TOSHIBA TK13H90A1

TK13H90A1
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type(MACHⅡ π-MOSIV)
TK13H90A1
Swiching Regulator Applications
Unit: mm
z Low drain−source ON resistance
: RDS (ON) = 0.78Ω (typ.)
z High forward transfer admittance
: |Yfs| = 11S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
900
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate−source voltage
VGSS
±30
V
(Note 1)
ID
13
A
Pulse (Note 1)
IDP
39
A
Drain power dissipation (Tc = 25°C)
PD
150
W
JEDEC
―
Single pulse avalanche energy
(Note 2)
EAS
491
mJ
JEITA
―
Avalanche current
IAR
13
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
DC
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
TOSHIBA
2-16K1A
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
2
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
50
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.3 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TK13H90A1
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
—
—
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
—
V
IDSS
VDS = 720 V, VGS = 0 V
—
—
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
—
—
V
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 6.5 A
—
0.78
0.95
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 6.5 A
5.0
11
—
S
Input capacitance
Ciss
—
2790
—
Reverse transfer capacitance
Crss
—
25
—
Output capacitance
Coss
—
300
—
—
53
—
—
88
—
—
43
—
Gate threshold voltage
Rise time
Turn−on time
VDS = 25 V, VGS = 0 V, f = 1 MHz
ID=6.5
tr
ton
RL=62Ω
50Ω
Switching time
Fall time
pF
ns
tf
VDD=400V
Turn−off time
toff
—
165
—
Total gate charge (gate−source
plus gate−drain)
Qg
—
45
—
Gate−source charge
Qgs
—
32
—
Gate−drain (“miller”) Charge
Qgd
—
13
—
VDD ≈ 400 V, VGS = 10 V, ID = 13 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
13
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
39
A
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
—
—
−1.7
V
Reverse recovery time
trr
—
1400
—
ns
Reverse recovery charge
Qrr
IDR = 13 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
24
—
μC
Marking
TOSHIBA
TK13H90A1
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2006-11-13
TK13H90A1
ID – VDS
Common source
Tc = 25°C
Pulse test
ID – VDS
20
10
8
6
ID
5.0
6
Drain current
ID
(A)
8
Drain current
10
5.5
(A)
10
4.8
4
4.6
4.4
2
8
5.5
16
12
5.0
8
4.8
4
4.6
4.2
VGS = 4 V
0
0
2
4
6
8
Drain−source voltage
VDS
VGS = 4.2 V
0
10
0
(V)
10
20
VDS (V)
(A)
8
Drain−source voltage
ID
Drain current
12
25
100
Tc = −55°C
4
2
4
6
8
Gate−source voltage
VGS
16
12
ID = 13 A
8
6.5
4
0
10
3.3
0
(V)
4
8
16
VGS
20
(V)
RDS (ON) − ID
10
Common source
VDS = 20 V
Pulse test
Drain−source ON resistance
RDS (ON) (Ω)
(S)
12
Gate−source voltage
100
⎪Yfs⎪
(V)
Common source
Tc = 25°C
Pulse test
⎪Yfs⎪ − ID
Forward transfer admittance
VDS
50
VDS – VGS
Common source
VDS = 20 V
Pulse test
0
40
20
16
0
30
Drain−source voltage
ID – VGS
20
Common source
Tc = 25°C
Pulse test
6
Tc = −55°C
10
25
100
1
0.1
0.1
1
Drain current
10
ID
Common source
Tc = 25°C
Pulse test
0.1
100
(A)
VGS = 10 ,15 V
1
1
Drain current
3
10
0.1
ID
100
(A)
2006-11-13
TK13H90A1
RDS (ON) − Tc
IDR − VDS
100
IDR
1.6
ID = 13 A
6.5
1.2
3.3
0.8
0.4
0
−80
−40
Common source
Tc = 25°C
Pulse test
(A)
Common source
VGS = 10 V
Pulse test
Drain reverse current
0
40
80
Case temperature
Tc
120
10
1
10
5
3
0.1
160
0
0.4
1.0
Drain−source voltage
VDS
(V)
80
120
0.6
C − VDS
Vth (V)
(pF)
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
Crss
1
10
Drain−source voltage
2
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
100
VDS
3
−40
(V)
0
40
Case temperature
Tc
200
Drain−source voltage
150
100
50
120
Case temperature
Tc
160
400
(°C)
VDS
VDD = 100 V
300
200V
16
12
8
200
VGS
4
100
20
40
Total gate charge
4
20
400V
0
0
200
Common source
ID = 13 A
Tc = 25°C
Pulse test
VGS
VDS (V)
(W)
500
80
(°C)
Dynamic input/output
characteristics
PD – Tc
40
160
(V)
Capacitance
C
Gate threshold voltage
1000
PD
1.4
4
Ciss
Drain power dissipation
1.2
Vth − Tc
10000
0
0
VGS = 0 V
0.8
0.2
(°C)
1
60
Qg
80
Gate−source voltage
Drain−source ON resistance
RDS (ON) (Ω)
2
0
100
(nC)
2006-11-13
TK13H90A1
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single pulse
PDM
t
0.01
T
Duty = t/T
Rth (ch-c) = 0.833°C/W
0.001
10μ
100μ
1ｍ
10ｍ
Pulse width
100ｍ
tw
1
(s)
EAS – Tch
Safe operating area
600
ID max (Pulse) *
EAS (mJ)
100
100 μs *
ID max (Continuous)
Drain current
ID
(A)
Avalanche energy
1 ms *
10
DC operation
Tc = 25°C
1
500
400
300
200
100
0
25
0.1
Curves
must
be
linearly
with
increase
75
100
125
150
Tch (°C)
derated
in
VDSS max
temperature.
1
50
Channel temperature (initial)
* Single nonrepetitive pulse
Tc = 25°C
0.01
10
10
Drain−source voltage
100
VDS
BVDSS
15 V
1000
(V)
IAR
−15 V
VDS
VDD
Test circuit
RG = 25 Ω
VDD = 90 V, L = 5.3 mH
5
Wave form
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
2006-11-13
TK13H90A1
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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