2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.) • Complementary to 2SC3515 • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −300 V Collector-emitter voltage VCEO −300 V Emitter-base voltage VEBO −8 V Collector current IC −100 mA JEDEC Base current IB −20 mA JEITA SC-62 PC 500 TOSHIBA 2-5K1A Collector power dissipation PC (Note 1) Junction temperature Storage temperature range 1000 mW Tj 150 °C Tstg −55 to 150 °C PW-MINI ― Weight: 0.05 g (typ.) Note 1: 2SA1384 mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1384 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −300 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −8 V, IC = 0 ― ― −0.1 μA Collector-base breakdown voltage V (BR) CBO IC = −0.1 mA, IE = 0 −300 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −1 mA, IB = 0 −300 ― ― V VCE = −10 V, IC = −20 mA 30 ― 150 hFE (2) VCE = −10 V, IC = −1 mA 20 ― ― Collector-emitter saturation voltage VCE (sat) IC = −20 mA, IB = −2 mA ― ― −0.5 V Base-emitter saturation voltage VBE (sat) IC = −20 mA, IB = −2 mA ― ― −1.0 V VCE = −10 V, IC = −20 mA 50 70 ― MHz VCB = −20 V, IE = 0, f = 1 MHz ― 6 8 pF hFE (1) DC current gain (Note 3) Transition frequency Collector output capacitance fT Cob Note 3: hFE (1) classification R: 30 to 90, O: 50 to 150 Marking Part No. (or abbreviation code) J Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1384 IC – VCE (low voltage region) IC – VCE (low voltage region) −100 −100 −10 Common emitter Ta = 100°C −3 −5 −2 (mA) −80 −1 −0.8 −60 Collector current IC Collector current IC (mA) Common emitter Ta = 25°C −0.6 −0.4 −40 −0.3 −0.2 −20 −10 −5 −80 −3 −2 −1 −60 −0.5 −0.3 −40 −0.2 −20 IB = −0.1 mA IB = −0.1 mA 0 0 0 −2 −4 −6 −8 −10 Collector-emitter voltage −12 0 0 −14 0 −2 VCE (V) −4 −5 −3 Common emitter Ta = −55°C −2 −100 (mA) −80 −60 −1 −0.8 −40 −20 0 0 0 −2 −4 −6 −8 −0.6 −0.5 −0.4 −0.3 −0.2 IB = −0.1 mA −10 Collector-emitter voltage −12 −80 −14 VCE (V) Common emitter Ta = 25°C −70 −90 Collector current IC (mA) Collector current IC −12 −10 −10 −8 −60 −50 −6 −40 −4 −30 −20 −2 IB = −10 μA 0 0 0 −14 VCE (V) −40 −80 −120 −160 Collector-emitter voltage IC – VCE (low current region) −200 −240 −280 VCE (V) IC – VCE (low current region) −10 −10 −70 −60 Common emitter Ta = 100°C −50 −8 Common emitter Ta = −55°C −6 (mA) −40 Collector current IC (mA) −10 IC – VCE (Low current region) −100 Collector current IC −8 Collector-emitter voltage IC – VCE (low voltage region) −30 −4 −20 −2 0 0 −6 IB = −10 μA 0 −40 −80 −120 −160 Collector-emitter voltage −200 −240 −8 −80 VCE (V) −70 −4 −60 −50 −40 −2 0 0 −280 −100 −90 −6 0 −40 −80 −120 −160 Collector-emitter voltage 3 −30 −20 IB = −10 μA −200 −240 −280 VCE (V) 2006-11-09 2SA1384 hFE – IC hFE – IC 1000 Common emitter 300 Common emitter 500 Ta = 25°C DC current gain hFE DC current gain hFE 500 VCE = −10 V 100 50 −5 30 −1 10 −0.1 −0.3 −1 −3 −10 Collector current IC −30 VCE = −10 V 300 Ta = 100°C 100 25 50 −55 30 −100 10 −0.1 (mA) −0.3 −1 −3 −10 Collector current IC −100 (mA) VBE (sat) – IC VCE (sat) – IC −10 Base-emitter saturation voltage VBE (sat) (V) −5 Collector-emitter saturation voltage VCE (sat) (V) −30 −3 Common emitter IC/IB = 10 −1 −0.5 −0.3 Ta = 100°C −0.1 25 −55 −0.05 −0.03 −0.1 −0.3 −1 Common emitter −5 −10 Collector current IC −30 Ta = −55°C −1 −0.5 25 100 −0.3 −0.1 −0.1 −3 IC/IB = 10 −3 −0.3 −100 −1 −3 −10 Collector current IC −30 −100 (mA) (mA) fT – IC Common emitter 300 Ta = 25°C 100 VCE = −20 V 50 −10 −5 30 10 −0.3 −1 −3 Collector current IC −10 −30 Collector input capacitance Cib (pF) Collector output capacitance Cob (pF) Transition frequency fT (MHz) 500 (mA) Cib, Cob – VR 300 f = 1 MHz Ta = 25°C 100 50 Cib (IC = 0) 30 10 Cob (IE = 0) 5 3 1 0.1 0.3 1 3 10 Reverse voltage 4 30 VR 100 300 (V) 2006-11-09 2SA1384 PC – Ta Safe Operating Area −500 1.0 ① (1) Mounted on ceramic substrate 2 (250 mm × 0.8 t) −300 (2) No heat sink −100 0.6 (mA) 0.8 ② Collector current IC Collector power dissipation PC (W) 1.2 0.4 0.2 0 0 20 40 60 80 100 120 140 160 IC max (pulse) 10 ms* IC max (continuous) 1 ms* 100 ms* −50 −30 −10 DC operation Ta = 25°C −5 −3 −1 *: Single no repetitive pulse Ta = 25°C Curves must be derated linearly −0.3 with increase in temperature. Tested without a substrate. VCEO max −0.1 −1 −3 −10 −30 −100 −300 −0.5 Ambient temperature Ta (°C) Collector-emitter voltage 5 −1000 VCE (V) 2006-11-09 2SA1384 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-09