CRS15 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS15 Switching Mode Power Supply Applications Portable Equipment Battery Applications Unit: mm Forward current (DC): IF (DC) = 3.0 A • Repetitive peak reverse voltage: VRRM = 30 V • Suitable for high-density board assembly due to the use of a small surface-mount package, “S-FLATTM” 0.9 ± 0.1 Rating Unit Repetitive peak reverse voltage VRRM 30 V Forward current (DC) IF (DC) 3.0 (Note 1) A IFSM 30 (50 Hz) A Junction temperature Tj −40 to 150 °C Storage temperature Tstg −40 to 150 °C Note 1: Ta = 69°C : Device mounted on a ceramic board Board size : 50 mm × 50 mm Soldering size : 2 mm × 2 mm Board thickness : 0.64 mm DC waveform (VR = 0 V) ① 0 ~ 0.1 Symbol Peak one cycle surge forward current (non-repetitive) 0.16 + 0.2 1.6 − 0.1 0.98 ± 0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristics 0.65 ± 0.2 Forward voltage: VFM = 0.52 V (max) @ IF = 3.0 A • 2.6 ± 0.1 3.5 ± 0.2 • 0.65 ± 0.2 ② ① ANODE ② CATHODE JEDEC ⎯ JEITA ⎯ TOSHIBA 3-2A1A Weight: 0.013 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-04-01 CRS15 Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Thermal resistance (junction to ambient) Symbol Test Condition Min Typ. Max VFM (1) IFM = 0.1 A (pulse test) ⎯ 0.35 ⎯ VFM (2) IFM = 1.0 A (pulse test) ⎯ 0.415 ⎯ VFM (3) IFM = 3.0 A (pulse test) ⎯ 0.47 0.52 IRRM (1) VRRM = 5.0 V (pulse test) ⎯ 0.8 ⎯ IRRM (2) VRRM = 30 V (pulse test) ⎯ 10 50 VR = 10 V, f = 1.0 MHz ⎯ 90 ⎯ Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 mm) ⎯ ⎯ 70 Cj Rth (j-a) (soldering land: 6 mm × 6 mm) V μA pF °C/W Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) Unit ⎯ ⎯ 140 ⎯ ⎯ 20 (board thickness: 1.6 mm) Thermal resistance (junction to lead) ⎯ Rth (j-ℓ) 2 °C/W 2009-04-01 CRS15 Marking Part No.(or abbreviation code) Abbreviation Code Part No. SE CRS15 Anode Cathode SE Cathode mark and Lot code Standard Soldering Pad Unit: mm 1.2 1.2 2.8 Handling Precaution Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even for a moment. Do not exceed any of these ratings. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into account designing a device at low temperature. IF(AV) and IF(DC): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF(AV) and Tj be below 120°C. When using this device, take the margin into consideration by using an allowable Ta max-IF(AV) curve. IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a Tj of below 120°C. Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Please refer to the Rectifiers databook for further information. 3 2009-04-01 CRS15 PF (AV) – IF (AV) 3 Tj = 150°C 125°C 1 75°C 25°C 0.3 0.1 0.03 1.2 120° 0.8 Rectangular waveform 0.6 0.4 0° α 360° 0.2 Conduction angle α 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instantaneous forward voltage vF (V) 0 0.0 0.8 0.6 1.2 160 Rectangular waveform 3.0 3.6 IF (AV) (A) Rectangular waveform 140 Maximum allowable temperature Ta max (°C) 0° α 360° IF (AV) Conduction angle α VR = 15 V 120 100 DC 80 60 180° 40 120° α = 60° 0 0.0 0.6 1.2 1.8 2.4 Average forward current 3.0 0° α 360° IF (AV) Conduction angle α VR = 15 V 120 100 80 60 40 DC 20 20 α = 60° 0 0.0 3.6 IF (AV) (A) 180° 120° 0.6 1.2 1.8 2.4 Average forward current 3.0 3.6 IF (AV) (A) rth (j-a) – t Tℓ max – IF (AV) 1000 160 500 140 Transient thermal impedance rth (j-a) (°C/W) DC 120 100 180° 120° α = 60° 80 Rectangular waveform 40 20 2.4 Ta max – IF (AV) Glass-epoxy substrate (substrate size: 50 mm × 50 mm, soldering land: 6 mm × 6 mm) 140 60 1.8 Average forward current 50 mm × 50 mm, soldering land: 2 mm × 2 mm) 160 Maximum allowable lead temperature Tℓ max (°C) DC α = 60° 1.0 Ta max – IF (AV) Ceramic substrate (substrate size: Maximum allowable temperature Ta max (°C) 180° 1.4 Average forward power dissipation PF (AV) (W) Instantaneous forward current iF (A) iF – vF 10 0° α 360° IF (AV) Conduction angle α VR = 15 V 0 0.0 0.6 1.2 300 100 Device mounted on a glass-epoxy board: board size: 50 mm × 50 mm Soldering land: 6.0 mm × 6.0 mm board thickness: 1.6 mm 50 30 10 Device mounted on a ceramic board: board size: 50 mm × 50 mm Soldering land: 2.0 mm × 2.0 mm board thickness: 0.64 mm 5 3 1.8 Average forward current 2.4 3.0 1 0.001 3.6 0.01 0.1 1 10 100 Time t (s) IF (AV) (A) 4 2009-04-01 CRS15 Surge forward current (non-repetitive) Cj – VR f = 1 MHz (pF) Ta = 25°C f = 50 Hz 20 10 1 3 5 10 30 50 Ta = 25°C 500 Cj 30 0 300 100 50 30 10 1 100 3 Number of cycles IR – Tj (typ.) VR = 30 V 1 20 V 10 V 5V 3V 0.001 0.0001 0 20 40 60 80 100 Junction temperature 30 120 Tj VR 50 140 0° 0.5 0.4 (V) (°C) VR DC Conduction angle α Tj = 150°C 300° 240° 180° 120° 60° 0.2 0.1 0 4 8 12 16 Reverse voltage 5 (typ.) Rectangular waveform 360° 0.3 0 160 100 0.6 (W) (mA) 10 0.7 PR (AV) Average reverse power dissipation Pulse test 0.1 10 PR (AV) – VR 0.8 0.01 5 Reverse voltage 100 Reverse current IR (typ.) 1000 Junction capacitance Peak surge forward current IFSM (A) 40 20 VR 24 28 (V) 2009-04-01 CRS15 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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