TOSHIBA RN2106MFV

RN2101MFV∼RN2106MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101MFV,RN2102MFV,RN2103MFV
RN2104MFV,RN2105MFV,RN2106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
0.22 ± 0.05
0.32 ± 0.05
0.80 ± 0.05
0.4
1
1
0.4
0.8 ± 0.05
z A wide range of resistor values is available for use in various circuits.
z Complementary to the RN1101MFV to RN1106MFV
1.2 ± 0.05
z Ultra-small package, suited to very high density mounting
z Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and lowering
assembly cost.
1.2 ± 0.05
3
Type No.
R1 (kΩ)
R2 (kΩ)
RN2101MFV
4.7
4.7
RN2102MFV
10
10
RN2103MFV
22
22
RN2104MFV
47
47
RN2105MFV
2.2
47
RN2106MFV
4.7
47
0.5 ± 0.05
Equivalent Circuit and Bias Resistor Values
1. BASE
VESM
Characteristic
RN2101MFV to 2106MFV
Collector-emitter voltage
RN2101MFV to 2104MFV
Emitter-base voltage
RN2105MFV, 2106MFV
Symbol
Rating
Unit
VCBO
−50
V
VCEO
−50
V
VEBO
Junction temperature
RN2101MFV to 2106MFV
Storage temperature range
−5
V
mA
PC(Note 1)
150
mW
Tj
150
°C
Tstg
−55 to 150
°C
IC
Collector power dissipation
−10
−100
Collector current
2. EMITTER
3. COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Collector-base voltage
0.13 ± 0.05
2
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Land Pattern Example
Unit:mm
0.5
0.45
1.15
0.4
0.45
0.4
0.4
1
2010-04-06
RN2101MFV∼RN2106MFV
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff
current
Test
Circuit
Min
Typ.
Max
VCB = −50 V, IE = 0
―
―
−100
VCE = −50 V, IB = 0
―
―
−500
−0.82
―
−1.52
−0.38
―
−0.71
−0.17
―
−0.33
−0.082
―
−0.15
−0.078
―
−0.145
−0.074
―
−0.138
RN2101MFV
30
―
―
RN2102MFV
50
―
―
70
―
―
80
―
―
RN2105MFV
80
―
―
RN2106MFV
80
―
―
―
−0.1
−0.3
RN2101MFV
−1.1
―
−2.0
RN2102MFV
−1.2
―
−2.4
−1.3
―
−3.0
−1.5
―
−5.0
RN2105MFV
−0.6
―
−1.1
RN2106MFV
−0.7
―
−1.3
−1.0
―
−1.5
−0.5
―
−0.8
―
250
―
MHz
―
0.9
―
pF
RN2101MFV
3.29
4.7
6.11
RN2102MFV
7
10
13
15.4
22
28.6
32.9
47
61.1
RN2105MFV
1.54
2.2
2.86
RN2106MFV
3.29
4.7
6.11
RN2101MFV to
2104MFV
0.8
1.0
1.2
0.0376
0.0468
0.0562
0.08
0.1
0.12
RN2101MFV to
2106MFV
Symbol
ICBO
―
ICEO
Test Condition
RN2101MFV
RN2102MFV
Emitter cutoff current
RN2103MFV
RN2104MFV
VEB = −10 V, IC = 0
IEBO
―
RN2105MFV
VEB = −5 V, IC = 0
RN2106MFV
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
RN2103MFV
RN2104MFV
RN2101MFV to
2106MFV
RN2103MFV
RN2104MFV
RN2101MFV to
2104MFV
RN2105MFV,
2106MFV
hFE
VCE (sat)
VI (ON)
VI (OFF)
―
―
―
―
Transition frequency
RN2101MFV to
2106MFV
fT
―
Collector output
capacitance
RN2101MFV to
2106MFV
Cob
―
Input resistor
Resistor ratio
RN2103MFV
RN2104MFV
RN2105MFV
R1
R1/R2
―
―
RN2106MFV
2
VCE = −5 V,
IC = −10 mA
IC = −5 mA,
IB = −0.5 mA
VCE = −0.2 V,
IC = −5 mA
VCE = −5 V,
IC = −0.1 mA
VCE = −10V,
IC = −5mA
VCB = −10 V, IE = 0,
f = 1 MHz
Unit
nA
mA
―
V
V
V
kΩ
―
2010-04-06
RN2101MFV∼RN2106MFV
RN2101MFV
RN2102MFV
IC - VI(ON)
Ta = 100°C
-10
25
-1
-25
EMMITER COMMON
VCE = -0.2V
-0.1
-0.1
-1
-10
-10
Ta = 100°C
25
-1
-25
EMMITER COMMON
VCE = -0.2V
-0.1
-0.1
-100
INPUT VOLTAGE VI(ON) ( V)
RN2103MFV
RN2104MFV
IC - VI(ON)
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Ta = 100°C
25
-1
-25
EMMITER COMMON
VCE = -0.2V
-1
-10
-10
IC - VI(ON)
25
-1
-25
EMMITER COMMON
VCE = -0.2V
-0.1
-0.1
-100
-1
-10
-100
INPUT VOLTAGE　VI(ON) ( V)
RN2106MFV
IC - VI(ON)
IC - VI(ON)
-100
COLLECTOR CURRENT IC (mA)
-100
Ta = 100°C
-10
25
-1
-25
EMMITER COMMON
VCE = -0.2V
-0.1
-0.1
-100
Ta = 100°C
INPUT VOLTAGE VI(ON) ( V)
RN2105MFV
-10
-100
-10
-0.1
-0.1
-1
INPUT VOLTAGE VI(ON) ( V)
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
-100
-1
-10
Ta = 100°C
-10
25
-1
EMMITER COMMON
VCE = -0.2V
-0.1
-0.1
-100
INPUT VOLTAGE VI(ON) ( V)
-25
-1
-10
-100
INPUT VOLTAGE　VI(ON) ( V)
3
2010-04-06
RN2101MFV∼RN2106MFV
RN2101MFV
RN2102MFV
IC - VI (OFF)
EMITTER
COMMON
VCE = -5 V
-1000
Ta = 100°C
25
-25
-100
-10
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-1000
Ta = 100°C
25
EMITTER
COMMON
VCE = -5V
-10
-0.4
-2
RN2103MFV
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
INPUT VOLTAGE　VI (OFF) ( V)
RN2104MFV
IC - VI (OFF)
-10000
IC - VI (OFF)
-10000
EMITTER
COMMON
VCE = -5 V
-1000
COLLECTOR CURRENT IC (μA)
COLLECTOR CURRENT IC (μA)
-25
-100
INPUT VOLTAGE　VI (OFF) ( V)
Ta = 100°C
25
-25
-100
-10
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-1000
Ta = 100°C
25
EMITTER
COMMON
VCE = -5V
-10
-0.4
-2
RN2105MFV
-25
-100
-0.6
INPUT VOLTAGE　VI (OFF) ( V)
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
INPUT VOLTAGE VI (OFF) ( V)
RN2106MFV
IC - VI (OFF)
-10000
IC - VI (OFF)
-10000
EMITTER
COMMON
VCE = -5 V
COLLECTOR CURRENT IC (μA)
COLLECTOR CURRENT IC (μA)
IC - VI (OFF)
-10000
COLLECTOR CURRENT IC (μA)
COLLECTOR CURRENT IC (μA)
-10000
-1000
Ta = 100°C
25
-25
-100
-10
-1000
Ta = 100°C
25
-25
-100
EMITTER
COMMON
VCE = -5V
-10
0
-0
-0.2 -0.4 -0.6 -0.8
-1
-1.2
INPUT VOLTAGE　VI (OFF) ( V)
0
-0
-1.4
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE VI (OFF) ( V)
4
2010-04-06
RN2101MFV∼RN2106MFV
RN2101MFV
RN2102MFV
hFE - IC
hFE - IC
1000
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
1000
Ta = 100°C
100
25
-25
10
Ta = 100°C
100
25
-25
EMITTER COMMON
VCE = -5 V
EMITTER COMMON
VCE = -5 V
1
10
-1
-10
-100
-1
COLLECTOR CURRENT　IC (mA)
RN2103MFV
RN2963FS
-10
-100
COLLECTOR CURRENT　IC (mA)
RN2104MFV
hFE - IC
1000
hFE - IC
1000
Ta = 100°C
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
Ta = 100°C
25
100
-25
EMITTER COMMON
VCE = -5 V
25
-25
100
EMITTER COMMON
VCE = -5 V
10
10
-1
-10
-100
-1
COLLECTOR CURRENT　IC (mA)
1000
RN2105MFV
-10
-100
COLLECTOR CURRENT　IC (mA)
hFE - IC
1000
RN2106MFV
hFE - IC
Ta = 100°C
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
Ta = 100°C
25
-25
100
EMITTER COMMON
VCE = -5 V
10
25
-25
100
EMITTER COMMON
VCE = -5 V
10
-1
-10
-100
-1
COLLECTOR CURRENT　IC (mA)
-10
-100
COLLECTOR CURRENT IC (mA)
5
2010-04-06
RN2101MFV∼RN2106MFV
RN2101MFV
VCE(sat) - IC
RN2102MFV
-1
COMMON EMITTER
IC / IB = 10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
-1
Ta = 100°C
-0.1
25
-25
-0.01
COMMON EMITTER
IC / IB = 10
Ta = 100°C
-0.1
25
-25
-0.01
-1
-10
-100
-1
COLLECTOR CURRENT IC (mA)
RN2103MFV
VCE(sat) - IC
COMMON EMITTER
IC / IB = 10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
RN2104MFV
-1
Ta = 100°C
-0.1
25
-25
-10
-100
COLLECTOR CURRENT IC (mA)
-1
VCE(sat) - IC
COMMON EMITTER
IC / IB = 10
Ta = 100°C
-0.1
25
-25
-0.01
-0.01
-1
-10
-1
-100
RN2105MFV
VCE(sat) - IC
-1
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMITTER
IC / IB = 10
Ta = 100°C
-0.1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
VCE(sat) - IC
25
-25
RN2106MFV
VCE(sat) - IC
COMMON EMITTER
IC / IB = 10
Ta = 100°C
-0.1
-25
25
-0.01
-0.01
-1
-10
-1
-100
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
6
2010-04-06
RN2101MFV∼RN2106MFV
Type Name
Marking
RN2101MFV
RN2102MFV
RN2103MFV
RN2104MFV
RN2105MFV
RN2106MFV
7
2010-04-06
RN2101MFV∼RN2106MFV
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
8
2010-04-06