VISHAY TEMD5120X01

TEMD5120X01
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant, Released for Lead
(Pb)-free Solder Process, AEC-Q101 Released
Description
TEMD5120X01 is a high speed and high sensitive
PIN photodiode. It is a miniature Surface Mount
Device (SMD) including the chip with a 4.4 mm2
sensitive area and an infrared bandpass filter
matched to IR Emitters operating at wavelength
870 nm or 950 nm.
20535
Features
Applications
• Product designed and qualified acc.
AEC-Q101 for the automotive market
• Radiant sensitive area: A = 4.4 mm2
e4
• Wide angle of half sensitivity ϕ = ± 65°
• High photo sensitivity
• Fast response times
• Small junction capacitance
• Plastic package with IR filter: λ = 870...950 nm
• Floor life: 72 h, MSL 4, acc. J-STD-20
• Lead (Pb)-free component
• Component in accordance to ELV 2000/53/EC,
RoHS 2002/95/EC and WEEE 2002/96/EC
• Automotive sensors
• Infrared detectors
• High speed photo detectors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Symbol
Value
VR
60
Unit
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Soldering temperature
Thermal resistance junction/
ambient
Document Number 84680
Rev. 1.3, 07-May-07
In accordance with fig. 8
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TEMD5120X01
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 50 mA
Breakdown voltage
IR = 100 µA, E = 0
Symbol
Min
VF
V(BR)
Typ.
Max
Unit
1
1.3
V
60
V
Reverse dark current
VR = 10 V, E = 0
Iro
2
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
48
30
nA
pF
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm , λ = 950 nm
TKVo
-2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
32
µA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
35
µA
2
25
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
940
nm
λ0.5
790 to 1050
nm
Range of spectral bandwidth
Noise equivalent power
VR = 10 V, λ = 950 nm
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
NEP
4 x 10
W/√ Hz
-14
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
2
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Figure 1. Reverse Dark Current vs. Ambient Temperature
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1.4
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
Document Number 84680
Rev. 1.3, 07-May-07
TEMD5120X01
Vishay Semiconductors
100
10
1
VR = 5 V
λ = 950 nm
0.1
0.01
0.6
0.4
0.2
0.0
750
850
950
1050
1150
λ - Wavelength (nm)
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
λ = 950 nm
2
1 mW/cm
Srel - Relative Sensitivity
Ira - Reverse Light Current (µA)
0.8
94 8426
Figure 3. Reverse Light Current vs. Irradiance
100
1.0
10
0.1
1
Ee - Irradiance (mW/cm 2 )
94 8421
1.2
S(λ)rel - Relative Spectral Sensivity
Ira - Reverse Light Current (µA)
1000
0.5 mW/cm2
10
0.2 mW/cm2
2
0.1 mW/cm
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
1
0.1
1
10
100
V R - Reverse Voltage (V)
94 8422
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8406
Figure 4. Reverse Light Current vs. Reverse Voltage
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
94 8423
1
10
100
V R - Reverse Voltage (V)
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 84680
Rev. 1.3, 07-May-07
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TEMD5120X01
Vishay Semiconductors
Package Dimensions in millimeters
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Drawing-No.: 6.541-5059.01-4
Issue: 4; 26.04.07
Not indicated tolerances ± 0.1
19280
Minimum order quantity (MOQ): 1500 pcs (1 reel)
Document Number 84680
Rev. 1.3, 07-May-07
TEMD5120X01
Vishay Semiconductors
Taping Dimensions in millimeters
20537
Document Number 84680
Rev. 1.3, 07-May-07
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TEMD5120X01
Vishay Semiconductors
Reflow Solder Profiles
Temperature (°C)
Preheat
280
260
240
220
200
180
160
140
120
100
Drypack
Reflow
260 °C
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a
desiccant.
Cooling
250 °C
210 °C
Floor Life
145 °C
125 °C
~ 20 s
80
60
40
20
0
~ 30 s
~ 40 s
120 s
0
30
60
90
120
150
180
210
240
270
300
Time (s)
19030
Drying
Figure 8. Lead (Pb)-free (Sn) Reflow Solder Profile
948625
300
max. 240 °C
10 s
ca. 230 °C
250
Temperature (°C)
Floor life (time between soldering and removing from
MBB) must not exceed the time indicated in
J-STD-020. TEMD5110 is released for:
Moisture Sensitivity Level 4, according to
JEDEC, J-STD-020
Floor Life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
Label. Devices taped on reel dry using recommended
conditions 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h
at 60 °C (+ 5 °C), RH < 5 %.
200
215 °C
150
max 40s
max. 160 °C
100
90 s - 120 s
Lead Temperature
50
full line: typical
dotted: process limits
2 K/s - 4 K/s
0
0
50
100
150
200
250
Time (s)
Figure 9. Lead Tin (SnPb) Reflow Solder Profile
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Document Number 84680
Rev. 1.3, 07-May-07
TEMD5120X01
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84680
Rev. 1.3, 07-May-07
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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