TOSHIBA 2SD2129_06

2SD2129
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (Darlington)
2SD2129
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
•
High DC current gain: hFE = 2000 (min)
•
Low saturation voltage: VCE (sat) = 1.5 V (max)
Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
7
V
DC
IC
3
Pulse
ICP
5
IB
0.5
Collector current
Base current
Ta = 25°C
Collector power
dissipation
PC
Tc = 25°C
Junction temperature
Storage temperature range
2.0
20
A
A
W
JEDEC
―
JEITA
Tj
150
°C
Tstg
−55 to 150
°C
TOSHIBA
SC-67
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
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2SD2129
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
―
―
100
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
―
―
2.5
mA
V (BR) CEO
IC = 30 mA, IB = 0
100
―
―
V
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Turn-on time
hFE (1)
VCE = 3 V, IC = 1.5 A
2000
―
15000
hFE (2)
VCE = 3 V, IC = 3 A
1000
―
―
VCE (sat) (1)
IC = 1.5 A, IB = 3 mA
―
―
1.5
VCE (sat) (2)
IC = 3 A, IB = 12 mA
―
―
2.0
VBE (sat)
IC = 1.5 A, IB = 3 mA
―
―
2.0
―
1.0
―
―
5.0
―
―
2.0
―
ton
Input
Storage time
20 μs
tstg
IB2
IB2
IB1
Switching time
Fall time
IB1
Output
20 Ω
Collector-emitter breakdown voltage
V
V
μs
VCC ≈ 30 V
tf
IB1 = −IB2 = 3 mA, duty cycle ≤ 1%
Marking
D2129
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SD2129
IC – VCE
IC – VBE
8
8
Common emitter
Common emitter
(A)
VCE = 3 V
6
2.5
5
Collector current IC
Collector current IC
(A)
Tc = 25°C
1.5
1
4
0.7
0.5
2
IB = 0.3 mA
6
4
Tc = 100°C
2
−55
25
0
0
2
4
6
8
Collector-emitter voltage
0
0
10
0.8
VCE (V)
1.6
Base-emitter voltage
hFE – IC
1000
VCE (V)
Collector-emitter voltage
DC current gain hFE
Tc = 100°C
25
−55
500
300
Common emitter
VCE = 3 V
0.1
0.3
0.5
1
Collector current IC
3
5
IC = 5 A
1.6
3
1.2
1
0.8
0.1
0.4
Common emitter
Tc = 25°C
0.3 0.5
(A)
1
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter saturation voltage
VCE (sat) (V)
IC/IB = 250
3
Tc = −55°C
25
100
0.3
0.5
1
Collector current IC
5
10
30 50 100
300
VBE (sat) – IC
Common emitter
5
3
Base current IB (mA)
VCE (sat) – IC
0.5
0.1
VBE (V)
2.0
0
0.1
10
10
1
4.0
2.4
5000
100
0.05
3.2
VCE – IB
10000
3000
2.4
3
5
10
(A)
10
Common emitter
IC/IB = 250
5
3
Tc = −55°C
25
1
100
0.5
0.1
0.3
0.5
1
Collector current IC
3
3
5
10
(A)
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2SD2129
rth – tw
Transient thermal resistance rth (°C/W)
100
(1) No heat sink Ta = 25°C
(1)
30 (2) Infinite heat sink Tc = 25°C
10
(2)
3
1
0.3
0.1
0.001
0.1
0.01
1
Pulse width
10
tw
100
(s)
Safe Operating Area
PC – Ta
25
100 μs*
IC max (continuous)
1 ms*
PC
3
IC max (pulsed)*
Collector power dissipation
Collector current IC
(A)
10 ms*
1
(1) Tc = Ta
Infinite heat sink
(W)
10
5
1000
DC operation
Tc = 25°C
0.5
0.3
0.1
20
0.03 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
VCEO max
with increase in temperature.
0.01
1
3
5
10
30 50
100
(2) No heat sink
15
10
5
(2)
0
0
0.05
(1)
25
50
75
100
125
150
175
Ambient temperature Ta (°C)
300
Collector-emitter voltage VCE (V)
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2SD2129
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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