TOSHIBA 2SK3312

2SK3312
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV)
2SK3312
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
z Low drain−source ON resistance
: RDS (ON) = 0.9 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
Unit: mm
z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
600
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate−source voltage
VGSS
±30
V
(Note 1)
ID
6
A
Pulse (Note 1)
IDP
24
A
Drain power dissipation (Tc = 25°C)
PD
65
W
Single pulse avalanche energy
(Note 2)
EAS
345
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy (Note 3)
EAR
6.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
DC
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
1.92
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
83.3
°C / W
JEDEC
―
Note 1: Ensure that the channel temperature does not exceed 150°C.
JEITA
―
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, RG = 25 Ω,
IAR = 6 A
TOSHIBA
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
2-10S2B
Weight: 1.5 g (typ.)
This transistor is an electrostatic-sensitive device.
Please handle with caution.
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2SK3312
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±25 V, VDS = 0 V
—
—
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
—
V
IDSS
VDS = 600 V, VGS = 0 V
—
—
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
—
—
V
Vth
VDS = 10 V, ID = 1 mA
3.0
—
5.0
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
—
0.9
1.25
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
1.2
3.5
—
S
Input capacitance
Ciss
—
1000
—
Reverse transfer capacitance
Crss
—
8
—
Output capacitance
Coss
—
110
—
tr
—
15
—
ton
—
30
—
Rise time
Turn−on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
Switching time
pF
ns
Fall time
tf
—
10
—
Turn−off time
toff
—
55
—
Total gate charge (gate−source
plus gate−drain)
Qg
—
21
—
Gate−source charge
Qgs
—
12
—
Gate−drain (“miller”) Charge
Qgd
—
9
—
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
6
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
24
A
Forward voltage (diode)
VDSF
—
—
−1.7
V
Reverse recovery time
trr
—
1000
—
ns
Reverse recovery charge
Qrr
—
7
—
μC
IDR = 6 A, VGS = 0 V
IDR = 6 A, VGS = 0 V, dIDR / dt = 100 A / μs
Marking
K3312
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2006-11-08
2SK3312
ID – VDS
15
P U LS E T E S T
T c=25℃
3
6.75
6.5
2
6.25
6.0
1
P U LS E T E S T
8
DRAIN CURRENT ID
7.0
DRAIN CURRENT ID
C O M M O N SO U R C E
10
15
T c=25℃
7.25
4
10
C O M M O N SO U R C E
10
(A)
(A)
5
ID – VDS
7.75
7.5
6
7.25
7.0
4
6.75
6.5
2
VGS=6.0V
VGS=5.5V
0
0
0
2
4
6
8
DRAIN－SOURCE VOLTAGE
VDS
0
10
10
20
DRAIN-SOURCE VOLTAGE
(V)
ID – VGS
10
20
VDS (V)
P U LS E T E S T
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT ID
(A)
V D S =20V
6
4
25
Tc=-55℃
2
VDS
50
(V)
100
C O M M O N SO U R C E
T c=25℃
P U LS E T E S T
16
12
8
ID=6A
4
3
1.5
0
0
0
2
4
6
GATE-SOURCE VOLTAGE
8
VGS
0
10
8
12
GATE-SOURCE VOLTAGE
10
C O M M O N SO U R C E
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (Ω)
V D S =20V
P U LS E T E S T
10
TC=-55℃
4
(V)
⎪Yfs⎪ – ID
100
FORWARD TRANSFER ADMITANCE
⎪Yfs⎪ (S)
40
VDS – VGS
C O M M O N SO U R C E
8
30
25
100
1
0.1
16
VGS
20
(V)
RDS (ON) – ID
C O M M O N SO U R C E
T c=25℃
P U LS E T E S T
1
VGS=10,15V
0.1
0.1
1
10
DRAIN CURRENT ID
100
0.1
(A)
1
DRAIN CURRENT ID
3
10
(A)
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2SK3312
RDS (ON) – Tc
C O M M O N SO U R C E
C O M M O N SO U R C E
T c=25℃
V G S =10V
P U LS E T E S T
4
3
ID =6A
3
2
1.5
1
P U LS E T E S T
DRAIN REVERSE CURRENT
IDR (A)
1
10
0
5
3
0
40
80
CASE TEMPERATURE
120
Tc
160
0
-0.2
(°C)
-0.4
CAPACITANCE – VDS
GATE THRESHOLD VOLTAGE
Vth (V)
Ciss
1000
Coss
100
COMMON SOURCE
10
Crss
V GS=0V
f=1MHz
Tc=25℃
1
0.1
1
(V)
COMMON SOURCE
V DS=10V
5
ID =1mA
PULSE TEST
4
3
2
1
10
-80
100
VDS
VDS (V)
DRAIN-SOURCE VOLTAGE
80
60
40
20
0
120
CASE TEMPERATURE
0
40
80
120
Tc
160
(°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
100
80
-40
CASE TEMPERATURE
(V)
PD ― Tc
40
VDS
-1.2
0
DRAIN-SOURCE VOLTAGE
0
-1
Vth – Tc
6
C
(pF)
-0.8
DRAIN--SOURCE VOLTAGE
10000
CAPACITANCE
-0.6
160
Tc
500
C O M M O N SO U R C E
ID = 6A
400
T c= 25℃
VDS
VDD=90V
4
12
360
8
200
VGS
4
100
0
0
10
20
TOTAL GATE CHARGE
(°C)
16
P U LS E T E S T
180
180
300
0
200
20
(V)
-40
VGS
-80
DRAIN POWER DISSIPATION
PD (W)
VGS =0,-1V
1
0.1
GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( Ω)
5
IDR – VDS
10
30
Qg
(nC)
2006-11-08
2SK3312
RG = 25 Ω
VDD = 90 V, L = 16.8 mH
5
EAS =
B VDSS
1
⎛
⎞
⋅ L ⋅ I2 ⋅ ⎜
⎟
2
⎝ B VDSS − VDD ⎠
2006-11-08
2SK3312
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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