF = 10 mA
1.0
0.8
V CE=5 V
0.6
0.4
V CE=0.4 V
0.2
0.0
.01
Vf - LED Forward Voltage (V)
iild205t_01
Figure 3. Normalized CTRce vs. Forward Current
1.2
Coll current normalized @ IF=10 mA
VCE=10 V
IF=10 mA
NCTRce - normalized CTRce
NIc Normalized Collector Current
1.2
1.0
100
iild205t_03
Figure 1. Forward Current vs. Forward Voltage
0.8
0.6
IF =5 mA
0.4
0.2
IF =1 mA
CTR nonsat normalized @
IF=10 mA
VCE=10 V
1.0
IF=10 mA
0.8
0.6
IF=5 mA
0.4
0.2
IF=1 mA
0.0
0.0
0
2
4
6
8
10
VCE-Collector to Emitter Voltage (V)
12
20
40
60
80
100
TA - Temperature (°C)
iild205t_04
iild205t_02
Figure 2. Collector-Emitter Current vs. Temperature
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4
.1
1
10
IF - LED Current - (mA)
Figure 4. Current Transfer Ratio (normalized) vs. Ambient
Temperature
Document Number 83647
Rev. 1.4, 26-Oct-04
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
IF=10 mA
Pulse width=100 ms
Duty cycle=50%
Package Power Dissipation (mw)
Switching speed (µs)
10 3
Toff
10 2
To n
10 1
10 0
.1
1
10
200
Total pkg
150
100
50
per channel
0
25
100
50
75
100
125
TA - Ambient Temperature (°C)
Rl - Load Resistor (KΩ) ˇ
iild205t_01
iild205t_07
Figure 7. Power Dissipation vs. Ambient Temperature
Iceo-Leakage Current - (µa)
Figure 5. Switching Speed vs. Load Resistor
Vce=50 V
Vce=50 V
Ta - Temperature (°C)
iild205t_06
Figure 6. Collector Current vs. Ambient Temperature
Input
toff
ton
VCC=5 V
Input
RL
VOUT
tpdoff
tpdon
Output
td
tr
ts
tr
10%
10%
50%
50%
90%
90%
iild205t_08
Figure 8. Switching Test Circuit
Document Number 83647
Rev. 1.4, 26-Oct-04
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5
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Package Dimensions in Inches (mm)
.120±.002
(3.05±.05)
R .010 (.13)
CL .154±.002
(3.91±.05)
.240
(6.10)
.050 (1.27)
.014 (.36)
.036 (.91)
.170 (4.32)
.260 (6.6)
.016 (.41)
Pin One I.D.
.230±.002
(5.84±.05)
.045 (1.14)
7°
.015±.002
(.38±.05)
40°
.0585±.002
(1.49±.05)
ISO Method A
.004 (.10)
.008 (.20)
.008 (.20)
.050(1.27) Typ.
.040 (1.02)
i178020
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.020±.004
(.51±.10)
2 Plcs.
5° Max.
R.010
(.25) Max.
.125±.002
(3.18±.05)
Lead coplanarity
±.001 Max.
Document Number 83647
Rev. 1.4, 26-Oct-04
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83647
Rev. 1.4, 26-Oct-04
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