2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 200 to 500 (IC = −0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) • High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V DC IC −2.0 Pulse ICP −3.5 IB −200 PC 2.5 (Note 1) 1.0 Tj 150 °C Tstg −55 to 150 °C Collector current Base current Collector power dissipation t = 10 s Junction temperature Storage temperature range DC A JEDEC ― mA JEITA SC-62 W TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 2 Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 2SA2060 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −100 nA V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V hFE (1) VCE = −2 V, IC = −0.3 A 200 ― 500 hFE (2) VCE = −2 V, IC = −1.0 A 100 ― ― Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage VCE (sat) IC = −1.0 A, IB = −0.033 A ― ― −0.2 V Base-emitter saturation voltage VBE (sat) IC = −1.0 A, IB = −0.033 A ― ― −1.1 V VCB = −10 V, IE = 0, f = 1 MHz ― 20 ― pF See Figure 1 circuit diagram. ― 60 ― VCC ≈ −30 V, RL = 30 Ω ― 250 ― IB1 = 33 mA,IB2 = 33 mA ― 90 ― Collector output capacitance Cob Rise time Switching time tr Storage time tstg Fall time tf ns Marking VCC IB2 Input IB1 IB1 Part No. (or abbreviation code) 4 RL 20 μs Output G Note 3 IB2 Lot No. Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart Note 3: A line to the right of a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SA2060 IC – VCE −3 −80 −40 −60 −30 −2.4 −20 Ta = 100°C 1000 −1.8 DC current gain hFE Collector current IC (A) −100 hFE – IC 10000 −10 −6 −1.2 −4 IB = −2 mA −0.6 Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 −0.4 −0.8 −1.2 −1.6 −2 25 100 −55 10 Common emitter VCE = −2 V Single nonrepetitive pulse −2.4 1 −0.001 Collector-emitter voltage VCE (V) −0.01 −0.1 Collector current IC VCE (sat) – IC Common emitter IC/IB = 30 Single nonrepetitive pulse Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −10 −0.1 Ta = 100°C −55 25 −0.001 −0.001 −0.01 −0.1 −1 Collector current IC −10 (A) VBE (sat) – IC −1 −0.01 −1 Common emitter IC/IB = 30 Single nonrepetitive pulse −55 Ta = 100°C −0.1 −0.001 −10 (A) 25 −1 −0.01 −0.1 Collector current IC −1 −10 (A) IC – VBE −3 Collector current IC (A) Common emitter VCE = −2 V −2.4 Single nonrepetitive pulse −1.8 −1.2 Ta = 100°C 25 −0.6 0 0 −0.2 −0.4 −0.6 Base-emitter voltage −0.8 −55 −1 −1.2 VBE (V) 3 2009-12-21 2SA2060 rth – tw Transient thermal resistance rth (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe Operating Area −10 IC max (pulsed) ♦ 10 ms♦ 1 ms♦100 μs♦ 10 μs♦ −1 100 ms♦* DC operation * (Ta = 25°C) ♦: Single nonrepetitive pulse Ta = 25°C −0.1 Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −0.5 −1 −5 VCEO max Collector current IC (A) IC max (continuous) 10 s♦* −10 −50 −100 Collector-emitter voltage VCE (V) 4 2009-12-21 2SA2060 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2009-12-21