PROFET® ITS 410 E2
Smart Highside Power Switch
for Industrial Applications
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Operating temperature
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
65
V
4.7 ... 42
V
220 mΩ
1.8
A
5
A
-30…+85 °C
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
Ta
PG-TO220AB/5
5
5
1
Straight leads
Standard
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial
applications
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
3
V Logic
2
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Voltage
Logic
Load
detection
ST
Short circuit
detection
GND
PROFET
1
Signal GND
1)
Load GND
With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
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PROFET® ITS 410 E2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage, the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load
dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
3)
RI = 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high
Load current (Short circuit current, see page 4)
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
IL = 1.8 A, ZL = 2.3 H, 0 Ω:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
Symbol
Vbb
4
VLoad dump )
IL
Tj
Ta
Tstg
Ptot
Values
65
100
Unit
V
V
self-limited
+150
-30 ...+85
-40 …+105
50
A
°C
4.5
1
2
J
kV
VIN
IIN
IST
-0.5 ... +6
±5.0
±5.0
V
mA
Symbol
Values
min
typ
max
--2.5
--75
Unit
EAS
VESD
W
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions
Thermal resistance
2)
3)
4)
chip - case: RthJC
junction - ambient (free air): RthJA
K/W
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
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PROFET® ITS 410 E2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.6 A
Tj=25 °C:
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7, Tj =-40...+150°C
Turn-on time
IN
to 90% VOUT:
to 10% VOUT:
Turn-off time
IN
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
RON
--
190
390
220
440
mΩ
IL(ISO)
IL(GNDhigh)
1.6
--
1.8
--
-1
A
mA
ton
toff
12
5
---
125
85
µs
dV /dton
--
--
3
V/µs
-dV/dtoff
--
--
6
V/µs
Tj =-40...+150°C:
Tj =25°C:
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 13
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
6)
Overvoltage protection
Tj =-40...+150°C:
Ibb=4 mA
Standby current (pin 3)
Tj=-40...+25°C:
VIN=0
Tj= 150°C:
Vbb(on)
Vbb(under)
4.7
2.9
2.7
---
----5.6
42
4.5
4.7
4.9
6.0
V
V
∆Vbb(under)
--
0.1
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
42
40
-65
--0.1
70
52
----
V
V
V
V
IL(off)
10
18
--
15
25
20
µA
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)7), VIN=5 V,
Tj =-40...+150°C
----
IGND
--
1
2.1
mA
Operating Parameters
Operating voltage 5)
Undervoltage shutdown
5)
6)
Vbb(u rst)
Vbb(ucp)
Ibb(off)
V
V
µA
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.
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PROFET® ITS 410 E2
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions8)
Initial peak short circuit current limit (pin 3 to 5)9),
IL(SCp)
( max 450 µs if VON > VON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive overload shutdown current limit
IL(SCr)
VON= 8 V, Tj = Tjt (see timing diagrams, page 12)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C: td(SC)
Values
min
typ
max
9
-4
-12
--
23
-15
A
--
5
--
A
--
--
450
µs
VON(CL)
61
--
68
--
73
75
V
VON(SC)
Tjt
∆Tjt
-Vbb
-150
---
8.5
-10
--
---32
V
°C
K
V
2
--
150
min value valid only, if input "low" time exceeds 60 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C:
IL= 1 A, Tj =-40..+150°C:
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 10)
Diagnostic Characteristics
Open load detection current
(on-condition)
Tj=-40 ..150°C:
Unit
IL (OL)
mA
7)
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
9)
Short circuit current limit for max. duration of td(SC) max=450 µs, prior to shutdown
10)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
8)
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PROFET® ITS 410 E2
Parameter and Conditions
Symbol
Values
min
typ
max
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
IIN(on)
td(ST SC)
1.5
1.0
-1
10
--
--0.5
-25
--
2.4
--30
70
450
V
V
V
µA
µA
µs
td(ST)
300
--
1400
µs
VST(high)
VST(low)
5.0
--
6
--
-0.4
V
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback11)
Tj =-40..+150°C:
Input turn-on threshold voltage
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
On state input current (pin 2), VIN = 5 V
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +50 uA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
11)
Unit
If a ground resistor RGND is used, add the voltage drop across this resistor.
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PROFET® ITS 410 E2
Truth Table
Input-
Output
Status
level
level
410 E2
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
H
H
L
H
L
H
13
H (L ))
L
L
H
H
H
H
Normal operation
Open load
Short circuit to
GND
Short circuit to Vbb
Overtemperature
Undervoltage
Overvoltage
L = "Low" Level
H = "High" Level
12)
H
L
L
H
H
L
L
L
L
L
L
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 13)
Terms
Input circuit (ESD protection)
Ibb
I IN
2
V
bb
IN
V ST
IN
V bb
IN
IL
PROFET
I ST
V
R
3
4
OUT
V ON
I
ESDZDI1 ZDI2
5
ST
I
I
GND
1
R
I
GND
GND
V OUT
GND
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
12)
13)
Power Transistor off, high impedance.
Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
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PROFET® ITS 410 E2
Status output
Overvolt. and reverse batt. protection
+ V bb
+5V
V
R IN
R ST(ON)
ST
GND
Z2
IN
Logic
ST
R ST
ESDZD
V
PROFET
Z1
GND
ESD-Zener diode: 6 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Short circuit detection
R GND
Signal GND
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 Ω, RIN,
RST= 15 kΩ
Open-load detection
Fault Condition: VON > 8.5 V typ.; IN high
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+ V bb
+ V bb
V
ON
Logic
unit
VON
ON
OUT
Short circuit
detection
OUT
Open load
detection
Logic
unit
Inductive and overvoltage output clamp
+ V bb
V
GND disconnect
Z
VON
3
OUT
GND
2
IN
PROFET
Vbb
PROFET
4
VON clamped to 68 V typ.
V
bb
V
IN
V
ST
OUT
5
ST
GND
1
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
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PROFET® ITS 410 E2
GND disconnect with GND pull up
Inductive Load switch-off energy
dissipation
E bb
3
2
IN
Vbb
E AS
OUT
PROFET
4
5
IN
ST
GND
PROFET
1
V
V
bb
V
=
V
IN ST
ELoad
Vbb
OUT
ST
GND
GND
ZL
{
EL
L
RL
ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
3
high
2
IN
Vbb
OUT
PROFET
4
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
5
ST
IL· L
IL·RL
)
EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V
L
OUT(CL)|
GND
1
V
Maximum allowable load inductance for
a single switch off
bb
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
L [mH]
10000
Normal load current can be handled by the PROFET
itself.
Vbb disconnect with charged external
inductive load
high
2
S
3
IN
Vbb
PROFET
4
1000
OUT
5
D
ST
GND
100
1
V
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
10
1
1
2
3
4
5
6
IL [A]
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PROFET® ITS 410 E2
Typ. transient thermal impedance chip case
ZthJC = f(tp, D), D=tp/T
ZthJC [K/W]
10
1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.1
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
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PROFET® ITS 410 E2
Options Overview
High-side switch, Input protection, ESD protection, load dump and reverse battery
protection with 150 Ω in GND connection, protection against loss of ground
Type
Logic version
ITS410E2
E
Overtemperature protection with hysteresis
Tj >150 °C, latch function14)15)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
X
switches off when VON>3.5 V typ. and Vbb> 7 V typ14)
(when first turned on after approx. 150 µs)
switches off when VON>8.5 V typ.14)
(when first turned on after approx. 150 µs)
X
Achieved through overtemperature protection
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across power
transistor
X
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart
X
16)
X
Status feedback for
overtemperature
X
short circuit to GND
X
17
- )
short to Vbb
open load
X
undervoltage
-
overvoltage
-
Status output type
CMOS
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
Load current limit
high level (can handle loads with high inrush currents)
X
low level (better protection of application)
Protection against loss of GND
X
14)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
15)
With latch function. Reseted by a) Input low, b) Undervoltage
16)
No auto restart after overvoltage in case of short circuit
17)
Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
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PROFET® ITS 410 E2
Timing diagrams
Figure 1a: Vbb turn on:
Figure 2b: Switching an inductive load
IN
IN
t
V
bb
d(bb IN)
t
ST
d(ST)
*)
V
OUT
V
OUT
A
ST open drain
IL
t
A
I L(OL)
t
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
*) if the time constant of load is too large, open-load-status may
occur
Figure 2a: Switching a lamp,
IN
ST
V
OUT
I
L
t
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PROFET® ITS 410 E2
Figure 3c: Short circuit while on:
Figure 3a: Turn on into short circuit,
IN
IN
ST
ST
VOUT
V OUT
td(SC)
I
IL
L
**)
t
t
td(SC) approx. -- µs if Vbb - VOUT > 8.5 V typ.
**) current peak approx. 20 µs
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 3b: Turn on into overload,
IN
IN
IL
ST
I L(SCp)
IL(SCr)
V
OUT
T
ST
J
t
t
Heating up may require several seconds,
Vbb - VOUT < 8.5 V typ.
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PROFET® ITS 410 E2
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 6a: Undervoltage:
IN
IN
ST
V
t
d(ST)
bb
Vbb(u cp)
Vbb(u rst)
V
bb(under)
V
OUT
V OUT
I
L
ST open drain
open
t
t
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
Figure 6b: Undervoltage restart of charge pump
VON(CL)
Von
IN
d(ST OL2)
OUT
on-state
V
V
bb(u rst)
I
normal
L
open
V
normal
V
V
V
bb(over)
off-state
t
off-state
ST
t
d(ST OL1)
bb(o rst)
bb(u cp)
bb(under)
V bb
t
charge pump starts at Vbb(ucp) =5.6 V typ.
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
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PROFET® ITS 410 E2
Figure 7a: Overvoltage:
IN
Vbb
VON(CL)
Vbb(over)
V bb(o rst)
V
OUT
ST
t
Figure 9a: Overvoltage at short circuit shutdown:
IN
Vbb
V bb(o rst)
Output short to GND
VOUT
short circuit shutdown
IL
ST
t
Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown.
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PROFET® ITS 410 E2
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2006
All Rights Reserved.
Package and Ordering Code
All dimensions in mm
Standard PG-TO220AB/5
ITS 410 E2
Ordering code
SP000221219
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
PG-TO220AB/5, Option E3043 Ordering code
ITS 410 E2 E3043
Infineon Technologies AG
SP000221227
15
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
2006-Mar-28