Si4750DY Vishay Siliconix New Product Smart Power High-Side Switch PRODUCT SUMMARY Overvoltage Protection Vbb(AZ) (V) Operating Voltage Vbb(on) (V) On-State Resistance RON (mW) Nominal Load Current IL(nom) (A) 41 5 − 15 50 2.0 FEATURES D D D D D D D Overload Protection Current Limitation Short Circuit Protection Thermal Shutdown with Restart Overvoltage Protection (Including Load Dump) Reverse Battery Protection with External Resistor CMOS Compatible Input D Start A Cold Filament Lamp D ESD Protection D Low Standby Current APPLICATIONS D All Types of Resistive, Inductive and Capacitive Loads D mC Compatible Power Switch for 12-V dc Applications D Replaces Electromechanical Relays and Discrete Circuits DESCRIPTION The Si4750DY is an n-channel verticle power FET with charge pump, ground referenced CMOS compatible input, and fully protected by embedded protection functions. FUNCTIONAL BLOCK DIAGRAM MOSFET Die VBAT VST ESD IN ESD Controller IC Document Number: 72219 S-32411—Rev. B, 24-Nov-03 Voltage Regulator Charge Pump and Gate Drive Controller Overload and Short Circuit Thermal Shutdown with Hysterisis Load Source S Load Sense Diode www.vishay.com 1 Si4750DY Vishay Siliconix New Product PIN CONFIGURATION SO-8 1 8 2 7 3 6 4 5 TRUTH TABLE IN MOSFET H ON L OFF PIN DESCRIPTION Top View Pin Number Ordering Information: Si4750DY—E3 Si4750DY-T1—E3 (with Tape and Reel) Symbol Description 1 IN 2, 3, 4 VBAT Input Logic Signal 5, 6 S 7 GND Ground 8 VST Status Output Pin VBAT/MOSFET Drain, Bypass Cap is Mandatory MOSFET Source ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Supply Voltage Symbol Limit Vbb 15 Unit Vbb(SC) 15 VIN −0.7 to 7.5 Load Current (Short Circuit Current—see page 3) IL Self-Limit A Current Through Input Pin (dc) IIN "1 mA Operating Temperature TA −40 to 150 Storage Temperature Tstg −55 to 150 Power Dissipationa Ptot 1.14 W Inductive Load Switch-Off Energy Dissipation Single Pluse (TA = 25_C) EAS 20 mJ VLOADDUMP 25 V Supply Voltage For Full Short Circuit Protection (TA = −40 to 150_C) Continuous Input Voltage Load Dump Protectionb, c (td = 15 ms, VIN = low or high, Vbb = 14.5 V) Electrostatic Discharge Voltage (Human Body Model)d Input Pin All Other Pins V _C "1.2 VESD kV "5 THERMAL RESISTANCE RATINGS Parameter Symbol Minimum Typical Maximum Junction-to-Ambient RthJA 88 110 Junction-to-Case (Drain)a RthJC 29 36 Unit _C/W Notes a. When Mounted on 1” x 1” PCB FR4 Board. b. Not tested, specified by design. c. VLOADDUMP is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. witha 150-W resistor in GND connection. A resistor for the protection of the input is integrated. d. According to ANSI EOS/ESD-S5.1-1983 ESD STM5.1-1998. www.vishay.com 2 Document Number: 72219 S-32411—Rev. B, 24-Nov-03 Si4750DY Vishay Siliconix New Product SPECIFICATIONS Test Conditions Unless Otherwise Noted Parameter Symbol TA = 25_C, Vbb =14.5 V Min Typ Max Unit 34 50 mW Load Switching Capabilities and Characteristics On-State Resistance rON Nominal Load Current IL = 2 A, Vbb = 9 to 14.5 V IL(nom) 2 Turn-On- Time to 90% VOUT tON 70 150 Turn-Off Time to 10% VOUT toff 60 150 Slew Rate On dV/dton Slew Rate Off −dV/dton IL = 2 A A, CL = 2 mA A 0.22 ms V/ms 0.08 Operating Parameters Operating Voltage Undervoltage Shutdown of Charge Pump Undervoltage Restart of Charge Pump Standby Current Leakage Output Current (Included in Ibb(off)) Vbb(on) Vbb(under) 9 TA = −40 to 85_C Vbb(ucp) Ibb(off) TA = −40 to 85_C, VIN = 0 V IL(off) VIN = 0 V 41 6.7 8 7.1 8 70 0.5 V mA Protection Features Initial Peak Short Circuit Current Limit Thermal Overload Trip Temperature Thermal Hysteresis IL(SCp) L(SC ) TJ THYS tm = 500 ms, TA = 25_C 21 tm = 500 ms, TA = 25_C 19 IL = 2 A A 150 _C 12 Reverse Battery Reverse Batteryb −Vbb Drain-Source Diode Voltage −VON 25 VOUT > Vbb, TJ = 150_C 600 V mV Input Input Turn-On Threshold Voltage VIN(T+) Input Turn-Off Threshold Voltage VIN(T−) Input Threshold Hysteresis DVIN(T) Off-State Input Current On-State Input Current Input Resistance 2.3 See Figure 1 3.0 0.8 V 1 IIN(off) VIN = 0.7 V, See Figure 1 2 IIN(on) VIN = 5 V, See Figure 1 2 RL Input Resistance, See Figure 1 3000 mA kW Notes a. Not to exceed TPULSE = 50 ns. b. Requires a 150-W resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation. Input current has to be limited. (See Maximum Ratings, page 2.) http://www.campw.com/ Document Number: 72219 S-32411—Rev. B, 24-Nov-03 www.vishay.com 3 Si4750DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized rDS(on) vs. Temperature rDS(on) vs. VGS @ 25_C 1.6 1.4 46 1.2 Normalized rDS(on) (Ω) rDS(on) − Drain-Source On-Resistance (MW) 50 42 38 34 1.0 0.8 0.6 0.4 0.2 30 4.5 5.5 6.5 7.5 8.5 9.5 0.0 −50 10.5 −25 0 25 VGS (V) Typical Input Threshold Voltage 150 7 8 250 1.5 IIN (mA) VIN (th) 125 Vbb = 14.5 V IL = 2 A CL = 10 mF 300 2.0 Off 1.0 200 150 100 Vbb = 14.5 V IL = 2 A CL = 10 mF 50 0 −25 0 25 50 75 100 0 1 2 3 4 5 6 VD − Analog Voltage (V) TA (_C) Initial Peak Current Limit Under A 2-A Lamp Load Typical Standby Current 120 100 100 Typical Input Current On 2.5 0.0 −50 75 350 3.0 0.5 50 Temperature (_C) 25 Vbb = 14.5 V VIN = Low IL = 2 A CL = 10 mF 14.5 V Vbb = 14.5 V 20 15 IL (A) Ibb(off) (mA) 80 60 10 40 5 20 0 −50 −25 0 25 TA (_C) www.vishay.com 4 50 75 100 0 −50 −25 0 25 50 75 100 TA (_C) Document Number: 72219 S-32411—Rev. B, 24-Nov-03 Si4750DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Initial Shutdown Time Under A 2-A Lamp Load 1.2 100 Vbb = 14.5 V 1.0 80 0.8 60 L (mH) Shutdown Time (mS) Maximum Allowable Load Inductance For A Single Switch Off 0.6 40 0.4 20 0.2 0.0 −50 −25 0 25 50 75 0 0.0 100 0.5 1.0 1.5 2.5 3.0 3.5 IL (A) TA (_C) 250 2.0 Maximum Inductive Switch Off Energy Single Pulse toff vs. CL 700 L = 0.1 mH Vbb = 14.5 V IL = 2 A 600 200 150 toff (ms) EAS (mJ) 500 100 400 300 200 50 100 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 10 100 IL (A) Typical Turn-On Time 250 200 1K 10 K 100 K 1M CL (nF) Typical Turn-Off Time 180 IL = 2 A CL = 10 mF IL = 2 A CL = 10 mF 150 120 toff (ms) ton (ms) 150 9V 100 9V 90 14.5 V 60 14.5 V 50 0 −50 30 −25 0 25 TA (_C) Document Number: 72219 S-32411—Rev. B, 24-Nov-03 50 75 100 0 −50 −25 0 25 50 75 100 TA (_C) www.vishay.com 5 Si4750DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Typical Slew Rate On Typical Slew Rate Off 0.30 0.9 IL = 2 A CL = 10 mF 14.5 V 0.7 Slew Rate Off (V/ms) Slew Rate On (V/ms) 0.25 IL = 2 A CL = 10 mF 0.8 0.20 9V 0.15 0.10 0.6 0.4 0.3 0.2 0.05 9V 0.5 14.5 V 0.1 0.00 −50 −25 0 25 50 75 0.0 −50 100 −25 0 Temperature (_C) 25 50 75 100 TA (_C) SETUP +Vbb Ibb Vbb IIN IN Si4750DY OUT IL VON 40 V VIN VON GND IGND RGND Vbb OUT GND VOUT VON Clamped to 45 V Typical FIGURE 2. Inductive and Overvoltage Output Clamp FIGURE 1. −Vbb Logic IN IN OUT ESD-ZDL IL GND RGND = 150 W, RL = 3.5 kW Typical Temperature protection is not active during inverse current. FIGURE 3. Input Circuit (ESD Protection) www.vishay.com 6 GND RGND RL Signal Ground Power Ground FIGURE 4. Reverse Pattery Protection Document Number: 72219 S-32411—Rev. B, 24-Nov-03 Si4750DY Vishay Siliconix New Product TIMING DIAGRAMS IN IN VOUT 90% Vbb ton dV/dtoff dV/dton toff 10% IL VOUT t t FIGURE 5. Vbb Turn-On FIGURE 6. Switching A Resistive Load, Turn-on/0ff Time and Slew Rate Definition IN IN VOUT OUT IL IL t FIGURE 7. Switching A Lamp t FIGURE 8. Switching An Inductive Load IN IN t VOUT IL IL(SCp) IL(SCr) TJ tm t t toff(SC) FIGURE 9. Turn-On Into Short Circuit Driving A Cold Filament Document Number: 72219 S-32411—Rev. B, 24-Nov-03 FIGURE 10. Overtemperature: Reset If TJ < TJT www.vishay.com 7 Si4750DY Vishay Siliconix New Product TIMING DIAGRAMS VON Vbb(ucp) Vbb(under) Vbb FIGURE 11. Undervoltage Restart of Charge Pump www.vishay.com 8 Document Number: 72219 S-32411—Rev. B, 24-Nov-03