TPCA8052-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCA8052-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm 1.27 0.4 ± 0.1 High-speed switching • Small gate charge: QSW = 6.8 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7.2 mΩ (typ.) • High forward transfer admittance: |Yfs| = 58 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 0.95 ± 0.05 Absolute Maximum Ratings (Ta = 25°C) 0.595 5.0 ± 0.2 0.05 S S 4 Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 kΩ) VDGR 40 V Gate-source voltage VGSS ±20 V (Note 1) ID 20 Pulsed (Note 1) IDP 60 PD 30 W JEDEC ⎯ 2.8 W JEITA ⎯ Drain current DC Drain power dissipation (Tc = 25℃) A Drain power dissipation (t = 10 s) (Note 2a) PD Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single-pulse avalanche energy (Note 3) EAS 37 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Tc = 25℃) (Note 4) EAR 2.24 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 4.25 ± 0.2 8 5 1,2,3:SOURCE 5,6,7,8:DRAIN TOSHIBA A 3.5 ± 0.2 1 0.6 ± 0.1 Characteristic 4 1 0.166 ± 0.05 • 0.15 ± 0.05 1.1 ± 0.2 Small footprint due to a small and thin package 0.8 ± 0.1 • 0.05 M A 5 5.0 ± 0.2 6.0 ± 0.3 8 4:GATE 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 4 1 2 3 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2009-03 1 2013-11-01 TPCA8052-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc = 25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 4.17 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8052-H ※ Part number Lot No. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = 24 V, Tch = 25 °C (initial), L = 100 μH, RG = 25 Ω, IAR = 20 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2013-11-01 TPCA8052-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 40 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 40 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 23 ⎯ ⎯ Vth VDS = 10 V, ID = 0.2 mA 1.3 ⎯ 2.3 VGS = 4.5 V, ID = 10 A ⎯ 9.1 13.1 VGS = 10 V, ID = 10 A ⎯ 7.2 11.3 VDS = 10 V, ID = 10 A 29 58 ⎯ ⎯ 1620 2110 ⎯ 85 130 ⎯ 280 ⎯ ⎯ 2.3 3.5 ⎯ 2.4 ⎯ ⎯ 8.4 ⎯ ⎯ 8.0 ⎯ ⎯ 35 ⎯ VDD ≈ 32 V, VGS = 10 V, ID = 20 A ⎯ 25 ⎯ VDD ≈ 32 V, VGS = 5 V, ID = 20 A ⎯ 13 ⎯ ⎯ 5.6 ⎯ ⎯ 3.8 ⎯ ⎯ 6.8 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz tr VGS Turn-on time ton Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW 0V 4.7 Ω Switching time ID = 10 A VOUT 10 V RL = 2.0 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ≈ 20 V Duty ≤ 1%, tw = 10 μs VDD ≈ 32 V, VGS = 10 V, ID = 20 A V V mΩ S pF Ω ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 60 A ⎯ ⎯ −1.2 V VDSF IDR = 20 A, VGS = 0 V 3 2013-11-01 TPCA8052-H ID – VDS ID – VDS 20 10 4 40 3 ID 3.6 4.5 3.3 3.4 12 Drain current Drain current ID (A) 16 3.1 2.9 8 2.8 4 3.6 3.8 3.4 4.5 (A) 3.2 10 50 Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test 6 3.3 30 3.2 3.1 20 3 2.9 10 2.7 2.8 VGS = 2.6 V 0 0 0.2 0.4 0.8 0.6 Drain-source voltage VDS VGS = 2.7 V 0 0 1 (V) 0.4 0.8 ID – VGS (V) Common source Ta = 25°C Pulse test 0.4 VDS Drain-source voltage Drain current ID (A) 30 20 Ta = −55°C 10 100 25 0 1 2 3 Gate-source voltage 4 VGS 0.3 0.2 10 0.1 0 5 ID = 20 A 5 0 (V) 2 4 Drain-source ON-resistance RDS (ON) (mΩ) (S) |Yfs| 100 Ta = −55°C 100 25 1 0.1 0.1 10 1 Drain current ID 8 VGS 10 (V) RDS (ON) – ID 100 Common source VDS = 10 V Pulse test 10 6 Gate-source voltage ⎪Yfs⎪ – ID Forward transfer admittance 2 (V) VDS – VGS Common source VDS = 10 V Pulse test 1000 VDS 0.5 40 0 1.6 1.2 Drain-source voltage (A) VGS = 4.5 V 10 10 1 0.1 100 Common source Ta = 25°C Pulse test 4 10 1 Drain current ID 100 (A) 2013-11-01 TPCA8052-H RDS (ON) – Ta IDR – VDS 20 100 (A) IDR 16 ID = 5, 10, 20 A Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 12 ID = 5, 10, 20 A VGS = 4.5 V 8 VGS = 10 V 4 0 −80 −40 0 40 80 Ambient temperature 120 Ta 10 4.5 10 2 1 1 VGS = 0 V Common source Ta = 25°C Pulse test 0.1 0 160 3 (°C) −0.2 −0.4 Drain-source voltage Capacitance – VDS −1 VDS (V) 80 120 −1.2 Vth (V) 2.5 Ciss Gate threshold voltage 1000 C (pF) −0.8 Vth – Ta 10000 Capacitance −0.6 Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 Crss 1 10 Drain-source voltage 100 VDS (V) 2 1.5 1 Common source 0.5 V DS = 10 V ID = 0.2 mA Pulse test 0 −80 −40 0 40 Ambient temperature Ta 160 (°C) 20 40 16 VGS VDS = 32 V 30 16 VDD = 32 V 20 16 10 0 12 8 Common source ID = 20 A Ta = 25°C Pulse test 8 0 10 20 Total gate charge 30 Qg 8 4 Gate-source voltage Drain-source voltage VDS (V) 50 (V) Dynamic input/output characteristics 0 40 (nC) 5 2013-11-01 TPCA8052-H rth – tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc = 25℃ (2) 100 (1) 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 (s) PD – Ta (W) 2.0 Drain power dissipation Drain power dissipation PD (1) 2.5 PD – Tc 40 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s PD (W) 3.0 (2) 1.5 1.0 0.5 0 0 40 1000 80 120 Ambient temperature Ta 30 20 10 0 0 160 (°C) 40 80 Case temperature 120 TC 160 (°C) Safe operating area 1000 100 ID max (Pulse) * Drain current ID (A) t = 1 ms* 10 t = 10 ms* 1 * Single-pulse Ta = 25℃ 0.1 Curves must be derated linearly with increase in temperature. 0.01 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2013-11-01 TPCA8052-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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