VISHAY SFH618A

SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current
Features
• Good CTR Linearity Depending on
Forward Current
• Low CTR Degradation
• High Collector-emitter Voltage, V CEO = 55 V
• Isolation Test Voltage, 5300 V RMS
• Low Coupling Capacitance
• End-Stackable, 0.100 " (2.54 mm) Spacing
• High Common-mode Interference Immunity
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Telecom
Industrial Controls
Battery Powered Equipment
Office Machines
Description
The SFH618A (DIP) and SFH6186 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
Document Number 83673
Rev. 1.5, 20-Apr-04
1
A 1
4 C
C 2
3 E
1
i179061
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 VRMS or DC.
Order Information
Part
Remarks
SFH618A-2
CTR 63 - 125 %, DIP-4
SFH618A-3
CTR 100 - 200 %, DIP-4
SFH618A-4
CTR 160 - 320 %, DIP-4
SFH618A-5
CTR 250 - 500 %, DIP-4
SFH6186-2
CTR 63 - 125 %, SMD-4
SFH6186-3
CTR 100 - 200 %, SMD-4
SFH6186-4
CTR 160 - 320 %, SMD-4
SFH6186-5
CTR 250 - 500 %, SMD-4
SFH618A-3X006
CTR 100 - 200 %, DIP-4 400 mil (option 6)
SFH618A-3X007
CTR 100 - 200 %, SMD-4 (option 7)
SFH618A-4X006
CTR 160 - 320 %, DIP-4 400 mil (option 6)
SFH618A-5X006
CTR 250 - 500 %, DIP-4 400 mil (option 6)
SFH618A-5X007
CTR 250 - 500 %, SMD-4 (option 7)
For additional information on the available options refer to
Option Information.
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1
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Reverse voltage
Power dissipation
Symbol
Value
VR
6.0
Unit
V
Pdiss
70
mW
Output
Symbol
Value
Unit
Collector-emitter voltage
Parameter
Test condition
VCE
55
V
Emitter-collector voltage
VEC
7.0
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
Symbol
Value
Unit
VISO
5300
VRMS
Creepage distance
≥ 7.0
mm
Clearance
≥ 7.0
mm
Insulation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
175
Collector current
tp ≤ 1.0 ms
Power dissipation
Coupler
Parameter
Test condition
Isolation test voltage between
emitter and detector, refer to
Climate DIN 40046, part2,
Nov.74
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
11
Ω
≥ 10
Storage temperature range
Tstg
- 55 to +150
°C
Ambient temperature range
Tamb
- 55 to +100
°C
Tj
100
°C
Tsld
260
°C
Junction temperature
Soldering temperature
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2
max. 10 s. Dip Soldering
distance to seating plane
≥ 1.5 mm
Document Number 83673
Rev. 1.5, 20-Apr-04
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
Ptot –Power Dissipation (mW)
200
150
Phototransistor
100
50
Diode
0
0
25
50
75
100
125
Tamb – Ambient Temperature ( qC )
18485
150
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 5.0 mA
Test condition
VF
1.1
1.5
V
Reverse current
VR = 6.0 V
IR
.01
10
µA
Capacitance
VR = 0 V, f = 1.0 MHz
Thermal resistance
Symbol
Min
Unit
CO
25
pF
Rthja
1070
K/W
Output
Parameter
Test condition
Collector-emitter leakage
current
VCE = 10 V
Collector-emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
Thermal resistance
Symbol
Min
ICEO
Typ.
Max
Unit
10
200
nA
CCE
7
pF
Rthja
500
K/W
Coupler
Parameter
Collector-emitter saturation
voltage
Coupling capacitance
Document Number 83673
Rev. 1.5, 20-Apr-04
Part
Symbol
Typ.
Max
Unit
IC = 0.32 mA, IF = 1.0 mA
Test condition
SFH618A-2
SFH6186-2
VCEsat
Min
0.25
0.4
V
IC = 0.5 mA, IF = 1.0 mA
SFH618A-3
SFH6186-3
VCEsat
0.25
0.4
V
IC = 1.25 mA, IF = 1.0 mA
SFH618A-4
SFH6186-4
VCEsat
0.25
0.4
V
IC = 0.8 mA, IF = 1.0 mA
SFH618A-5
SFH6186-5
VCEsat
0.25
0.4
V
CC
0.25
pF
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3
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Current Transfer Ratio
Parameter
Test condition
IC/IF
Part
Symbol
Min
IF = 1.0 mA, VCE = 0.5 V
SFH618A-2
SFH6186-2
CTR
63
IF = 0.5 mA, VCE = 1.5 V
SFH618A-2
SFH6186-2
CTR
32
IF = 1.0 mA, VCE = 0.5 V
SFH618A-3
SFH6186-3
CTR
100
IF = 0.5 mA, VCE = 1.5 V
SFH618A-3
SFH6186-3
CTR
50
IF = 1.0 mA, VCE = 0.5 V
SFH618A-4
SFH6186-4
CTR
160
IF = 0.5 mA, VCE = 1.5 V
SFH618A-4
SFH6186-4
CTR
80
IF = 1.0 mA, VCE = 0.5 V
SFH618A-5
SFH6186-5
CTR
250
IF = 0.5 mA, VCE = 1.5 V
SFH618A-5
SFH6186-5
CTR
125
Typ.
Max
Unit
125
%
75
%
200
120
%
%
320
200
%
%
500
300
%
%
Switching Characteristics
Typical
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Turn-on time
VCC = 5.0 V, IC = 2.0 mA,
RL = 100 Ω
ton
6.0
µs
Rise time
VCC = 5.0 V, IC = 2.0 mA,
RL = 100 Ω
tr
3.5
µs
Turn-off time
VCC = 5.0 V, IC = 2.0 mA,
RL = 100 Ω
toff
5.5
µs
Fall time
VCC = 5.0 V, IC = 2.0 mA,
RL = 100 Ω
tf
5.0
µs
VCC = 5 V
Input Pulse
INPUT
RL
VOUT
10%
Output Pulse
90%
tr
ton
tf
t off
isfh618a_10
isfh618a_12
Figure 2. Test Circuit
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4
Figure 3. Test Circuit and Waveforms
Document Number 83673
Rev. 1.5, 20-Apr-04
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
VCE = 0.5 V, CTR = f (TA)
IF = 1.0 mA, VF = f (TA)
isfh618a_01
isfh618a_04
Figure 4. Current Transfer Ratio (typ.)
Figure 7. Diode Forward Voltage (typ.)
VCE = 0.5 V, CTR = f (TA)
TA = 25°C, f = 1.0 MHz,
CEE = f (VCE)
isfh618a_01
isfh618a_02
isfh618a_05
Figure 5. Current Transfer Ratio (typ.)
Figure 8. Transistor Capacitance
TA = 25°C,
CE = f
(VCE, IF)
TA = 25°C, VF = f (IF)
isfh618a_03
isfh618a_06
Figure 6. Diode Forward Voltage (typ.)
Document Number 83673
Rev. 1.5, 20-Apr-04
Figure 9. Output Characteristics
www.vishay.com
5
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
IF = f (TA)
TA = 25°C, IF = 1.0 mA,
VCC = 5.0 V, tON, tR,
tOFF, tF, = f (RL)
isfh618a_09
isfh618a_07
Figure 10. Permissible Forward Current Diode
Figure 11. Switching times (typ.)
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.130 (3.30)
.150 (3.81)
4°
typ.
i178027
www.vishay.com
6
.018 (.46)
.022 (.56)
10°
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
3°–9°
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
.008 (.20)
.012 (.30)
Document Number 83673
Rev. 1.5, 20-Apr-04
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
SMD
pin one ID
.030 (.76)
.100 (2.54)
R .010 (.25)
.070 (1.78)
.255 (6.48)
.268 (6.81)
.315 (8.00) min
.435 (11.05)
3
4
.375 (9.52)
.305 (10.03)
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.060 (1.52)
.296 (7.52)
.312 (7.90)
10°
.031 (.79)
typ.
.010 (.25)
typ.
.130 (3.30)
.150 (3.81)
ISO Method A
i178029
4° typ.
1.00 (2.54)typ.
.050 (1.27)
typ.
.315 (8.00)
min.
.020 (.508)
.040 (1.02)
.0098 (.249)
.035 (.102)
Lead
coplanarity
.004 max.
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
.028 (0.7)
MIN.
3°–7°
.180 (4.6)
.160 (4.1)
.315 (8.0)
MIN.
18487
Document Number 83673
Rev. 1.5, 20-Apr-04
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.331 (8.4)
MIN.
.406 (10.3)
MAX.
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7
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83673
Rev. 1.5, 20-Apr-04