TOSHIBA TPC8A03-H

TPC8A03-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (U-MOS V-H)
TPC8A03-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
•
Unit: mm
Built-in schottky barrier diode
Low forward voltage: VDSF = −0.6 V (max)
•
High-speed switching
•
Small gate charge: QSW = 8.4 nC (typ.)
•
Low drain-source ON-resistance: RDS (ON) = 4.1 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 54 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
•
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
17
Pulsed (Note 1)
IDP
68
Drain power dissipation
(t = 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation
(t = 10 s)
(Note 2b)
PD
1.0
W
Single-pulse avalanche energy
(Note 3)
EAS
188
mJ
Avalanche current
IAR
17
A
EAR
0.108
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
A
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.085g (typ.)
Circuit Configuration
Note: For Notes 1 to 4, refer to the next page.
8
7
6
5
1
2
3
4
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8A03-H
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Rth (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
125
°C/W
Marking (Note 5)
TPC8A03
H
Part No. (or abbreviation code)
Lot No.
Note 6
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 17 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Note 6: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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TPC8A03-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯
±100
nA
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
VDS = 10 V, ID = 1 mA
1.3
⎯
2.3
VGS = 4.5 V, ID = 8.5 A
⎯
5.1
7.0
VGS = 10 V, ID = 8.5 A
⎯
4.1
5.6
VDS = 10 V, ID = 8.5 A
27
54
⎯
⎯
2640
3430
⎯
100
150
⎯
610
⎯
⎯
1.0
1.5
⎯
3.6
⎯
⎯
11.0
⎯
⎯
7.2
⎯
⎯
42
⎯
VDD ≈ 24 V, VGS = 10 V, ID = 17 A
⎯
36
⎯
VDD ≈ 24 V, VGS = 5 V, ID = 17 A
⎯
19
⎯
⎯
7.6
⎯
⎯
5.0
⎯
⎯
8.4
⎯
Drain-source breakdown voltage
Gate threshold voltage
Vth
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Gate resistance
rg
VDS = 10 V, VGS = 0 V, f = 5 MHz
tr
VGS
Turn-on time
ton
Fall time
tf
Turn-off time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge 1
Qgs1
Gate-drain (“Miller”) charge
Qgd
Gate switch charge
QSW
0V
4.7 Ω
Switching time
ID = 8.5 A
VOUT
10 V
RL = 1.76Ω
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD ≈ 15 V
Duty ≤ 1%, tw = 10 μs
VDD ≈ 24 V, VGS = 10 V, ID = 17 A
V
V
mΩ
S
pF
Ω
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
68
A
IDR = 1 A, VGS = 0 V
⎯
− 0.4
− 0.6
V
IDR = 17 A, VGS = 0 V
⎯
⎯
− 1.2
V
VDSF
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ID – VDS
5 4.5
20
8
4
3.0
10
16
4
3.2
3.1
Common source
Ta = 25°C
Pulse test
40
ID
(A)
2.9
(A)
12
2.8
Drain current
ID
Drain current
ID – VDS
10 8 5 4.5
50
Common source
Ta = 25°C
Pulse test
8
2.7
4
3.0
30
2.9
20
2.8
10
VGS = 2.5 V
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
0
1.0
VGS = 2.6 V
0
1
(V)
2
Drain-source voltage
ID – VGS
VDS
18
100
12
Ta = −55°C
25
0
1
2
3
Gate-source voltage
4
VGS
0.15
0.10
ID = 17 A
0.05
8.5
4.3
0
0
5
2
(V)
4
6
Gate-source voltage
⎪Yfs⎪ − ID
8
VGS
10
(V)
RDS (ON) − ID
1000
10
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
VDS = 10 V
Pulse test
(S)
(V)
Common source
Ta = 25°C
Pulse test
(V)
Common source
VDS = 10 V
Pulse test
24
0
|Yfs|
VDS
5
VDS – VGS
6
100
Ta = −55°C
Forward transfer admittance
4
0.20
Drain-source voltage
Drain current
ID
(A)
30
3
25
100
10
1
4.5
VGS = 10 V
Common source
Ta = 25°C
Pulse test
0.1
0.1
1
Drain current
10
ID
1
0.1
100
(A)
1
Drain current
4
10
ID
100
(A)
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TPC8A03-H
RDS (ON) − Ta
IDR − VDS
100
4.5
(A)
Common source
Pulse test
ID = 4.3 A,8.5 A,17 A
6
VGS = 4.5 V
ID = 4.3 A,8.5 A,17 A
3
VGS = 10 V
0
−80
10
IDR
9
Drain reverse current
3
1
10
Common source
Ta = 25°C
Pulse test
1
−40
0
40
Ambient temperature
80
120
Ta
VGS = 0 V
160
−0.2
0
(°C)
−0.4
Drain-source voltage
Capacitance − VDS
Vth (V)
(pF)
Gate threshold voltage
Coss
Crss
100
10
0.1
1
10
Drain-source voltage
120
1.0
0.5
0
−80
100
VDS
1.5
Common source
VDS = 10 V
ID = 1 mA
Pulse test
−40
(V)
50
80
120
Ta
(V)
20
16
VDS
0.5
Ambient temperature
(°C)
Common source
ID = 17 A
Ta = 25°C
Pulse test
40
(2)
40
Ta
160
Dynamic input/output
characteristics
Drain-source voltage
1.5
40
Ambient temperature
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10 s
(1)
0
VGS
2.0
(W)
80
2.0
PD – Ta
PD
(V)
30
(°C)
12
VDS
VDD = 6 V
20
24V
8
4
10
20
Total gate charge
5
12V
10
0
0
160
(V)
C
Capacitance
1000
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Drain power dissipation
VDS
−1.0
2.5
Ciss
0
0
−0.8
Vth − Ta
10000
1.0
−0.6
30
Qg
40
Gate-source voltage
Drain-source ON-resistance
RDS (ON) (mΩ)
12
0
50
(nC)
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TPC8A03-H
rth – tw
Transient thermal impedance
rth (°C/W)
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
100
(1)
10
1
0.1
Single Pulse
0.01
0.0001
0.001
0.1
0.01
Pulse width
1
tw
10
100
1000
(s)
Safe operating area
100
ID max (Pulse) *
t =1 ms *
Drain current
ID
(A)
1000
10 ms *
10
1
*Single-pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
VDSS max
1
Drain-source voltage
10
VDS
100
(V)
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IDSS – Tch
IDR – VDSF
100000
IDSS
Drain cutoff current
Drain reverse current
100
10
75
Ta = 25°C
1
0
−0.2
−0.4
−0.6
Drain-source voltage
−0.8
VDSF
(V)
Pulse test
10
20
10000
VDS = 30 V
5
1000
100
10
0
−1
(typ.)
VGS = 0 V
(μA)
Pulse test
VGS = 0 V
IDR
(A)
100
40
80
Channel temperature
120
Tch
160
(°C)
Tch – VDS
Channel temperature
Tch
(°C)
160
Pulse test
VGS = 0 V
140
120
100
80
60
40
20
0
0
10
20
Drain-source voltage
30
VDS
40
(V)
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TPC8A03-H
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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