TOSHIBA HN1K04FU

HN1K04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K04FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
·
High input impedance and extremely low drive current.
·
Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.8 to 2.5 V
·
Switching speed is fast.
·
Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
50
V
Gate-source voltage
VGSS
10
V
ID
50
mA
200
mW
DC drain current
Drain power dissipation
PD (Note)
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Note: TOTAL rating
―
JEITA
―
TOSHIBA
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
JEDEC
Symbol
Test Condition
2-2J1C
Weight: 6.8 mg
Min
Typ.
Max
Unit
IGSS
VGS = 10 V, VDS = 0 V
¾
¾
1
mA
V (BR) DSS
ID = 100 mA, VGS = 0 V
50
¾
¾
V
IDSS
VDS = 50V, VGS = 0 V
¾
¾
1
mA
Vth
VDS = 5V, ID = 0.1 mA
0.8
¾
2.5
V
Forward transfer admittance
ïYfsï
VDS = 5V, ID = 10 mA
20
¾
¾
mS
Drain-source ON resistance
RDS (ON)
ID = 10 mA, VGS = 4.0 V
¾
20
50
W
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Input capacitance
Ciss
VDS = 5 V, VGS=0 V, f = 1 MHz
¾
6.3
¾
pF
Reverse transfer capacitance
Crss
VDS = 5 V, VGS=0 V, f = 1 MHz
¾
1.3
¾
pF
Output capacitance
Coss
pF
VDS = 5 V, VGS=0 V, f = 1 MHz
¾
5.7
¾
ton
VDD = 5 V, ID = 10 mA,
VGS = 0 to 4.0 V
¾
0.11
¾
toff
VDD = 5 V, ID = 10 mA,
VGS = 0 to 4.0 V
¾
0.15
¾
Switching time
1
ms
2002-01-16
HN1K04FU
Equivalent Circuit (top view)
6
5
Marking
4
6
Q1
2
4
KH
Q2
1
5
1
3
2
3
(Q1, Q2 common)
Switching Time Test Circuit
(a) Test circuit
(b) VIN
ID
4V
10 ms
VIN
OUT
RL
50 W
IN
VGS
VDD
VDD = 5 V
D.U. <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 W)
Common Source
Ta = 25°C
4V
0
90%
10%
VDD
10%
(c) VOUT
VDS
90%
VDS (ON)
tr
ton
2
tf
toff
2002-01-16
HN1K04FU
(Q1, Q2 common)
ID – VDS
60
Ta = 25°C
2.7
40
Drain current ID
1.0
(mA)
50
3.0
30
2.4
20
VGS = 2.1 V
0
1.65
0.6
VGS = 1.6 V
0.4
1.55
2
4
6
8
10
0
0
12
50
30
VGS = 0
5
(mA)
Ta = 25°C
G
Drain current ID
D
3
IDR
1
S
0.5
0.3
0.2
0.3
0.4
0.1
0.05
0.03
-0.2
-0.4 -0.6 -0.8
-1.0 -1.2
-1.4
-1.6
Ta = 100°C
Common source
VDS = 5 V
5
3
1
0.5
0.3
25
-25
0.1
0.05
(V)
1
2
3
4
5
6
7
Drain-source voltage VGS
ïYfsï – ID
8
9
(V)
C – VDS
100
Common
Common source
source
50
VDS = 5 V
Ta = 25°C
VGS = 0
30
f = 1 MHz
Capacitance C (pF)
Forward transfer admittance
ïYfsï (mS)
(V)
ID – VGS
10
0.01
0
-1.8
100
30
10
Ta = 25°C
10
Ciss
5
3
Coss
1
5
Crss
0.5
3
0.5
0.6
0.03
Drain-source voltage VDS
50
0.5
Drain-source voltage VDS
Common source
10
0.1
(V)
IDR – VDS
50
30
1.5
1.5
Drain-source voltage VDS
(mA)
Ta = 25°C
0.2
1.8
Drain reverse current IDR
1.7
0.8
10
0.01
0
Common source
4.0
2.0
1.8
Drain current ID
(mA)
Common source
4.0
ID – VDS (low voltage region)
1.2
1
3
5
10
Drain current ID
30
50
0.3
0.1
100
(mA)
0.3 0.5
1
3
5
10
Drain-source voltage VDS
3
30
50
(V)
2002-01-16
HN1K04FU
(Q1, Q2 common)
VDS (ON) – ID
t – ID
1000
3000
Common
source
300
100
50
30
tf
ton
100
tr
ID VOUT
30 4 V
0
VIN
10 ms
10
5
0.5
toff
300
1
3
10
30
Drain current ID
10
0.3
100
(mA)
VIN
D.U. <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 W)
Common source
VDD = 5 V Ta = 25°C
RL
Ta = 25°C
50 9
(ns)
VGS = 4 V
500
Switching time t
Drain-source on voltage
VDS (ON) (mV)
1000
1
10
Drain current ID
(mA)
50
PD* – Ta
350
Drain power dissipation
PD* (mW)
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
*: TOTAL rating
4
2002-01-16
HN1K04FU
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2002-01-16