RN2107ACT~RN2109ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107ACT,RN2108ACT,RN2109ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Top View 0.6±0.05 • Extra small package (CST3) is applicable for extra high density fabrication. • Incorporating a bias resistor into a transistor reduces parts count. 0.05±0.03 0.25±0.03 0.5±0.03 1.0±0.05 0.65±0.02 ３ • Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN1107ACT to RN1109ACT ２ 0.25±0.03 １ 0.35±0.02 0.05±0.03 0.15±0.03 C R1 R2 B 0.38 +0.02 -0.03 Equivalent Circuit and Bias Resistor Values 1.BASE 2.EMITTER 3.COLLECOTR Type No. R1 (kΩ) R2 (kΩ) RN2107ACT 10 47 RN2108ACT 22 47 JEDEC ― RN2109ACT 47 22 JEITA ― CST3 TOSHIBA E Weight: 2-1J1A 0.75 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage RN2107ACT to RN2109ACT Symbol Rating Unit VCBO −50 V VCEO −50 V −6 RN2107ACT Emitter-base voltage RN2108ACT VEBO Collector power dissipation Junction temperature RN2107ACT to RN2109ACT Storage temperature range V −15 RN2109ACT Collector current −7 IC −80 mA PC 100* mW Tj 150 °C Tstg −55 to 150 °C * : Mounted on FR4 board (10 mm × 10 mm × 1 mm) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-04-06 RN2107ACT~RN2109ACT Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Symbol ⎯ −100 ICEO VCE = −50 V, IB = 0 ⎯ ⎯ −500 VEB = −6 V, IC = 0 −0.088 ⎯ −0.131 VEB = −7 V, IC = 0 −0.085 ⎯ −0.126 VEB = −15 V, IC = 0 −0.182 ⎯ −0.271 80 ⎯ ⎯ 80 ⎯ ⎯ 70 ⎯ ⎯ ⎯ ⎯ −0.15 −0.8 ⎯ −1.8 −1.0 ⎯ −3.0 −2.0 ⎯ −6.4 −0.6 ⎯ −0.9 −0.7 ⎯ −1.2 −1.5 ⎯ −2.6 ⎯ 0.9 ⎯ 8 10 12 17.6 22 26.4 RN2109ACT 37.6 47 56.4 RN2107ACT 0.17 0.213 0.255 0.374 0.468 0.562 1.71 2.14 2.56 RN2108ACT IEBO RN2108ACT hFE RN2109ACT RN2107ACT to 2109ACT VCE (sat) RN2107ACT Input voltage (ON) RN2108ACT VI (ON) VCE = −5 V, IC = −10 mA IC = −5 mA, IB = −0.25 mA VCE = −0.2 V, IC = −5 mA RN2109ACT RN2107ACT Input voltage (OFF) RN2108ACT VI (OFF) VCE = −5 V, IC = −0.1 mA, RN2109ACT Collector output capacitance RN2107ACT to 2109ACT Cob VCB = −10 V, IE = 0, f = 1 MHz RN2107ACT Input resistor Resistor ratio Max ⎯ RN2107ACT Collector-emitter saturation voltage Typ. VCB = −50 V, IE = 0 RN2109ACT DC current gain Min ICBO RN2107ACT to 2109ACT RN2107ACT Emitter cut-off current Test Condition RN2108ACT RN2108ACT R1 R1/R2 RN2109ACT 2 ⎯ ⎯ Unit nA mA ⎯ V V V pF kΩ ⎯ 2010-04-06 RN2107ACT~RN2109ACT IC - VI (ON) RN2107ACT COLLECTOR CURRENT IC (uA) COLLECTOR CURRENT IC (mA) -10000 COMMON EMITTER VCE = -0.2V -10 Ta=100°C 25 -1 -25 -0.1 -0.1 -1 -10 COMMON EMITTER VCE = -5V -1000 Ta=100°C -10 -0.2 -100 -0.4 RN2108ACT -0.8 -1 -1.2 -1.4 IC - VI (OFF) -10000 COMMON EMITTER VCE = -0.2V COLLECTOR CURRENT IC (uA) COLLECTOR CURRENT IC (mA) -100 -10 Ta=100°C 25 -1 -25 -0.1 -0.1 -1 -10 COMMON EMITTER VCE = -5V -1000 Ta=100°C -100 -10 -0.4 -100 -0.6 -1 -1.2 -1.4 -1.6 RN2109ACT IC - VI (OFF) -10000 COLLECTOR CURRENT IC (uA) COMMON EMITTER VCE = -0.2V -10 Ta=100°C 25 -1 -25 -0.1 -0.1 -0.8 INPUT VOLTAGE VI (OFF) (V) IC - VI (ON) RN2109ACT -25 25 INPUT VOLTAGE VI (ON) (V) COLLECTOR CURRENT IC (mA) -0.6 INPUT VOLTAGE VI (OFF) (V) IC - VI (ON) RN2108ACT -25 25 -100 INPUT VOLTAGE VI (ON) (V) -100 IC - VI (OFF) RN2107ACT -100 -1 -10 COMMON EMITTER VCE = -5V -1000 Ta=100°C INPUT VOLTAGE VI (ON) (V) -25 -100 -10 -0.5 -100 25 -1 -1.5 -2 -2.5 -3 -3.5 INPUT VOLTAGE VI (OFF) (V) 3 2010-04-06 RN2107ACT~RN2109ACT RN2107ACT hFE - IC RN2107ACT COMMON EMITTER VCE = -5V Ta=100°C 100 -25 25 10 -10 COLLECTOR CURRENT IC (mA) Ta=100°C -0.1 25 -25 RN2108ACT -100 -1 -10 -100 COLLECTOR CURRENT IC (mA) hFE - IC RN2108ACT 1000 VCE (sat) - IC -1 COMMON EMITTER VCE = -5V Ta=100°C 100 -25 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) DC CURRENT GAIN hFE COMMON EMITTER IC / IB = 20 -0.01 -1 25 10 COMMON EMITTER IC / IB = 20 Ta=100°C -0.1 -25 25 -0.01 -1 -10 -100 -1 COLLECTOR CURRENT IC (mA) RN2109ACT -10 -100 COLLECTOR CURRENT IC (mA) hFE- IC RN2109ACT 1000 VCE (sat) - IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) COMMON EMITTER VCE = -5V DC CURRENT GAIN hFE VCE (sat) - IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) DC CURRENT GAIN hFE 1000 Ta=100°C 100 25 -25 10 COMMON EMITTER IC / IB = 20 Ta=100°C -0.1 -25 25 -0.01 -1 -10 -100 -1 COLLECTOR CURRENT IC (mA) -10 -100 COLLECTOR CURRENT IC (mA) 4 2010-04-06 RN2107ACT~RN2109ACT Type Name Marking Type Name RN2107ACT 1 C6 3 2 Type Name RN2108ACT 1 C7 3 2 Type Name RN2109ACT 1 C8 3 2 5 2010-04-06 RN2107ACT~RN2109ACT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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