TOSHIBA TPCA8052-H

TPCA8052-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8052-H
Switching Regulator Applications
Motor Drive Applications
DC-DC Converter Applications
Unit: mm
1.27 0.4 ± 0.1
High-speed switching
•
Small gate charge: QSW = 6.8 nC (typ.)
•
Low drain-source ON-resistance: RDS (ON) = 7.2 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 58 S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
•
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
0.95 ± 0.05
Absolute Maximum Ratings (Ta = 25°C)
0.595
5.0 ± 0.2
0.05 S
S
4
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
40
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
20
Pulsed (Note 1)
IDP
60
PD
30
W
JEDEC
⎯
2.8
W
JEITA
⎯
Drain current
DC
Drain power dissipation
(Tc = 25℃)
A
Drain power dissipation
(t = 10 s)
(Note 2a)
PD
Drain power dissipation
(t = 10 s)
(Note 2b)
PD
1.6
W
Single-pulse avalanche energy
(Note 3)
EAS
37
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
EAR
2.24
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
4.25 ± 0.2
8
5
1,2,3:SOURCE
5,6,7,8:DRAIN
TOSHIBA
A
3.5 ± 0.2
1
0.6 ± 0.1
Characteristic
4
1
0.166 ± 0.05
•
0.15 ± 0.05
1.1 ± 0.2
Small footprint due to a small and thin package
0.8 ± 0.1
•
0.05 M A
5
5.0 ± 0.2
6.0 ± 0.3
8
4:GATE
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8
7
6
5
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
4
1
2
3
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Start of commercial production
2009-03
1
2013-11-01
TPCA8052-H
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
(Tc = 25℃)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-c)
4.17
°C/W
Rth (ch-a)
44.6
°C/W
Rth (ch-a)
78.1
°C/W
Marking (Note 5)
TPCA
8052-H
※
Part number
Lot No.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
(a)
Note 3: VDD = 24 V, Tch = 25 °C (initial), L = 100 μH, RG = 25 Ω, IAR = 20 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
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TPCA8052-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯
±100
nA
Drain cutoff current
IDSS
VDS = 40 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
40
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
23
⎯
⎯
Vth
VDS = 10 V, ID = 0.2 mA
1.3
⎯
2.3
VGS = 4.5 V, ID = 10 A
⎯
9.1
13.1
VGS = 10 V, ID = 10 A
⎯
7.2
11.3
VDS = 10 V, ID = 10 A
29
58
⎯
⎯
1620
2110
⎯
85
130
⎯
280
⎯
⎯
2.3
3.5
⎯
2.4
⎯
⎯
8.4
⎯
⎯
8.0
⎯
⎯
35
⎯
VDD ≈ 32 V, VGS = 10 V, ID = 20 A
⎯
25
⎯
VDD ≈ 32 V, VGS = 5 V, ID = 20 A
⎯
13
⎯
⎯
5.6
⎯
⎯
3.8
⎯
⎯
6.8
⎯
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Gate resistance
rg
VDS = 10 V, VGS = 0 V, f = 5 MHz
tr
VGS
Turn-on time
ton
Fall time
tf
Turn-off time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge 1
Qgs1
Gate-drain (“Miller”) charge
Qgd
Gate switch charge
QSW
0V
4.7 Ω
Switching time
ID = 10 A
VOUT
10 V
RL = 2.0 Ω
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD ≈ 20 V
Duty ≤ 1%, tw = 10 μs
VDD ≈ 32 V, VGS = 10 V, ID = 20 A
V
V
mΩ
S
pF
Ω
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
60
A
⎯
⎯
−1.2
V
VDSF
IDR = 20 A, VGS = 0 V
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TPCA8052-H
ID – VDS
ID – VDS
20
10
4
40
3
ID
3.6
4.5
3.3
3.4
12
Drain current
Drain current
ID
(A)
16
3.1
2.9
8
2.8
4
3.6
3.8
3.4
4.5
(A)
3.2
10
50
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
6
3.3
30
3.2
3.1
20
3
2.9
10
2.7
2.8
VGS = 2.6 V
0
0
0.2
0.4
0.8
0.6
Drain-source voltage
VDS
VGS = 2.7 V
0
0
1
(V)
0.4
0.8
ID – VGS
(V)
Common source
Ta = 25°C
Pulse test
0.4
VDS
Drain-source voltage
Drain current
ID
(A)
30
20
Ta = −55°C
10
100
25
0
1
2
3
Gate-source voltage
4
VGS
0.3
0.2
10
0.1
0
5
ID = 20 A
5
0
(V)
2
4
Drain-source ON-resistance
RDS (ON) (mΩ)
(S)
|Yfs|
100
Ta = −55°C
100
25
1
0.1
0.1
10
1
Drain current
ID
8
VGS
10
(V)
RDS (ON) – ID
100
Common source
VDS = 10 V
Pulse test
10
6
Gate-source voltage
⎪Yfs⎪ – ID
Forward transfer admittance
2
(V)
VDS – VGS
Common source
VDS = 10 V
Pulse test
1000
VDS
0.5
40
0
1.6
1.2
Drain-source voltage
(A)
VGS = 4.5 V
10
10
1
0.1
100
Common source
Ta = 25°C
Pulse test
4
10
1
Drain current
ID
100
(A)
2013-11-01
TPCA8052-H
RDS (ON) – Ta
IDR – VDS
20
100
(A)
IDR
16
ID = 5, 10, 20 A
Drain reverse current
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
Pulse test
12
ID = 5, 10, 20 A
VGS = 4.5 V
8
VGS = 10 V
4
0
−80
−40
0
40
80
Ambient temperature
120
Ta
10
4.5
10
2
1
1
VGS = 0 V
Common source
Ta = 25°C
Pulse test
0.1
0
160
3
(°C)
−0.2
−0.4
Drain-source voltage
Capacitance – VDS
−1
VDS
(V)
80
120
−1.2
Vth (V)
2.5
Ciss
Gate threshold voltage
1000
C
(pF)
−0.8
Vth – Ta
10000
Capacitance
−0.6
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
Crss
1
10
Drain-source voltage
100
VDS
(V)
2
1.5
1
Common source
0.5 V
DS = 10 V
ID = 0.2 mA
Pulse test
0
−80
−40
0
40
Ambient temperature
Ta
160
(°C)
20
40
16
VGS
VDS = 32 V
30
16
VDD = 32 V
20
16
10
0
12
8
Common source
ID = 20 A
Ta = 25°C
Pulse test
8
0
10
20
Total gate charge
30
Qg
8
4
Gate-source voltage
Drain-source voltage
VDS
(V)
50
(V)
Dynamic input/output
characteristics
0
40
(nC)
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TPCA8052-H
rth – tw
Transient thermal impedance
rth (°C/W)
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25℃
(2)
100
(1)
10
(3)
1
Single - pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
(s)
PD – Ta
(W)
2.0
Drain power dissipation
Drain power dissipation
PD
(1)
2.5
PD – Tc
40
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10 s
PD
(W)
3.0
(2)
1.5
1.0
0.5
0
0
40
1000
80
120
Ambient temperature
Ta
30
20
10
0
0
160
(°C)
40
80
Case temperature
120
TC
160
(°C)
Safe operating area
1000
100
ID max (Pulse) *
Drain current
ID
(A)
t = 1 ms*
10
t = 10 ms*
1
* Single-pulse
Ta = 25℃
0.1
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
Drain-source voltage
VDSS max
10
VDS
100
(V)
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2013-11-01
TPCA8052-H
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
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TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
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except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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