TPCP8103-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCP8103-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Unit: mm 0.33±0.05 0.05 M A 5 0.475 • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 6.5 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −40V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) 1 4 B 0.65 0.05 M B 2.9±0.1 A 0.8±0.05 0.025 S S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 1.12 +0.13 -0.12 Absolute Maximum Ratings (Ta = 25°C) Characteristic 1. Source 2. Source 3. Source 4. Gate 0.28 +0.1 -0.11 5. Drain 6. Drain 7. Drain 8. Drain Symbol Rating Unit Drain-source voltage VDSS −40 V JEDEC ― Drain-gate voltage (RGS = 20 kΩ) VDGR −40 V JEITA ― Gate-source voltage VGSS ±20 V TOSHIBA (Note 1) ID −4.8 IDP −19.2 A Weight: 0.017 g (typ.) Pulsed (Note 1) PD 1.68 Drain current DC Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) W PD 0.84 W EAS 10.7 mJ IAR −4.8 A EAR 0.09 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) 2.8±0.1 2.4±0.1 8 Circuit Configuration 8 7 6 5 1 2 3 4 Marking (Note 5) 8 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 2-3V1K 7 6 5 8103H ※ 1 2 3 4 Lot No. 1 2009-12-10 TPCP8103-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Max Unit Rth (ch-a) 74.4 °C/W Rth (ch-a) 148.8 °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -4.8A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2009-12-10 TPCP8103-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = −40 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −40 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 20 V −20 ⎯ ⎯ Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 VGS = −4.5 V, ID = −2.4 A ⎯ 42 54 VGS = −10 V, ID = −2.4 A ⎯ 31 40 VDS = −10 V, ID = −2.4 A 5 10 ⎯ ⎯ 800 ⎯ ⎯ 115 ⎯ ⎯ 165 ⎯ ⎯ 6.5 ⎯ ⎯ 12.5 ⎯ Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-on time ton VDS = -10 V, VGS = 0 V, f = 1 MHz tf Turn-off time 4.7 Ω Switching time Fall time ID =−2.4A VOUT VGS −10 V RL =8.33Ω Drain-source breakdown voltage Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW V mΩ S pF ns ⎯ 9 ⎯ ⎯ 37 ⎯ VDD ≈ −32 V, VGS = −10 V, ID = -4.8 A ⎯ 19 ⎯ VDD ≈ −32 V, VGS = −5 V, ID = −4.8 A ⎯ 11 ⎯ ⎯ 1.5 ⎯ ⎯ 5.5 ⎯ ⎯ 6.5 ⎯ Test Condition Min Typ. Max Unit ⎯ ⎯ ⎯ −19.2 A ⎯ ⎯ 1.2 V VDD ≈ −20 V Duty ≤ 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) V VDD ≈ −32 V, VGS = −10 V, ID = −4.8 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse Symbol (Note 1) IDRP VDSF IDR = −4.8 A, VGS = 0 V 3 2009-12-10 TPCP8103-H ID – VDS Common source Ta = 25°C −8 Pulse test −6 −4 ID – VDS −20 −3.5 −8 ID −6 −2.7 −4 −2.5 −2 −2.3 −6 −4 −3.5 −8 −10 (A) −3.0 −10 Common source Ta = 25°C Pulse test −16 Drain Current Drain Current ID (A) −10 −12 VGS = −3.0 V −8 −2.7 −2.5 −4 −2.3 VGS = −2 V 0 0 −0.2 −0.4 −0.6 −0.8 Drain-source voltage VDS −2.0 0 −1 −0.4 0 (V) −0.8 Drain-source voltage ID – VGS (V) Common source Ta = 25°C Pulse test −0.8 VDS (V) Common source VDS = −10 V Pulse test −6 Drain-source voltage (A) ID Drain Current VDS −2 VDS – VGS −4 100 −2 Ta = −55°C 25 0 0 −1 −2 −3 −4 Gate-source voltage VGS −0.6 −0.4 ID = −4.8A −0.2 −2.4 −1.2 0 0 −5 −2 −4 (V) |Yfs| – ID Ta = −55°C 10 25 100 1 −1 Drain Current −8 VGS −10 (V) RDS (ON) – ID 1000 Common source VDS = −10 V Pulse test 0.1 −0.1 −6 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) 100 Forward transfer admittance |Yfs| (S) −1.6 −1 −10 −8 −1.2 −10 ID Common source Ta = 25°C Pulse test 100 VGS = −4.5V −10 10 1 −0.1 −100 −1 Drain Current (A) 4 −10 ID −100 (A) 2009-12-10 TPCP8103-H RDS (ON) – Ta IDR – VDS −100 100 Common source (A) Common source Ta = 25°C Pulse test IDR 80 ID = −1.2, −2.4, −4.8 A 60 Drain reverse current VGS = −4.5V 40 ID = −1.2, −2.4, −4.8 A 20 VGS = −10V 0 −80 −40 0 40 Ambient temperature 80 120 Ta −3 −10 0 0.2 (°C) 0.4 Vth (V) Gate threshold voltage Coss 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C (V) −1 −10 80 120 VDS −1.2 −0.8 Common source −0.4 VDS = −10 V ID = −1 mA Pulse test 0 −80 −100 (V) −40 0 40 Ambient temperature Ta −50 Device mounted on a glass-epoxy board (a) (Note 2a) ② Device mounted on a glass-epoxy board (b) (Note 2b) t = 5s −20 Common source ID = − 4.8 A Ta = 25°C −16 Pulse test Drain-source voltage ② 0.5 40 80 Ambient temperature 120 Ta −40 VDS (V) ① 1.5 (°C) Dynamic input/output characteristics 2 ① 160 VDD = −32 V −30 −16 −8 5 VDD = −32 V −8 −8 VGS −10 5 10 Total gate charge (°C) −12 −16 −20 0 0 160 VDS −4 15 Qg 20 25 (V) −0.1 −2.6 PD – Ta (W) VDS 1.2 VGS Capacitance C (pF) Ciss 1000 Drain-source voltage PD 1 −2 10 −0.01 Drain power dissipation 0.8 Vth – Ta Capacitance – VDS 0 0 0.6 Drain-source voltage 10000 1 VGS = 1V −1 −1 0 160 −5 −10 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) Pulse test 0 (nC) 2009-12-10 TPCP8103-H rth – tw Transient thermal impedance rth (°C/W) 1000 ① Device mounted on a glass-epoxy board (a) (Note 2a) ② Device mounted on a glass-epoxy board (b) (Note 2b) 100 ② ① 10 1 Single-pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area −100 Drain Current ID (A) ID max (Pulse)※ t =1 ms※ −10 10 ms※ −1 ※ : Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1 Drain-source voltage VDSS MAX. −10 VDS −100 (V) 6 2009-12-10 TPCP8103-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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