RN2907AFS~RN2909AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2907AFS, RN2908AFS, RN2909AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly costs. R2 B R1 2 5 3 4 0.48 Equivalent Circuit and Bias Resistor Values C 6 0.1±0.05 Complementary to the RN1907AFS to RN1909AFS 1 +0.02 -0.04 • 0.35 0.35 • 1.0±0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 0.7±0.05 • Type No. R1 (kΩ) R2 (kΩ) RN2907AFS 10 47 RN2908AFS 22 47 RN2909AFS 47 22 1. EMITTER1 2. BASE1 3. COLLECTOR2 4. EMITTER2 5. BASE2 6. COLLECTOR1 fS6 E 0.1±0.05 0.15±0.05 0.8±0.05 0.1±0.05 JEDEC ― JEITA ― TOSHIBA (E1) (B1) (C2) (E2) (B2) (C1) 2-1F1D Weight: 1 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristic Collector-base voltage Collector-emitter voltage RN2907AFS to RN2909AFS Symbol Rating Unit VCBO −50 V VCEO −50 V RN2908AFS VEBO Junction temperature Storage temperature range −7 V IC −80 mA PC (Note 1) 50 mW Tj 150 °C Tstg −55 to 150 °C Collector current RN2907AFS to RN2909AFS 5 4 Q2 Q1 −15 RN2909AFS Collector power dissipation 6 −6 RN2907AFS Emitter-base voltage Equivalent Circuit (top view) 1 2 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 1 2010-05-14 RN2907AFS~RN2909AFS Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Collector cutoff current Symbol ⎯ −100 ICEO VCE = −50 V, IB = 0 ⎯ ⎯ −500 VEB = −6 V, IC = 0 −0.088 ⎯ −0.131 VEB = −7 V, IC = 0 −0.085 ⎯ −0.126 VEB = −15 V, IC = 0 −0.182 ⎯ −0.271 80 ⎯ ⎯ 80 ⎯ ⎯ 70 ⎯ ⎯ ⎯ ⎯ −0.15 −0.8 ⎯ −1.8 −1.0 ⎯ −3.0 RN2909AFS −2.0 ⎯ −6.4 RN2907AFS −0.6 ⎯ −0.9 −0.7 ⎯ −1.2 −1.5 ⎯ −2.6 ⎯ 0.9 ⎯ 8 10 12 17.6 22 26.4 RN2909AFS 37.6 47 56.4 RN2907AFS 0.17 0.213 0.255 0.374 0.468 0.562 1.71 2.14 2.56 RN2908AFS IEBO RN2908AFS hFE VCE = −5 V, IC = −10 mA VCE (sat) IC = −5 mA, IB = −0.25 mA VI (ON) VCE = −0.2 V, IC = −5 mA RN2909AFS RN2907AFS to 2909AFS RN2907AFS Input voltage (ON) Input voltage (OFF) RN2908AFS RN2908AFS VI (OFF) VCE = −5 V, IC = −0.1 mA RN2909AFS Collector output capacitance RN2907AFS to 2909AFS Cob VCB = −10 V, IE = 0, f = 1 MHz RN2907AFS Input resistor Resistor ratio Max ⎯ RN2907AFS Collector-emitter saturation voltage Typ. VCB = −50 V, IE = 0 RN2909AFS DC current gain Min ICBO RN2907AFS to 2909AFS RN2907AFS Emitter cutoff current Test Condition RN2908AFS RN2908AFS R1 R1/R2 RN2909AFS 2 ⎯ ⎯ Unit nA mA ⎯ V V V pF kΩ ⎯ 2010-05-14 RN2907AFS~RN2909AFS IC - VI (ON) RN2907AFS -10000 COMMON EMITTER VCE = -0.2 V (μA） COLLECTOR CURRENT IC (uA) COLLECTOR CURRENT IC (mA) -100 -10 Ta = 100°C 25 -1 -25 -0.1 -0.1 -1 -10 COMMON EMITTER VCE = -5 V -1000 Ta = 100°C -10 -0.2 -100 -0.4 RN2908AFS -0.8 -1 -1.2 -1.4 IC - VI (OFF) -10000 COMMON EMITTER VCE = -0.2 V (μA） COLLECTOR CURRENT IC (uA) COLLECTOR CURRENT IC (mA) -100 -10 Ta = 100°C 25 -1 -25 -0.1 -0.1 -1 -10 COMMON EMITTER VCE = -5 V -1000 Ta = 100°C -100 -10 -0.4 -100 -0.6 -1 -1.2 -1.4 -1.6 RN2909AFS IC - VI (OFF) -10000 COLLECTOR CURRENT IC (μA (uA)） COMMON EMITTER VCE = -0.2 V -10 Ta = 100°C 25 -1 -25 -0.1 -0.1 -0.8 INPUT VOLTAGE VI (OFF) (V) IC - VI (ON) RN2909AFS -25 25 INPUT VOLTAGE VI (ON) (V) COLLECTOR CURRENT IC (mA) -0.6 INPUT VOLTAGE VI (OFF) (V) IC - VI (ON) RN2908AFS -25 25 -100 INPUT VOLTAGE VI (ON) (V) -100 IC - VI (OFF) RN2907AFS -1 -10 COMMON EMITTER VCE = -5 V -1000 Ta = 100°C INPUT VOLTAGE VI (ON) (V) -25 -100 -10 -0.5 -100 25 -1 -1.5 -2 -2.5 -3 -3.5 INPUT VOLTAGE VI (OFF) (V) 3 2010-05-14 RN2907AFS~RN2909AFS RN2907AFS hFE - IC RN2907AFS COMMON EMITTER VCE = -5 V Ta = 100°C 100 -25 25 10 -10 COLLECTOR CURRENT IC (mA) Ta = 100°C -0.1 25 -25 RN2908AFS -100 -1 -10 -100 COLLECTOR CURRENT IC (mA) hFE - IC RN2908AFS 1000 VCE (sat) - IC -1 COMMON EMITTER VCE = -5 V Ta = 100°C 100 -25 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) DC CURRENT GAIN hFE COMMON EMITTER IC / IB = 20 -0.01 -1 25 10 COMMON EMITTER IC / IB = 20 Ta = 100°C -0.1 -25 25 -0.01 -1 -10 -100 -1 COLLECTOR CURRENT IC (mA) RN2909AFS -10 -100 COLLECTOR CURRENT IC (mA) hFE- IC RN2909AFS 1000 VCE (sat) - IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) COMMON EMITTER VCE = -5 V DC CURRENT GAIN hFE VCE (sat) - IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) DC CURRENT GAIN hFE 1000 Ta = 100°C 100 25 -25 10 COMMON EMITTER IC / IB = 20 Ta = 100°C -0.1 -25 25 -0.01 -1 -10 -100 -1 COLLECTOR CURRENT IC (mA) -10 -100 COLLECTOR CURRENT IC (mA) 4 2010-05-14 RN2907AFS~RN2909AFS Marking Type Name Marking 6 RN2907AFS 5 4 Type Name D6 1 2 3 6 5 4 RN2908AFS Type Name D7 1 2 3 6 5 4 RN2909AFS Type Name D8 1 2 3 5 2010-05-14 RN2907AFS~RN2909AFS RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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