2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications · High DC current gain: hFE (1) = 100~320 · Low saturation voltage: VCE (sat) = 0.4 V (max) · Complementary to 2SA1298 Unit: mm (IC = 500 mA, IB = 20 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range Electrical Characteristics (Ta = 25°C) Characteristics JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 25 ¾ ¾ V Emitter-base breakdown voltage V (BR) EBO IE = 0.1 mA, IC = 0 5 ¾ ¾ V VCE = 1 V, IC = 100 mA 100 ¾ 320 hFE (2) VCE = 1 V, IC = 800 mA 40 ¾ ¾ VCE (sat) IC = 500 mA, IB = 20 mA ¾ ¾ 0.4 V hFE (1) DC current gain (Note) Collector-emitter saturation voltage Base-emitter voltage VBE VCE = 1 V, IC = 10 mA 0.5 ¾ 0.8 V Transition frequency fT VCE = 5 V, IC = 10 mA ¾ 120 ¾ MHz VCB = 10 V, IE = 0, f = 1 MHz ¾ 13 ¾ pF Collector output capacitance Note: hFE (1) classification Cob O: 100~200, Y: 160~320 Marking 1 2003-03-25 2SC3265 2 2003-03-25 2SC3265 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 2003-03-25