TOSHIBA 2SK2965

2SK2965
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2965
Switching Regulator, DC−DC Converter and Motor Drive
Applications
z Low drain−source ON resistance
: RDS (ON) = 0.15 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 10 S (typ.)
Unit: mm
z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)
z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
200
V
Drain–gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate–source voltage
VGSS
±20
V
(Note 1)
ID
11
A
Pulse (Note 1)
IDP
33
A
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
115
mJ
Avalanche current
IAR
11
A
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
DC
JEDEC
―
JEITA
TOSHIBA
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
3.57
°C / W
Thermal resistance, channel to
ambient
Rth (ch–a)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.53 mH, RG = 25 Ω, IAR = 11 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
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2SK2965
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
—
±10
μA
Drain cut–off current
IDSS
VDS = 200 V, VGS = 0 V
—
—
100
μA
—
—
V
Drain–source breakdown voltage
Gate threshold voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drain–source ON resistance
RDS (ON)
VGS = 10 V, ID = 5.5 A
—
0.15
0.26
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5.5 A
5.0
10
—
S
Input capacitance
Ciss
—
1200
—
Reverse transfer capacitance
Crss
—
100
—
Output capacitance
Coss
—
290
—
tr
—
15
—
ton
—
25
—
Rise time
Turn–on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
Switching time
pF
ns
Fall time
tf
—
10
—
toff
—
75
—
Total gate charge
(gate–source plus gate–drain)
Qg
—
30
—
Gate–source charge
Qgs
—
20
—
Gate–drain (“miller”) Charge
Qgd
—
10
—
Turn–off time
VDD ≈ 100 V, VGS = 10 V, ID = 10 A
nC
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
11
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
33
A
Forward voltage (diode)
VDSF
—
—
−2.0
V
Reverse recovery time
trr
—
175
—
ns
Reverse recovery charge
Qrr
—
1.3
—
μC
IDR = 11 A, VGS = 0 V
IDR = 11 A, VGS = 0 V, IDR / dt = 100 A / μs
Marking
K2965
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SK2965
ID – VDS
ID – VDS
15
5
(A)
16
10
15
Common source
Tc = 25°C
Pulse test
20
ID
4.5
12
Drain current
Drain current
ID
(A)
20
4.25
8
4
4
16
5
Common source
Tc = 25°C
Pulse test
10
4.5
12
4.25
8
4
4
VGS = 3.5 V
VGS = 3.5 V
0
0
1
2
3
4
Drain−source voltage
VDS
0
0
5
(V)
4
8
VDS (V)
Drain−source voltage
(A)
ID
Drain current
Tc = −55°C
100
8
25
4
4
6
8
Gate−source voltage
VGS
5
4
3
5.5
1
2.5
0
0
10
ID = 11 A
2
(V)
4
8
(S)
Drain−source ON resistance
RDS (ON) (Ω)
⎪Yfs⎪
Common source
VDS = 10 V
Pulse test
Forward transfer admittacne
25
100
10
Drain current
16
VGS
20
(V)
RDS (ON) – ID
Tc = −55°C
1
1
12
Gate−source voltage
1
10
(V)
Common source
Tc = 25°C
Pulse test
⎪Yfs⎪ – ID
100
20
VDS – VGS
12
2
VDS
6
Common source
VDS = 10 V
Pulse test
16
0
0
16
Drain−source voltage
ID – VGS
20
12
ID
VGS = 10, 15 V
0.1
0.01
0.1
100
(A)
Common source
Tc = 25°C
Pulse test
1
Drain current
3
10
ID
100
(A)
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2SK2965
RDS (ON) – Tc
(A)
Common source
VGS = 10 V
Pulse test
IDR
ID = 11 A
0.3
5.5
0.2
2.5
0.1
−40
0
40
80
Case temperature
Tc
120
10
10
1
3
VGS = 0, −1 V
0.1
0
160
5
(°C)
−0.2
−0.4
Drain−source voltage
Capacitance – VDS
Vth (V)
Gate threshold voltage
Capacitance
C
(pF)
Ciss
1000
Coss
100
Common source
f = 1 MHz
Crss
Tc = 25°C
10
0.1
1
10
Drain−source voltage
4
VDS
(V)
80
120
−1.2
2
1
−40
0
40
Case temperature
100
VDS
Common source
VDS = 10 V
ID = 1 mA
Pulse test
3
0
−80
PD – Tc
Drain−source voltage
30
20
10
120
Case temperature
Tc
160
160
(°C)
VDS
120
16
160
80
40
10
8
4
VGS
20
Total gate charge
4
20
12
VDD = 40 V
80
0
0
200
Common source
ID = 11 A
Tc = 25°C
Pulse test
VGS
VDS (V)
(W)
40
80
(°C)
Dynamic input/output characteristics
200
40
Tc
160
(V)
50
PD
−1.0
5
VGS = 0 V
Drain power dissipation
−0.8
Vth – Tc
10000
0
0
−0.6
(V)
0
−80
Common source
Tc = 25°C
Pulse test
30
Qg
Gate−source voltage
0.4
IDR – VDS
100
Drain reverse current
Drain−source ON resistance
RDS (ON) (Ω)
0.5
0
40
(nC)
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2SK2965
Safe operating area
EAS – Tch
100
200
EAS (mJ)
ID max (Pulsed) *
100 μs *
ID max (Continuous) *
Avalanche energy
(A)
10
Drain current
ID
1 ms *
1
DC operation
Tc = 25°C
160
120
80
40
0
25
0.1
*
50
75
100
Channel temperature (initial)
Single nonrepetitive pulse
Tc = 25°C
125
150
Tch (°C)
Curves must be derated
linearly with increase in
temperature.
0.01
1
VDSS max
10
Drain−source voltage
VDS
15 V
1000
100
(V)
BVDSS
IAR
−15 V
VDD
Test circuit
RG = 25 Ω
VDD = 50 V, L = 1.53 mH
5
VDS
Wave form
⎞
1
B VDSS
2 ⎛
⎟
Ε AS = ⋅ L ⋅ I ⋅ ⎜⎜
⎟
−
2
B
V
VDSS
DD
⎝
⎠
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2SK2965
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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