TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8053-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.7 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 14.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V Gate-source voltage VGSS ±20 V (Note 1) ID 9 Pulsed (Note 1) IDP 36 Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 29 mJ Avalanche current IAR 9 A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 0.06 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current DC A JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1B Weight: 0.085g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. 4 1 2 3 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-08-18 TPC8053-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8053 H Part No. (or abbreviation code) Lot No. Note Note: A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = 9 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2009-08-18 TPC8053-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 60 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 43 ⎯ ⎯ Vth VDS = 10 V, ID = 0.2 mA 1.3 ⎯ 2.3 VGS = 4.5 V, ID = 4.5 A ⎯ 15.8 24.2 VGS = 10 V, ID = 4.5 A ⎯ 14.1 22.5 VDS = 10 V, ID = 4.5 A 15 30 ⎯ ⎯ 1620 2110 ⎯ 60 90 ⎯ 200 ⎯ ⎯ 2.3 3.5 ⎯ 2.4 ⎯ ⎯ 9.1 ⎯ ⎯ 7.0 ⎯ ⎯ 34 ⎯ VDD ≈ 48 V, VGS = 10 V, ID = 9 A ⎯ 25 ⎯ VDD ≈ 48 V, VGS = 5 V, ID = 9 A ⎯ 13 ⎯ ⎯ 5.2 ⎯ ⎯ 4.5 ⎯ ⎯ 6.7 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz tr VGS Turn-on time ton Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW 0V 4.7 Ω Switching time ID = 4.5 A VOUT 10 V RL = 6.7Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ≈ 30 V Duty ≤ 1%, tw = 10 μs VDD ≈ 48 V, VGS = 10 V, ID = 9 A V V mΩ S pF Ω ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Peak forward current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IFP ⎯ ⎯ ⎯ 36 A ⎯ ⎯ −1.2 V VDSF IDR = 9 A, VGS = 0 V 3 2009-08-18 TPC8053-H ID – VDS 3.3 10 ID – VDS Common source Ta = 25°C Pulse test 3.2 3.4 3.5 3.8 (A) 8 20 3.4 3.5 3.6 3.8 10 16 (A) 10 3.1 ID Drain current ID Drain current 3 4 2.9 2 Common source Ta = 25°C Pulse test 4.5 4.5 6 3.3 12 3.2 8 3.1 3 4 VGS = 2.8 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS VGS = 2.8 V 0 0 1 0.8 0.4 (V) Drain-source voltage ID – VGS (V) Common source Ta = 25℃ Pulse test (V) Common source VDS = 10 V Pulse test VDS Drain-source voltage Drain current 8 VDS 2 0.4 (A) ID 12 1.6 VDS – VGS 20 16 1.2 Ta = −55°C 100 25 4 0.3 0.2 ID = 9 A 0.1 4.5 2.3 0 0 1 2 3 Gate-source voltage 4 VGS 0 5 0 2 (V) 4 Gate-source voltage Common source VDS = 10 V Pulse test 100 Ta = −55°C 10 100 25 1 0.1 0.1 1 Drain current 10 ID 8 VGS 10 (V) RDS (ON) – ID 100 Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) ⎪Yfs⎪ – ID 1000 6 Common source Ta = 25 ℃ Pulse test VGS = 4.5 V 1 0.1 100 (A) 10 10 Drain current 4 10 1 ID 100 (A) 2009-08-18 TPC8053-H RDS (ON) – Ta IDR – VDS 100 (A) Common source Pulse test 10 IDR 30 ID = 2.3, 4.5, 9 A Drain reverse current 20 ID = 2.3, 4.5, 9 A VGS = 4.5 V 10 VGS = 10 V 0 −80 −40 0 40 Ambient temperature 80 120 Ta 3 10 4.5 2 1 Common source Ta = 25°C Pulse test 0.1 0 160 −0.2 (°C) −0.4 Capacitance – VDS Vth (V) Gate threshold voltage (V) Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss 10 80 120 Drain-source voltage 1 0.5 Common source VDS = 10 V ID = 0.2 mA Pulse test 0 −80 100 VDS 1.5 0.8 0.4 Ambient temperature 120 Ta 20 VDS = 48 V (V) Drain-source voltage (2) 80 160 (°C) 16 40 1.2 40 Ta 50 VDS PD 1.6 40 Dynamic input/output characteristics (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) t=10s (1) 0 Ambient temperature (V) PD – Ta 2 −40 (°C) 12 12 24 20 24 12 10 8 Common source ID = 9 A Ta = 25°C 4 Pulse test 30 20 Total gate charge 5 VDD = 48 V 10 0 0 160 VGS 30 Qg (V) 1 2 VGS (pF) 1000 C Capacitance VDS −1.2 Vth – Ta Ciss (W) −1 −0.8 2.5 10 0.1 Drain power dissipation −0.6 Drain-source voltage 10000 0 0 VGS = 0 V 1 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) 40 0 40 (nC) 2009-08-18 TPC8053-H rth – tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 100 (1) 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 100 ID max (Pulse) * t = 1 ms * Drain current ID (A) 1000 10 10 ms * 1 0.1 * Single – pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. 0.01 0.1 VDSS max 1 Drain-source voltage 10 VDS 100 (V) 6 2009-08-18 TPC8053-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-08-18