SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications · 2.5 V gate drive · High input impedance · Low gate threshold voltage: Vth = 0.7~1.3 V · Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V DC drain current ID 100 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C JEDEC ― JEITA ― TOSHIBA 2-2HA1B Weight: 2.3 mg (typ.) Marking Equivalent Circuit 1 2003-03-27 SSM3K03FE Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 ¾ ¾ 1 mA V (BR) DSS ID = 100 mA, VGS = 0 20 ¾ ¾ V IDSS VDS = 20 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 3 V, ID = 0.1 mA 0.7 ¾ 1.3 V Forward transfer admittance ïYfsï VDS = 3 V, ID = 10 mA 25 50 ¾ mS Drain-source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ¾ 4 12 W Gate threshold voltage Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 11.0 ¾ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 3.3 ¾ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.3 ¾ pF Switching time Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.16 ¾ Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.19 ¾ ms Switching Time Test Circuit (a) Test circuit 2 (b) VIN VGS (c) VOUT VDS 2003-03-27 SSM3K03FE 3 2003-03-27 SSM3K03FE 4 2003-03-27 SSM3K03FE RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2003-03-27