CUS05 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS05 Switching Mode Power Supply Applications Portable Equipment Battery Application Unit: mm 1.25 +− 0.2 0.1 0.13 −+ 0.05 0.03 0.88 ± 0.1 Forward voltage: VFM = 0.37 V (max) @IF = 0.7 A • Average forward current: IF (AV) = 1.0 A 2.5 ± 0.2 • • Repetitive peak reverse voltage: VRRM = 20 V • Suitable for high-density board assembly due to the use of a small 1.9 ± 0.1 ② Surface-mount package, US−FLATTM ① 0.6 ± 0.1 0.6 ± 0.1 1.4 ± 0.2 Symbol Rating Unit Repetitive peak reverse voltage VRRM 20 V Average forward current IF (AV) 1.0 (Note 1) A IFSM 20 (50 Hz) A Tj −40 to 125 °C JEDEC ⎯ Tstg −40 to 150 °C JEITA ⎯ Peak one cycle surge forward current (Non-repetitive) Junction temperature Storage temperature range Note : ① ANODE ② CATHODE 0.5 ± 0.1 Characteristics 0.6 ± 0.1 0 ~ 0.05 Absolute Maximum Ratings (Ta = 25°C) 0.88 ± 0.1 0.78 ± 0.1 0.6 ± 0.1 TOSHIBA 3-2B1A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.004 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ta = 66°C: Device mounted on a ceramic board (board size: 50 mm × 50 mm, Soldering land: 2 mm × 2 mm) Rectangular waveform (α = 180°), VR = 10 V 1 2009-11-11 CUS05 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Peak forward voltage Repetitive peak reverse current Junction capacitance Typ. Max Unit IFM = 0.1 A ⎯ 0.25 ⎯ VFM (2) IFM = 0.7 A ⎯ 0.33 0.37 VFM (3) IFM = 1.0 A ⎯ 0.39 ⎯ IRRM (1) VRRM = 5 V ⎯ 50 ⎯ μA IRRM (2) VRRM = 20 V ⎯ 0.2 1.0 mA VR = 10 V, f = 1.0 MHz ⎯ 40 ⎯ pF Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 mm) ⎯ ⎯ 75 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) (board thickness: 1.6 mm) ⎯ ⎯ 150 Junction to lead of cathode side ⎯ ⎯ 30 Rth (j-a) Thermal resistance (junction to lead) Min VFM (1) Cj Thermal resistance (junction to ambient) Test Condition Rth (j-ℓ) V °C/W °C/W Marking Abbreviation Code Part No. 5 CUS05 Standard Soldering Pad 2.0 0.5 Unit: mm 0.8 0.8 1.1 Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This device is VF-IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when voltage is applied. Please take forward and reverse loss into consideration during design. The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. The following are the general derating methods that we recommend for designing a circuit using this device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into account designing a device at low temperature. IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF(AV) and Tj be below 100°C. When using this device, take the margin into consideration by using an allowable Tamax-IF(AV) curve. IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at Tj of below 100°C. Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance value. Refer to the Rectifiers databook for further information. 2 2009-11-11 CUS05 iF – vF PF (AV) – IF (AV) 10 0.5 Average forward power dissipation PF (AV) (W) Tj = 125°C 1 75°C 25°C 0.1 0.01 0 0.2 0.4 0.6 0.8 Instantaneous forward voltage vF 0.4 120° 0.3 α= 60° 0.2 Rectangular waveform 0.1 0 0 1.0 180° 0°α 360° Conduction angle: α 0.2 0.4 Maximum allowable ambient temperature Ta max (°C) 80 α = 60° 40 0°α 360° 20 180° 120° Rectangular waveform DC IF (AV) Maximum allowable ambient temperature Ta max (°C) 100 60 Conduction angle: α VR = 10 V 0 0 0.2 0.4 0.6 0.8 1.0 Average forward current 1.2 IF (AV) 1.4 120 0 0 IFSM (A) Peak surge forward current DC IF (AV) Maximum allowable lead temperature Tℓ max (°C) 180° Conduction angle: α VR = 10 V 0.2 0.4 0.6 0.8 1.0 Average forward current Rectangular waveform 180° 40 20 DC 120° α =60° 0.2 0.4 0.6 0.8 1.0 1.2 IF (AV) 1.4 1.6 (A) Surge forward current (non-repetitive) 80 0°α 360° (A) 0°α 360° Average forward current 100 40 1.6 Conduction angle: α VR = 10 V 24 120° 1.4 60 (A) 120 20 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) 80 Tℓmax – IF (AV) α = 60° Rectangular waveform 1.2 IF (AV) 100 0 0 1.6 140 60 1.0 Ta max – IF (AV) 140 Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) 120 0.8 Average forward current (V) Ta max – IF (AV) 140 0.6 IF (AV) Instantaneous forward current iF (A) DC 1.2 IF (AV) 1.4 f = 50 Hz 20 16 12 8 4 0 1 1.6 (A) Ta = 25°C 10 100 Number of cycles 3 2009-11-11 CUS05 Cj – VR IR – Tj (typ.) 1000 (typ.) 100 f = 1 MHz Pulse test (mA) Reverse current IR Junction capacitance Cj (pF) Ta = 25°C 100 10 1 10 VR 0.6 DC 300° 180° 0.4 120° 60° 4 8 Reverse voltage 12 VR 20 40 60 80 100 16 120 140 (°C) rth (j-a) – t 240° 0 0 0.1 10000 0°α 360° 0.2 3V (typ.) Rectangular waveform Conduction angle: α Tj = 125°C 10 V 5V Junction temperature Tj Transient thermal impedance rth (j-a) (°C/W) Average reverse power dissipation PR (AV) (W) 0.8 15 V 1 (V) PR (AV) – VR 1.0 VR = 20 V 0.01 0 100 Reverse voltage 10 1000 (1) Device mounted on a ceramic board Soldering land: 2 mm × 2 mm (2) Device mounted on a glass-epoxy board Soldering land: 6 mm × 6 mm (3) Device mounted on a glass-epoxy board Standard Soldering pad (2) 100 (1) 10 1 0.001 20 (V) (3) 0.01 0.1 1 10 100 1000 Time t (s) 4 2009-11-11 CUS05 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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