TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A03-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Built-in schottky barrier diode Low forward voltage: VDSF = −0.6 V (max) • High-speed switching • Small gate charge: QSW = 8.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 4.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 54 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 17 Pulsed (Note 1) IDP 68 Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 188 mJ Avalanche current IAR 17 A EAR 0.108 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Repetitive avalanche energy (Tc = 25℃) (Note 4) A JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1B Weight: 0.085g (typ.) Circuit Configuration Note: For Notes 1 to 4, refer to the next page. 8 7 6 5 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-01-19 TPC8A03-H Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) TPC8A03 H Part No. (or abbreviation code) Lot No. Note 6 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 17 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 6: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-01-19 TPC8A03-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.3 VGS = 4.5 V, ID = 8.5 A ⎯ 5.1 7.0 VGS = 10 V, ID = 8.5 A ⎯ 4.1 5.6 VDS = 10 V, ID = 8.5 A 27 54 ⎯ ⎯ 2640 3430 ⎯ 100 150 ⎯ 610 ⎯ ⎯ 1.0 1.5 ⎯ 3.6 ⎯ ⎯ 11.0 ⎯ ⎯ 7.2 ⎯ ⎯ 42 ⎯ VDD ≈ 24 V, VGS = 10 V, ID = 17 A ⎯ 36 ⎯ VDD ≈ 24 V, VGS = 5 V, ID = 17 A ⎯ 19 ⎯ ⎯ 7.6 ⎯ ⎯ 5.0 ⎯ ⎯ 8.4 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz tr VGS Turn-on time ton Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW 0V 4.7 Ω Switching time ID = 8.5 A VOUT 10 V RL = 1.76Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs VDD ≈ 24 V, VGS = 10 V, ID = 17 A V V mΩ S pF Ω ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 68 A IDR = 1 A, VGS = 0 V ⎯ − 0.4 − 0.6 V IDR = 17 A, VGS = 0 V ⎯ ⎯ − 1.2 V VDSF 3 2010-01-19 TPC8A03-H ID – VDS 5 4.5 20 8 4 3.0 10 16 4 3.2 3.1 Common source Ta = 25°C Pulse test 40 ID (A) 2.9 (A) 12 2.8 Drain current ID Drain current ID – VDS 10 8 5 4.5 50 Common source Ta = 25°C Pulse test 8 2.7 4 3.0 30 2.9 20 2.8 10 VGS = 2.5 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 1.0 VGS = 2.6 V 0 1 (V) 2 Drain-source voltage ID – VGS VDS 18 100 12 Ta = −55°C 25 0 1 2 3 Gate-source voltage 4 VGS 0.15 0.10 ID = 17 A 0.05 8.5 4.3 0 0 5 2 (V) 4 6 Gate-source voltage ⎪Yfs⎪ − ID 8 VGS 10 (V) RDS (ON) − ID 1000 10 Drain-source ON-resistance RDS (ON) (mΩ) Common source VDS = 10 V Pulse test (S) (V) Common source Ta = 25°C Pulse test (V) Common source VDS = 10 V Pulse test 24 0 |Yfs| VDS 5 VDS – VGS 6 100 Ta = −55°C Forward transfer admittance 4 0.20 Drain-source voltage Drain current ID (A) 30 3 25 100 10 1 4.5 VGS = 10 V Common source Ta = 25°C Pulse test 0.1 0.1 1 Drain current 10 ID 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2010-01-19 TPC8A03-H RDS (ON) − Ta IDR − VDS 100 4.5 (A) Common source Pulse test ID = 4.3 A,8.5 A,17 A 6 VGS = 4.5 V ID = 4.3 A,8.5 A,17 A 3 VGS = 10 V 0 −80 10 IDR 9 Drain reverse current 3 1 10 Common source Ta = 25°C Pulse test 1 −40 0 40 Ambient temperature 80 120 Ta VGS = 0 V 160 −0.2 0 (°C) −0.4 Drain-source voltage Capacitance − VDS Vth (V) (pF) Gate threshold voltage Coss Crss 100 10 0.1 1 10 Drain-source voltage 120 1.0 0.5 0 −80 100 VDS 1.5 Common source VDS = 10 V ID = 1 mA Pulse test −40 (V) 50 80 120 Ta (V) 20 16 VDS 0.5 Ambient temperature (°C) Common source ID = 17 A Ta = 25°C Pulse test 40 (2) 40 Ta 160 Dynamic input/output characteristics Drain-source voltage 1.5 40 Ambient temperature (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) 0 VGS 2.0 (W) 80 2.0 PD – Ta PD (V) 30 (°C) 12 VDS VDD = 6 V 20 24V 8 4 10 20 Total gate charge 5 12V 10 0 0 160 (V) C Capacitance 1000 Common source VGS = 0 V f = 1 MHz Ta = 25°C Drain power dissipation VDS −1.0 2.5 Ciss 0 0 −0.8 Vth − Ta 10000 1.0 −0.6 30 Qg 40 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) 12 0 50 (nC) 2010-01-19 TPC8A03-H rth – tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 100 (1) 10 1 0.1 Single Pulse 0.01 0.0001 0.001 0.1 0.01 Pulse width 1 tw 10 100 1000 (s) Safe operating area 100 ID max (Pulse) * t =1 ms * Drain current ID (A) 1000 10 ms * 10 1 *Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 1 Drain-source voltage 10 VDS 100 (V) 6 2010-01-19 TPC8A03-H IDSS – Tch IDR – VDSF 100000 IDSS Drain cutoff current Drain reverse current 100 10 75 Ta = 25°C 1 0 −0.2 −0.4 −0.6 Drain-source voltage −0.8 VDSF (V) Pulse test 10 20 10000 VDS = 30 V 5 1000 100 10 0 −1 (typ.) VGS = 0 V (μA) Pulse test VGS = 0 V IDR (A) 100 40 80 Channel temperature 120 Tch 160 (°C) Tch – VDS Channel temperature Tch (°C) 160 Pulse test VGS = 0 V 140 120 100 80 60 40 20 0 0 10 20 Drain-source voltage 30 VDS 40 (V) 7 2010-01-19 TPC8A03-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2010-01-19